Infineon Technologies CY62148EV30LL-45BVXIT

Overview

CY62148EV30LL-45BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) CMOS static RAM with 45 ns access time, operating across 2.2 V–3.6 V supply, rated for –40 °C to +85 °C industrial/automotive-A temperature range, and packaged in a 36-ball VFBGA. It delivers ultra-low active current (3.5 mA typical at 1 MHz) and standby current (2.5 µA typical), enabling battery-sensitive portable applications including cellular handsets and IoT edge nodes.

For engineers reviewing the CY62148EV30LL-45BVXIT datasheet, CY62148EV30LL-45BVXIT pinout, CY62148EV30LL-45BVXIT application, or CY62148EV30LL-45BVXIT equivalent, key selection criteria include its MoBL® low-power architecture, automatic CE-driven power-down mode, pin compatibility with CY62148DV30, and verified performance in high-reliability embedded memory subsystems.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive CMOS memory array organized as 512K words × 8 bits, with fully decoded address inputs (A0–A18) and bidirectional I/O0–I/O7 data bus. Its logic block includes sense amplifiers, row/column decoders, and input buffers supporting independent CE/OE/WE control for precise read/write timing.

The device uses automatic power-down when CE is HIGH, reducing ICC to sub-µA levels while maintaining data retention down to 1.5 V. Tri-state output control ensures clean bus sharing, with tHZOE ≤ 18 ns and tLZCE = 10 ns, enabling integration into multi-chip memory systems without external bus contention management.

Key Specifications

Pinout & Package

Package: 36-ball very fine-pitch ball grid array (VFBGA), 0.5 mm pitch, 6 × 6 mm body, JEDEC MO-220 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with CY62148DV30-45ZSXI, this VFBGA variant offers 24% lower thermal resistance and 30% smaller PCB area; versus IS61LV5128AL-10TLI, it trades 55 ns slower access for 92% lower standby power and extended voltage flexibility - critical for battery longevity and mixed-supply designs.

Availability

CY62148EV30LL-45BVXIT is available at Aetrix Electronics and suitable for cellular handset memory buffers, industrial PLC data logging caches, and automotive ADAS camera pre-processing buffers requiring stable component supply across extended product lifecycles.

Supply support for CY62148EV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for automotive, industrial, and IoT markets.

This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded memory applications where battery runtime, thermal density, and long-term supply stability are primary design constraints.

FAQ

What is the minimum VCC required to retain data in CY62148EV30LL-45BVXIT?

The device guarantees data retention down to VCC = 1.5 V when CE is HIGH and ambient temperature remains within –40 °C to +85 °C. This is validated per datasheet parameter VDR and supports brown-out recovery in battery-powered systems without external backup capacitors.

Can CY62148EV30LL-45BVXIT be used with a 1.8 V microcontroller interface?

No - the device requires VCC between 2.2 V and 3.6 V and does not support 1.8 V I/O signaling. Interface to 1.8 V controllers requires level-shifting circuitry on all address, data, and control lines, as VIH(min) is 1.8 V at VCC = 2.2 V and scales with supply.

Is the 36-ball VFBGA package RoHS and REACH compliant?

Yes - the CY62148EV30LL-45BVXIT is manufactured with lead-free (Pb-free) terminations and complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in Infineon's official material declarations and packaging documentation.

Does this SRAM require an external clock signal?

No - CY62148EV30LL-45BVXIT is an asynchronous static RAM with no clock input. All operations are controlled by edge- and level-sensitive signals (CE, OE, WE), eliminating timing jitter concerns and simplifying interface design with microcontrollers lacking dedicated SRAM clocks.