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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY62147GN30-45ZSXI

Name: CY62147GN30-45ZSXI
Brand: Infineon Technologies
SKU: CY62147GN30-45ZSXI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY62147GN30-45ZSXI

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 44-TSOP (0.400", 10.16mm Width)

Datasheet:: CY62147GN30-45ZSXI.pdf

Description:: IC SRAM 4MBIT PARALLEL 44TSOP II

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Product details

Overview

CY62147GN30-45ZSXI from Cypress Semiconductor is a 4-Mbit MoBL® SRAM organized as 256K × 16-bit, operating at 45 ns access time with 2.2 V–3.6 V supply, ultra-low standby current (3.5 µA typical), TTL-compatible I/Os, and dual chip enable (CE1/CE2) logic for industrial memory subsystems in portable instrumentation and low-power microcontroller interfaces.

For engineers reviewing the CY62147GN30-45ZSXI datasheet, CY62147GN30-45ZSXI pinout, CY62147GN30-45ZSXI application, or CY62147GN30-45ZSXI equivalent, this device supports byte-selectable writes via BHE/ BLE, automatic power-down on disabled byte enables, and operates across three voltage ranges - critical for battery-backed data logging, FPGA configuration storage, and embedded controller cache expansion.

Technical Context

This SRAM implements a synchronous CMOS architecture with independent byte write control through dedicated BHE (I/O8–I/O15) and BLE (I/O0–I/O7) inputs, enabling partial-word updates without read-modify-write cycles. Its dual CE interface (CE1 LOW + CE2 HIGH) provides precise bank selection in multi-device memory maps.

The device features automatic standby entry when both BHE and BLE are deasserted - independent of CE state - reducing quiescent current to ≤8.7 µA at 85°C. Data retention is maintained down to 1.0 V, supporting brown-out resilience in systems with backup power switching.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	4 Mbit (256K words × 16 bits) - supports 32 KB of parallel-access data storage
Access Time	45 ns - enables direct interfacing with 22.22 MHz bus clocks without wait states
V_CC Range	2.2 V–3.6 V - compatible with 2.5 V and 3.3 V system rails, including mixed-voltage SoC interfaces
Standby Current	3.5 µA typical / 8.7 µA max at 85°C - meets stringent energy budgets for always-on sensor nodes
I/O Interface	TTL-compatible inputs/outputs - eliminates level-shifter requirements in legacy microcontroller designs
Data Retention	1.0 V minimum - sustains memory contents during power-fail transitions with capacitor hold-up
Package	48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) - enables high-density PCB layouts in space-constrained modules

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, JEDEC MO-255 compliant, thermal resistance θ_JA = 31.35 °C/W (4-layer board).

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit address bus supporting full 256K-word addressing; no internal latching
I/O0–I/O7	Data Bus (Lower Byte)	Bi-directional 8-bit data path controlled by BLE; HI-Z when BLE inactive
I/O8–I/O15	Data Bus (Upper Byte)	Bi-directional 8-bit data path controlled by BHE; HI-Z when BHE inactive
CE1, CE2	Dual Chip Enable	Active-Low CE1 and Active-High CE2 required simultaneously for device selection
WE	Write Enable	Active-Low signal initiating write cycle; sampled synchronously with address setup
OE	Output Enable	Active-Low control for output drivers; does not affect internal array timing
BLE, BHE	Byte Write Enables	Independent controls for lower/upper byte writes; both deasserted triggers auto-standby
VCC, VSS	Power Supply	Single-supply operation; separate VSS pins reduce ground bounce in high-speed access

Key Features

Feature	Design Value
Byte Power Down	Automatic transition to standby mode when both BHE and BLE are deasserted - eliminates external power management logic
Dual Chip Enable Logic	CE1 (active-low) and CE2 (active-high) provide deterministic chip select timing in multi-SRAM systems
Multi-Voltage Operation	Supports 2.2–3.6 V range with guaranteed 45 ns timing - simplifies migration from 2.5 V to 3.3 V platforms
1.0 V Data Retention	Maintains stored data during brown-out events down to 1.0 V - enables seamless backup to supercapacitor or coin cell
TTL-Compatible I/O	Direct connection to legacy microcontrollers (e.g., 8051, PIC18) without level translation circuitry

Applications

Portable Medical Sensors

Industrial PLC Data Buffers

Use Scenario: Continuous acquisition of ECG waveforms in handheld diagnostic devices with intermittent wireless upload.

IC Role / Device Role / Timing Role: High-reliability, low-power SRAM storing real-time waveform samples between transmission bursts.

Use Value: 3.5 µA standby current extends battery life >6 months; 45 ns access enables real-time buffering at 20 kSPS sampling rates.

Use Scenario: Local history logging in modular I/O controllers handling analog sensor inputs and digital actuator commands.

IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding last-known state during firmware updates or power cycling.

Use Value: 1.0 V data retention preserves critical process values during 100 ms power interruptions; dual CE allows isolation from main CPU bus.

FPGA Configuration Storage

Automotive Body Control Modules

Use Scenario: Storing partial reconfiguration bitstreams for Xilinx Spartan-6 FPGAs in adaptive lighting systems.

IC Role / Device Role / Timing Role: Fast-access parallel memory mapped to FPGA's slave select interface for dynamic logic swapping.

Use Value: 45 ns access time matches FPGA's 22 MHz configuration clock; TTL compatibility avoids level shifters on CONFIG bus.

Use Scenario: Real-time parameter storage in door module ECUs managing window position, mirror angle, and seat memory.

IC Role / Device Role / Timing Role: Dual-port accessible SRAM serving as scratchpad for CAN message filtering and EEPROM wear-leveling buffers.

Use Value: Independent BHE/ BLE enables concurrent update of left/right mirror settings without bus contention; VFBGA footprint fits tight under-dash space constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV25616AL-10TLI	10 ns faster (35 ns), 3.3 V only, no byte power-down feature, 44-pin TSOP II package	Higher speed but lacks auto-standby; requires external power gating for µA-level sleep	Select when maximum throughput is prioritized over ultra-low quiescent power
AS6C4008-55ZIN	55 ns access, 2.7–3.6 V range, 48-ball VFBGA, no dual CE, single CE input only	Simpler control interface but no CE1/CE2 bank selection; higher standby current (15 µA typical)	Select for cost-sensitive designs where dual CE is unnecessary and 55 ns timing suffices

Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, CY62147GN30-45ZSXI uniquely combines 45 ns speed, dual CE flexibility, and sub-µA standby via byte-enable-triggered auto-sleep - making it optimal for battery-powered systems requiring both performance and energy efficiency.

Availability

CY62147GN30-45ZSXI is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, and FPGA configuration storage requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY62147GN30-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, automotive, and industrial applications.

CY62147GN belongs to the MoBL® (Mobile Low-power) SRAM product line, engineered specifically for portable and battery-operated equipment requiring fast access, multi-voltage support, and nanowatt standby consumption.

FAQ

What is the minimum V_CC required to retain data in CY62147GN30-45ZSXI?

Data retention is guaranteed down to 1.0 V, meaning the device maintains stored contents even when V_CC drops to this level - critical for systems using capacitor-based backup during power loss. This specification is validated across the full industrial temperature range (–40°C to +85°C) and does not require active refresh or external circuitry.

Does CY62147GN30-45ZSXI support true dual-byte write operations?

Yes - the device supports independent upper- and lower-byte writes via dedicated BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls. When only one byte enable is asserted, the other byte remains undisturbed; both can be asserted simultaneously for full 16-bit writes. This eliminates read-modify-write overhead in partial-word update scenarios.

How does the dual chip enable (CE1/CE2) logic differ from single CE SRAMs?

CY62147GN30-45ZSXI requires CE1 LOW *and* CE2 HIGH to activate - unlike single-CE parts that respond to one active-low signal. This two-signal requirement prevents accidental activation during power-up transients and enables deterministic bank selection in multi-SRAM configurations without additional decode logic.

Is the 48-ball VFBGA package RoHS-compliant and lead-free?

Yes - the CY62147GN30-45ZSXI uses a Pb-free 48-ball VFBGA package compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3). The package employs SnAgCu solder finish and meets IPC/JEDEC J-STD-033 handling requirements for surface-mount assembly.

CY62147GN30-45ZSXI Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: MOBL™

Package/Case:: 44-TSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 4Mbit

Memory Organization:: 256K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 45ns

Access Time:: 45 ns

Voltage - Supply:: 2.2V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 44-TSOP II

CY62147GN30-45ZSXI FAQ

1.How can I place an order for CY62147GN30-45ZSXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62147GN30-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62147GN30-45ZSXI reliable?

The price and inventory of CY62147GN30-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147GN30-45ZSXI is usually 5 days.

3.What payment methods are accepted for CY62147GN30-45ZSXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147GN30-45ZSXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62147GN30-45ZSXI?

CY62147GN30-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62147GN30-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62147GN30-45ZSXI?

For technical support, including CY62147GN30-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147GN30-45ZSXI requirements.

6.How does Aetrix verify that CY62147GN30-45ZSXI is sourced from the original manufacturer or authorized distributors?

All CY62147GN30-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147GN30-45ZSXI meets industry standards.

7.What is the process for return or replacement of CY62147GN30-45ZSXI?

All CY62147GN30-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62147GN30-45ZSXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62147GN30-45ZSXI part is unused and in its original packaging.

Return procedure for CY62147GN30-45ZSXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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