Infineon Technologies CY62148ESL-55ZAXI

Overview

CY62148ESL-55ZAXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) CMOS static RAM with 55 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (2.5 µA typ), and automatic CE-controlled power-down. It interfaces directly with TTL-level processors in portable, industrial, and automotive memory subsystems.

For engineers reviewing the CY62148ESL-55ZAXI datasheet, CY62148ESL-55ZAXI pinout, CY62148ESL-55ZAXI application, or CY62148ESL-55ZAXI equivalent, key selection criteria include its dual-voltage support, 55 ns read cycle time, 32-pin STSOP package, MoBL™ low-power architecture, and compatibility with legacy 5 V and modern 2.5 V/3.3 V systems.

Technical Context

The CY62148ESL-55ZAXI implements a full CMOS SRAM core with complementary metal oxide semiconductor logic for optimized speed-to-power ratio. Its address space spans A0–A18 (19 bits), supporting 524,288 × 8-bit locations, and features independent CE/OE/WE control for flexible bus interfacing and seamless memory expansion.

Automatic power-down activates when CE is HIGH at CMOS level, reducing ICC to ≤7 µA max while placing I/O pins in high-impedance state. The device meets TTL input thresholds (VIH = 2.2 V min at 2.7–3.6 V VCC) but is not compatible with strict CMOS input level requirements.

Key Specifications

Pinout & Package

Package: 32-pin Shrunk Thin Small Outline Package (STSOP), 0.5 mm pitch, JEDEC MO-217 compliant, thermal resistance θJA = 49.02 °C/W (2-layer PCB).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61WV5128BLL-10MLI and AS6C4008-55TIN, the CY62148ESL-55ZAXI uniquely supports both 2.2–3.6 V and 4.5–5.5 V operation in a single part, enabling one-BOM solutions across product generations and eliminating voltage translation in mixed-supply systems.

Availability

CY62148ESL-55ZAXI is available at Aetrix Electronics and suitable for portable medical devices, industrial PLC memory buffers, and automotive ADAS camera modules requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY62148ESL-55ZAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.

The CY62148ESL belongs to Infineon's MoBL™ (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-reliability memory in battery-constrained and thermally demanding environments.

FAQ

Is CY62148ESL-55ZAXI compatible with 5 V microcontrollers?

Yes - it operates natively across 4.5–5.5 V and features TTL-compatible input thresholds (VIH ≥ 2.2 V at 2.7–3.6 V, and ≥ 2.2 V at 4.5–5.5 V), allowing direct interface with legacy 5 V MCUs without level shifters. However, it is not compatible with strict CMOS input level requirements (e.g., VIH = 0.7×VCC).

What happens to data during power interruption?

Data is retained down to VCC = 1.5 V with ICCDR ≤ 8.8 µA max. When CE is held HIGH and VCC drops into the 1.5–2.2 V range, the device enters data retention mode with no active refresh needed. Recovery time tR is 55 ns once VCC stabilizes above VCC(min).

Can CY62148ESL-55ZAXI be used in automotive applications?

Yes - the "A" suffix in CY62148ESL-55ZAXI denotes Industrial/Automotive-A grade, qualified for –40°C to +85°C ambient operation with full AC/DC specifications guaranteed across that range, including 55 ns access time and 7 µA max standby current.

Does this SRAM require external refresh circuitry?

No - as a static RAM, CY62148ESL-55ZAXI retains data indefinitely as long as power is applied and CE is not asserted during writes. No refresh cycles, clocks, or external timing control are required, unlike DRAM or pseudo-SRAM devices.