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Infineon Technologies CY62148EV30LL-45BVXIT
- Part No.:
- CY62148EV30LL-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 36-VFBGA
- Datasheet:
-
CY62148EV30LL-45BVXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 36VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,391
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Product details
Overview
CY62148EV30LL-45BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) CMOS static RAM with 45 ns access time, operating across 2.2 V–3.6 V supply, rated for –40 °C to +85 °C industrial/automotive-A temperature range, and packaged in a 36-ball VFBGA. It delivers ultra-low active current (3.5 mA typical at 1 MHz) and standby current (2.5 µA typical), enabling battery-sensitive portable applications including cellular handsets and IoT edge nodes.
For engineers reviewing the CY62148EV30LL-45BVXIT datasheet, CY62148EV30LL-45BVXIT pinout, CY62148EV30LL-45BVXIT application, or CY62148EV30LL-45BVXIT equivalent, key selection criteria include its MoBL® low-power architecture, automatic CE-driven power-down mode, pin compatibility with CY62148DV30, and verified performance in high-reliability embedded memory subsystems.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive CMOS memory array organized as 512K words × 8 bits, with fully decoded address inputs (A0–A18) and bidirectional I/O0–I/O7 data bus. Its logic block includes sense amplifiers, row/column decoders, and input buffers supporting independent CE/OE/WE control for precise read/write timing.
The device uses automatic power-down when CE is HIGH, reducing ICC to sub-µA levels while maintaining data retention down to 1.5 V. Tri-state output control ensures clean bus sharing, with tHZOE ≤ 18 ns and tLZCE = 10 ns, enabling integration into multi-chip memory systems without external bus contention management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (512K × 8) - supports byte-wide data paths without external multiplexing |
| Access Time | 45 ns - enables direct interface with 22 MHz microcontrollers without wait states |
| Supply Voltage | 2.2 V to 3.6 V - compatible with single-supply Li-ion battery systems and mixed-voltage SoC interfaces |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial and automotive-A environments per AEC-Q100 stress profiles |
| Standby Current | 2.5 µA typical - reduces system quiescent power by >99% during sleep modes |
| Active Current | 3.5 mA typical at 1 MHz - enables sustained operation in always-on sensor hubs with <10 mW total memory power |
| Data Retention Voltage | 1.5 V minimum - preserves stored values during brown-out or backup-battery transitions |
Pinout & Package
Package: 36-ball very fine-pitch ball grid array (VFBGA), 0.5 mm pitch, 6 × 6 mm body, JEDEC MO-220 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus decoding 512K locations; no internal latching - requires stable address before CE assertion |
| I/O0–I/O7 | Bidirectional Data Bus | CMOS-compatible 8-bit I/O with high-impedance state controlled by CE/OE/WE; supports shared bus topology |
| CE | Chip Enable | Primary power-control signal: HIGH forces automatic power-down; LOW enables memory access and active current draw |
| OE | Output Enable | Controls output buffer enable only; does not affect power state - allows read-only wake-up without full activation |
| WE | Write Enable | Active-LOW write strobe; combined with CE LOW initiates write cycle; OE must be HIGH during writes |
| VCC, VSS | Power Supply | Dual power pins (one VCC, one VSS) minimize IR drop and improve noise immunity in high-speed operation |
| NC | No Connect | Two unconnected balls (pins D1, F1); must remain unconnected on PCB layout per datasheet guidance |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 3.5 mA at 1 MHz and standby to 2.5 µA - extends battery life in portable devices beyond 10× versus standard SRAMs |
| Automatic CE-Controlled Power-Down | Eliminates need for external power sequencing logic; enters sub-µA retention mode within 45 ns of CE deassertion |
| Pin Compatibility with CY62148DV30 | Enables drop-in replacement in legacy designs without PCB redesign or firmware changes |
| Tri-State Output Timing Control | tHZOE ≤ 18 ns and tLZCE = 10 ns ensure glitch-free bus release and fast reacquisition in multi-master systems |
| Wide Voltage Operation (2.2–3.6 V) | Supports direct connection to buck-boost regulators and single-cell Li-ion batteries without level-shifting circuitry |
Applications
| Cellular Handset Memory Buffer | Industrial PLC Data Logging Cache |
|---|---|
Use Scenario: Stores real-time call signaling data and audio buffers in dual-mode GSM/LTE handsets powered by 3.3 V Li-ion batteries. IC Role / Device Role / Timing Role: Byte-wide SRAM acting as low-latency working memory for baseband processor, accessed at 22 MHz burst rates. Use Value: 45 ns access and 2.5 µA standby reduce average power consumption by 87% versus 55 ns alternatives, extending talk time by 42 minutes per charge. | Use Scenario: Caches sensor readings and control command history in DIN-rail mounted programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Nonvolatile-retentive cache holding last 128 KB of operational logs during AC brown-outs or firmware updates. Use Value: Data retention down to 1.5 V ensures zero data loss during 100 ms power interruptions, meeting IEC 61000-4-11 immunity requirements. |
| Automotive ADAS Camera Pre-Processing Buffer | Medical Wearable Sensor Aggregation Memory |
Use Scenario: Buffers raw image frames from 1.3 MP CMOS image sensors in rear-view camera modules before JPEG compression in automotive-A grade systems. IC Role / Device Role / Timing Role: High-reliability SRAM interfaced to ASIC image pipeline via parallel 8-bit bus with strict 45 ns timing closure. Use Value: –40 °C to +85 °C qualification and 44.79 °C/W θJA enable passive thermal design without heatsinks, reducing BOM cost by $0.32/unit. | Use Scenario: Holds synchronized ECG, SpO₂, and accelerometer streams in FDA-cleared wearable patches powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-leakage memory storing 64-second waveform history for Bluetooth LE transmission bursts every 5 seconds. Use Value: 3.5 mA active current at 1 MHz allows continuous sampling for 14 days on CR2032, exceeding ISO 14155 clinical trial duration requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148DV30-45ZSXI | Same 4-Mbit × 8 organization and 45 ns speed, but offered in 32-pin TSOP II package with higher θJA (59.10 °C/W) and no VFBGA option | Suitable for board-level space-constrained designs where VFBGA rework is impractical; less optimal for thermally dense layouts | Select when manual assembly, test accessibility, or legacy footprint compatibility outweighs size/power advantages |
| IS61LV5128AL-10TLI | 512K × 8, 10 ns access, 3.3 V only, 32-pin SOIC; higher ICC (18 mA max) and ISB (30 µA max) | Used in legacy industrial controllers requiring faster access but tolerating higher power and larger footprint | Select only if system clock exceeds 100 MHz and thermal budget permits 7× higher standby current |
Compared with CY62148DV30-45ZSXI, this VFBGA variant offers 24% lower thermal resistance and 30% smaller PCB area; versus IS61LV5128AL-10TLI, it trades 55 ns slower access for 92% lower standby power and extended voltage flexibility - critical for battery longevity and mixed-supply designs.
Availability
CY62148EV30LL-45BVXIT is available at Aetrix Electronics and suitable for cellular handset memory buffers, industrial PLC data logging caches, and automotive ADAS camera pre-processing buffers requiring stable component supply across extended product lifecycles.
Supply support for CY62148EV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for automotive, industrial, and IoT markets.
This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded memory applications where battery runtime, thermal density, and long-term supply stability are primary design constraints.
FAQ
What is the minimum VCC required to retain data in CY62148EV30LL-45BVXIT?
The device guarantees data retention down to VCC = 1.5 V when CE is HIGH and ambient temperature remains within –40 °C to +85 °C. This is validated per datasheet parameter VDR and supports brown-out recovery in battery-powered systems without external backup capacitors.
Can CY62148EV30LL-45BVXIT be used with a 1.8 V microcontroller interface?
No - the device requires VCC between 2.2 V and 3.6 V and does not support 1.8 V I/O signaling. Interface to 1.8 V controllers requires level-shifting circuitry on all address, data, and control lines, as VIH(min) is 1.8 V at VCC = 2.2 V and scales with supply.
Is the 36-ball VFBGA package RoHS and REACH compliant?
Yes - the CY62148EV30LL-45BVXIT is manufactured with lead-free (Pb-free) terminations and complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in Infineon's official material declarations and packaging documentation.
Does this SRAM require an external clock signal?
No - CY62148EV30LL-45BVXIT is an asynchronous static RAM with no clock input. All operations are controlled by edge- and level-sensitive signals (CE, OE, WE), eliminating timing jitter concerns and simplifying interface design with microcontrollers lacking dedicated SRAM clocks.
CY62148EV30LL-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 36-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-VFBGA (6x8)
CY62148EV30LL-45BVXIT FAQ
1.How can I place an order for CY62148EV30LL-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62148EV30LL-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62148EV30LL-45BVXIT reliable?
The price and inventory of CY62148EV30LL-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62148EV30LL-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62148EV30LL-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62148EV30LL-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62148EV30LL-45BVXIT?
CY62148EV30LL-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62148EV30LL-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62148EV30LL-45BVXIT?
For technical support, including CY62148EV30LL-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62148EV30LL-45BVXIT requirements.
6.How does Aetrix verify that CY62148EV30LL-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62148EV30LL-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62148EV30LL-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62148EV30LL-45BVXIT?
All CY62148EV30LL-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62148EV30LL-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62148EV30LL-45BVXIT part is unused and in its original packaging.
Return procedure for CY62148EV30LL-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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