Infineon Technologies CY62148BLL-70ZI

Overview

CY62148BLL-70ZI from Cypress Semiconductor is a 4-Mbit (512K × 8) CMOS static RAM with 70 ns access time, 4.5–5.5 V supply operation, and automatic CE-controlled power-down. It features TTL-compatible I/O, three-state drivers, and is packaged in a 32-pin TSOP II for industrial temperature range (–40°C to +85°C) applications including embedded controllers and data logging systems.

For engineers reviewing the CY62148BLL-70ZI datasheet, CY62148BLL-70ZI pinout, CY62148BLL-70ZI application, or CY62148BLL-70ZI equivalent, key selection criteria include standby current (4 µA typical), read cycle time (70 ns), CE/OE/WE control logic, industrial-grade thermal performance, and SOIC/TSOP II package compatibility in memory expansion designs.

Technical Context

The CY62148BLL-70ZI implements a full CMOS SRAM architecture with independent address decoding (A0–A18), bidirectional 8-bit I/O bus (I/O0–I/O7), and dual active-Low control: Chip Enable (CE) for device selection and Output Enable (OE) for output gating. Write operations require simultaneous CE and WE LOW, while reads require CE and OE LOW with WE HIGH.

Its automatic power-down mode activates when CE is HIGH, reducing ICC to ≤4 µA (typical) - a >99% reduction versus active current (12.5 mA at f_max). All inputs meet TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), and outputs drive ±2.1 mA loads with VOH ≥ 2.4 V and VOL ≤ 0.4 V at VCC = 4.5 V.

Key Specifications

Pinout & Package

Package: 32-pin TSOP II (Thin Small Outline Package, Type II), 8.0 mm × 13.4 mm body, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV5128AL-70TQLI and AS6C4008-70PIN, the CY62148BLL-70ZI uniquely balances 5 V compatibility, industrial temperature support, TSOP II form factor, and sub-5 µA standby - making it optimal for retrofitting legacy 5 V industrial systems requiring compact, thermally robust memory.

Availability

CY62148BLL-70ZI is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive body control modules, and medical device parameter storage requiring stable component supply across extended product lifecycles.

Supply support for CY62148BLL-70ZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable logic solutions for industrial and automotive markets.

The CY62148B MoBL™ (Move Beyond Logic) SRAM product line was designed specifically for low-power, high-reliability embedded systems requiring fast, byte-accessible memory with minimal external support circuitry.

FAQ

What is the minimum VCC required for data retention on CY62148BLL-70ZI?

The device guarantees data retention down to VCC = 2.0 V (VDR), with typical retention current of 20 µA at VCC = 3.0 V and CE held above VCC – 0.3 V. This enables use with coin-cell backup supplies or brownout recovery circuits that maintain voltage above 2.0 V during power loss.

Does CY62148BLL-70ZI require an external clock signal?

No - it is a static RAM and operates asynchronously. All timing is controlled by CE, OE, and WE signal edges; no clock input or timing generator is needed. The 70 ns access time refers to maximum propagation delay from address/control setup to valid data output.

Can CY62148BLL-70ZI be used in a 3.3 V system?

No - its absolute minimum VCC is 4.5 V, and operation below this violates electrical specifications. Attempting 3.3 V operation will result in undefined behavior, failed writes, or excessive standby current. For 3.3 V systems, consider IS61LV5128AL-70TQLI instead.

How does the automatic power-down feature interact with OE and WE during standby?

Power-down is triggered solely by CE HIGH - OE and WE states are irrelevant to standby current reduction. When CE is HIGH, ICC drops to ≤4 µA regardless of OE/WE logic levels; outputs remain in high-impedance, and internal array biasing is disabled to minimize leakage.