Infineon Technologies CY62148ELL-55SXAT

Overview

CY62148ELL-55SXAT from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) CMOS static RAM with 45 ns access time, 4.5–5.5 V supply range, and ultra-low standby current (2.5 µA typical). It features automatic CE-controlled power-down, TTL-compatible I/O, and is designed for battery-powered portable systems requiring reliable non-volatile data retention during sleep modes.

For engineers reviewing the CY62148ELL-55SXAT datasheet, CY62148ELL-55SXAT pinout, CY62148ELL-55SXAT application, or CY62148ELL-55SXAT equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), TSOP II 32-pin package compatibility, MoBL® low-power architecture, and strict CE/OE/WE timing compliance for embedded microcontroller memory expansion.

Technical Context

The CY62148ELL-55SXAT implements a fully static 512K × 8 memory array with complementary metal oxide semiconductor (CMOS) process technology, enabling zero-refresh operation and deterministic read/write timing. Its logic block includes row/column decoders, sense amplifiers, and input/output buffers optimized for TTL-level interfacing.

Power management is handled via dual-stage control: CE HIGH forces automatic power-down (ISB2 ≤ 7 µA), while active cycles use CMOS-level WE/OE gating to isolate I/O pins in high-Z state during deselect or write. Address pins A0–A18 directly map to 512K locations without multiplexing.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP II), 12 × 20 mm body, 0.5 mm lead pitch, JEDEC MO-143 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS62WV5128BLL-45NLI and CY62148EV-55ZXC, the CY62148ELL-55SXAT uniquely balances 5 V TTL compatibility, 45 ns performance, and industrial-grade low-power operation-making it optimal for cost-sensitive, battery-constrained 5 V embedded systems where voltage translation or derated timing is unacceptable.

Availability

CY62148ELL-55SXAT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data logging, automotive body control modules, and smart meter firmware caching requiring stable component supply across long-lifecycle deployments.

Supply support for CY62148ELL-55SXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for industrial, automotive, and IoT markets.

This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power memory applications in portable and energy-constrained embedded systems.

FAQ

Is CY62148ELL-55SXAT compatible with 3.3 V microcontrollers?

No. The CY62148ELL-55SXAT operates strictly at 4.5–5.5 V and features TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V). Direct interface with 3.3 V logic requires level-shifting circuitry; for native 3.3 V operation, consider Infineon's IS62WV5128BLL series instead.

What is the maximum clock frequency supported for burst reads?

The device has no internal clock-it is asynchronous. Maximum effective bus frequency depends on total read cycle time (tRC = 45 ns), allowing up to ~22.2 MHz sustained read throughput when interfaced with controllers supporting tight CE/OE timing margins and no wait states.

Does this SRAM require refresh circuitry?

No. As a static RAM, the CY62148ELL-55SXAT retains data indefinitely as long as power is applied and CE remains LOW during access. No external refresh controller, timer, or periodic access is needed-unlike DRAM or pseudo-SRAM devices.

Can I leave address or control pins floating during standby?

No. During standby (CE HIGH), all inputs except CE must be held at valid CMOS logic levels (VIH ≥ 2.2 V or VIL ≤ 0.8 V) to guarantee ISB2 ≤ 7 µA. Floating inputs may cause leakage-induced current spikes or unintended wake-up events.