Infineon Technologies CY62148ELL-45ZSXAT

Overview

CY62148ELL-45ZSXAT from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) high-speed CMOS static RAM with 45 ns access time, 4.5–5.5 V supply range, and ultra-low standby current (2.5 µA typical). It features automatic CE-controlled power-down, TTL-compatible I/O, and is designed for battery-sensitive portable systems requiring fast, reliable non-volatile data buffering.

For engineers reviewing the CY62148ELL-45ZSXAT datasheet, CY62148ELL-45ZSXAT pinout, CY62148ELL-45ZSXAT application, or CY62148ELL-45ZSXAT equivalent, key selection criteria include industrial-grade 45 ns timing, TSOP II 32-pin package compatibility, MoBL® low-power architecture, and CE/OE/WE control logic for seamless microcontroller interfacing.

Technical Context

The device implements a full CMOS 512K × 8 SRAM array with independent address decoding, sense amplifiers, and input/output buffers. Its automatic power-down mode activates when CE is HIGH, reducing ICC to ≤7 µA while maintaining data retention at ≥2.0 V.

Timing is governed by strict AC parameters: tRC = 45 ns, tAA = 45 ns, tDOE = 22 ns, and tHZOE = 18 ns - all guaranteed over –40 °C to +85 °C with VCC = 4.5–5.5 V. Input thresholds (VIH = 2.2 V min, VIL = 0.8 V max) ensure robust TTL-level interfacing without level-shifting.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP II), 12 × 20 mm body, 0.5 mm pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV5128AL-10TLI and CY62148EV-45ZSXI, the CY62148ELL-45ZSXAT uniquely balances 5 V tolerance, industrial temperature rating, and ultra-low 2.5 µA standby-making it optimal for cost-sensitive, battery-backed 5 V embedded systems where voltage flexibility and longevity outweigh raw speed or extreme-temperature needs.

Availability

CY62148ELL-45ZSXAT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, automotive infotainment displays, and smart energy meters requiring stable component supply across long production lifecycles.

Supply support for CY62148ELL-45ZSXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.

This device belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability data buffering in portable and battery-constrained systems.

FAQ

Is CY62148ELL-45ZSXAT compatible with 5 V TTL microcontrollers without level shifting?

Yes. The device features TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive capability (VOH ≥ 2.4 V at –1 mA, VOL ≤ 0.4 V at 2.1 mA), enabling direct connection to legacy 5 V MCUs such as the 8051, PIC18F, and AVR Mega series without external translators.

What is the minimum VCC required to retain data during power-down?

Data retention is guaranteed down to VCC = 2.0 V, with ICCDR ≤ 8.8 µA (max) at that voltage. This allows integration with supercapacitor or coin-cell backup circuits providing >100 ms hold-up time without additional retention controllers or EEPROM emulation.

Does the TSOP II package support reflow soldering per JEDEC J-STD-020?

Yes. The CY62148ELL-45ZSXAT in TSOP II package is qualified for lead-free reflow per JEDEC J-STD-020D, with peak temperature up to 260 °C and 60-second duration above 217 °C. Thermal resistance θJA = 59.1 °C/W requires adequate copper pour and thermal vias for sustained 45 ns operation at +85 °C.

Can CE be used as the sole power-management signal without toggling OE or WE?

Yes. Driving CE HIGH alone places the device into automatic power-down mode, reducing ICC to ≤7 µA and forcing I/O pins into high-impedance state-no additional control signals or sequencing required. OE and WE may float or remain static during standby, simplifying firmware power-state handling.