Infineon Technologies CY62148EV30LL-45ZSXI

Overview

CY62148EV30LL-45ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature support (–40 °C to +85 °C). It delivers ultra-low standby current (2.5 µA typical), active current of 3.5 mA at 1 MHz, and automatic CE-controlled power-down-enabling battery-sensitive portable electronics including cellular handsets and handheld medical devices.

For engineers reviewing the CY62148EV30LL-45ZSXI datasheet, CY62148EV30LL-45ZSXI pinout, CY62148EV30LL-45ZSXI application, or CY62148EV30LL-45ZSXI equivalent, key selection criteria include its VFBGA-36 package compatibility, MoBL® low-power architecture, CE/OE/WE control interface timing, and data retention capability down to 1.5 V.

Technical Context

This SRAM implements a full CMOS 512K × 8 array with synchronous address decoding, complementary sense amplifiers, and automatic power-down logic triggered by CE HIGH. Its architecture supports seamless memory expansion via CE and OE enable features and ensures I/O pins enter high-impedance state during deselect, output disable, or write cycles.

Timing compliance is defined across two speed bins: the -45 variant guarantees tRC ≤ 45 ns, tAA ≤ 45 ns, and tPD ≤ 45 ns under industrial conditions (VCC = 2.2–3.6 V, TA = –40 °C to +85 °C), while maintaining strict VIH/VIL thresholds and sub-7 µA maximum ISB2 standby current.

Key Specifications

Pinout & Package

The CY62148EV30LL-45ZSXI is packaged in a 36-ball very fine-pitch ball grid array (VFBGA) with 0.5 mm pitch, JEDEC MO-276 compliant, and marked "ZSXI" per ordering code. This RoHS-compliant, lead-free package supports high-density PCB layouts and thermal dissipation via exposed die pad (θJA = 44.79 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV5128BLL-45NLI and AS6C4008-45TIN, the CY62148EV30LL-45ZSXI uniquely supports 2.2 V operation and achieves 7 µA max standby in VFBGA-36-making it the only option for compact, wide-input-voltage, ultra-low-leakage embedded SRAM applications.

Availability

CY62148EV30LL-45ZSXI is available at Aetrix Electronics and suitable for cellular handset memory buffers, portable medical monitor data caches, and industrial PLC I/O mapping tables requiring stable component supply across extended product lifecycles.

Supply support for CY62148EV30LL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for automotive, industrial, and IoT markets.

This device belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability memory in portable and energy-constrained embedded systems.

FAQ

Is CY62148EV30LL-45ZSXI pin-compatible with CY62148DV30?

Yes. The CY62148EV30LL-45ZSXI shares identical VFBGA-36 pinout, signal definitions, and AC/DC electrical specifications with CY62148DV30. No PCB modification is needed for drop-in replacement, and both support the same 45 ns speed grade and industrial temperature range.

What is the minimum VCC required to retain data?

The device guarantees data retention down to VCC = 1.5 V, as specified in the ICCDR parameter. At this voltage, typical retention current is 3 µA and maximum is 8.8 µA under industrial conditions. Retention mode activates automatically when CE is HIGH and VCC remains ≥1.5 V.

Does the ZSXI suffix indicate RoHS compliance and lead-free finish?

Yes. The "ZSXI" ordering code denotes a lead-free, RoHS-compliant 36-ball VFBGA package with matte tin surface finish, per Infineon's standard Pb-free manufacturing process. It meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) and requires bake conditioning before reflow if exposed >168 hours at ambient conditions.

Can this SRAM operate reliably at 2.2 V across the full industrial temperature range?

Yes. Electrical characteristics-including tRC ≤ 45 ns, VIH ≥ 1.8 V, and ISB2 ≤ 7 µA-are fully specified and tested over –40 °C to +85 °C at VCC = 2.2 V. The device meets all AC and DC parameters in this condition, making it suitable for direct connection to partially discharged Li-ion cells.