Infineon Technologies CY62147GN30-45ZSXIT

Overview

CY62147GN30-45ZSXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® low-power CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (3.5 µA typical). It supports dual chip enable (CE1/CE2), byte-level write control via BHE/BLE, and operates across industrial temperature (–40 °C to +85 °C) in a 48-ball VFBGA package. Used in portable embedded systems requiring fast, low-power memory with byte-selective writes.

For engineers reviewing the CY62147GN30-45ZSXIT datasheet, CY62147GN30-45ZSXIT pinout, CY62147GN30-45ZSXIT application, or CY62147GN30-45ZSXIT equivalent, this page delivers verified specifications, validated pin functions, real-world use cases, and confirmed alternative parts for memory subsystem design and BOM optimization.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array with independent high-byte (I/O8–I/O15/BHE) and low-byte (I/O0–I/O7/BLE) write enable paths, enabling partial-word updates without read-modify-write cycles. Its dual CE architecture allows hierarchical memory banking-CE1 active-low and CE2 active-high-supporting multi-device decode logic in compact PCB layouts.

The device features automatic Byte Power Down: when both BHE and BLE are deasserted, it enters standby mode regardless of CE state, reducing ISB2 to 3.5 µA at 25 °C. Data retention is guaranteed down to 1.0 V, supporting graceful power-fail operation in battery-backed systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), JEDEC MO-220, 6 mm × 8 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Compared with IS62WV25616BLL-45NLI and R1LV25616AS-45SI, CY62147GN30-45ZSXIT uniquely delivers automatic Byte Power Down and 1.0 V data retention-critical for battery-constrained, fail-safe embedded systems where power sequencing and data integrity are co-dependent design requirements.

Availability

CY62147GN30-45ZSXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC HMIs, automotive ADAS camera modules, and smart energy meters requiring stable component supply across extended product lifecycles.

Supply support for CY62147GN30-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and IoT applications, with emphasis on low-power innovation and long-term supply assurance.

CY62147GN30-45ZSXIT belongs to the MoBL® (Mobile Bit-Low-power) SRAM product line, engineered specifically for battery-powered and thermally constrained embedded systems needing fast, deterministic memory access with minimal quiescent power draw.

FAQ

What is the minimum VCC required for reliable data retention in CY62147GN30-45ZSXIT?

The device guarantees data retention down to 1.0 V, as specified in the Data Retention Characteristics section (page 9 of Rev. *D datasheet). This applies across the full industrial temperature range (–40 °C to +85 °C) and does not require active refresh or external biasing-only stable 1.0 V supply on VCC and VSS pins.

Can CY62147GN30-45ZSXIT operate with only CE1 asserted and CE2 floating?

No. For dual CE operation, CE2 must be actively driven HIGH (≥ VCC – 0.2 V) to enable access. Floating CE2 violates the DC Electrical Characteristics requirement for ISB1/ISB2 compliance and may cause undefined behavior or increased leakage. CE2 must be tied to a valid logic HIGH level.

Does the 45 ns access time apply across the entire 2.2–3.6 V range?

Yes. The 45 ns access time is guaranteed over the full 2.2 V to 3.6 V VCC range and at temperatures from –40 °C to +85 °C, as confirmed in the AC Switching Characteristics table (page 10) and Product Portfolio summary (page 2) of the datasheet.

Are the NC pins on the 48-ball VFBGA electrically isolated or internally bonded?

The NC (No Connect) pins-specifically Balls C1, D2, and E2 per Figure 1-are not connected to the silicon die and serve only as mechanical placeholders for future higher-density pinouts. They must remain unconnected on PCBs and should not be tied to VCC, VSS, or signals.