Infineon Technologies CY62148GN30-45SXI
- Part No.:
- CY62148GN30-45SXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 32-SOIC (0.400", 10.16mm Width)
- Datasheet:
-
CY62148GN30-45SXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 32TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:4,646
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Product details
Overview
CY62148GN30-45SXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (3.5 µA typical), and automatic CE-controlled power-down. It serves as main or buffer memory in portable industrial controllers requiring deterministic timing and battery longevity.
For engineers reviewing the CY62148GN30-45SXI datasheet, CY62148GN30-45SXI pinout, CY62148GN30-45SXI application, or CY62148GN30-45SXI equivalent, key selection criteria include guaranteed 45 ns read/write cycle timing, dual-voltage compatibility, sub-10 µA max ISB2 standby current, TSOP II/SOIC package footprint, and MoBL® low-power architecture for extended runtime in energy-constrained systems.
Technical Context
This SRAM implements a full CMOS 512K × 8 array with independent address decoding (A0–A18), eight bidirectional I/O lines (I/O0–I/O7), and three control inputs (CE, OE, WE) enabling precise bus arbitration and seamless memory expansion. Its automatic power-down logic activates when CE is HIGH, reducing ICC to ≤8.7 µA without external sequencing.
The device supports two distinct VCC operating bands: low-voltage mode (2.2–3.6 V) optimized for battery-powered instrumentation, and 5 V mode (4.5–5.5 V) for legacy industrial backplanes. All AC parameters-including tRC = 45 ns, tAA = 45 ns, and tHZOE ≤ 18 ns-are fully specified and tested across –40 °C to +85 °C industrial temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (512K × 8) - provides byte-wide data path compatible with 8-bit microcontrollers and FPGA configuration buffers |
| Access Time | 45 ns - guarantees deterministic read latency for real-time control loops with ≤22 MHz bus clocking |
| VCC Range | 2.2–3.6 V or 4.5–5.5 V - enables direct integration into mixed-supply systems without level shifters |
| Standby Current | Max 8.7 µA at VCC(max) - extends battery life >10 years in always-on sensor nodes with periodic wake-up |
| Operating Temperature | –40 °C to +85 °C - qualified for deployment in industrial PLCs, motor drives, and outdoor metering hardware |
| Package | 32-pin TSOP II (0.4 mm pitch) - surface-mount compatible with automated SMT assembly and high-density PCB layouts |
| Power-Down Trigger | CE HIGH at CMOS level - eliminates need for external sleep controllers; transitions to retention mode within 45 ns |
Pinout & Package
Available in Pb-free 32-pin thin small outline package (TSOP II), 10.2 mm × 14.2 mm body, 0.4 mm lead pitch, JEDEC MO-143AC compliant. Pin 1 index marked by notch or dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; no internal latching - requires stable address during CE LOW |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit tristate I/O lines; high-impedance when CE HIGH, OE HIGH, or WE LOW - prevents bus contention during write or deselect |
| CE | Chip Enable | Active-LOW enable controlling power state; HIGH forces automatic power-down and disables outputs regardless of OE/WE |
| OE | Output Enable | Active-LOW control for read data output; must be LOW with CE LOW and WE HIGH to drive I/O pins with valid data |
| WE | Write Enable | Active-LOW signal initiating write cycle; concurrent CE LOW and WE LOW latches data from I/O0–I/O7 into addressed location |
| VCC | Supply Voltage | Single supply input supporting dual voltage ranges; decoupling capacitor required at pin for noise immunity and transient response |
| VSS | Ground | Reference return path for all signals; separate VSS pin ensures stable reference under dynamic switching conditions |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces standby current to ≤8.7 µA while maintaining full data retention - critical for coin-cell-powered IoT edge nodes |
| Automatic CE-Controlled Power-Down | Eliminates external power management ICs; enters low-power state within 45 ns of CE deassertion without software intervention |
| Dual-Voltage Operation | Supports both 2.5 V/3.3 V and 5 V system rails without voltage translation - simplifies BOM in multi-generation designs |
| High-Speed 45 ns Timing | Meets strict timing budgets for 22 MHz synchronous buses; tHZOE ≤ 18 ns enables fast bus turnaround in shared-memory architectures |
| Industrial Temperature Range | Validated operation from –40 °C to +85 °C - suitable for uncontrolled environments including factory floors and utility substations |
Applications
| Portable Data Loggers | Industrial PLC I/O Modules |
|---|---|
|
Use Scenario: Battery-operated environmental sensors record temperature, humidity, and pressure at 1-second intervals for 30 days before upload. IC Role / Device Role / Timing Role: Primary data buffer storing timestamped samples; retains data during deep-sleep cycles between measurements. Use Value: 3.5 µA typical ISB2 enables >5-year battery life on CR2032; 45 ns access allows rapid burst writes during active sampling windows. |
Use Scenario: Modular PLC base unit interfaces with analog input cards, digital I/O expanders, and communication gateways via shared backplane. IC Role / Device Role / Timing Role: Local scratchpad memory for firmware patch storage and real-time process variable buffering. Use Value: Dual-voltage support (2.2–3.6 V / 4.5–5.5 V) accommodates mixed-voltage backplane designs; TSOP II footprint fits constrained card-edge space. |
| Smart Utility Meters | Medical Diagnostic Handhelds |
|
Use Scenario: Electricity meters store tariff data, consumption history, and event logs for remote retrieval over RF or PLC networks. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding critical billing records during mains failure or firmware updates. Use Value: Automatic CE power-down preserves data integrity during brownouts; 1 V data retention capability (VDR ≥ 1.0 V) ensures reliability down to near-zero supply. |
Use Scenario: Portable ultrasound or ECG devices acquire and preprocess waveform data before wireless transmission to cloud platforms. IC Role / Device Role / Timing Role: High-speed frame buffer staging raw ADC samples prior to DSP compression and encryption. Use Value: 45 ns tRC and tWC support 22 MHz parallel bus throughput; low capacitance (CIN/COUT ≤ 10 pF) minimizes signal distortion on high-frequency traces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV5128BLL-45NLI | Same density (512K × 8), 45 ns speed, but single 2.7–3.6 V supply only; no 5 V mode | Not suitable for 5 V legacy industrial backplanes; requires level-shifting in mixed-rail systems | Select when design uses only 3.3 V rail and prioritizes lower cost over voltage flexibility |
| ON Semiconductor NVSRAM NVTFS4M8T1G | Nonvolatile SRAM with integrated EEPROM backup; higher standby current (15 µA typ); 55 ns access | Provides automatic data retention after power loss; trades speed and power for nonvolatility | Select when data persistence through unexpected power interruption is mandatory, not just low-power operation |
Compared with IS62WV5128BLL-45NLI and NVTFS4M8T1G, CY62148GN30-45SXI uniquely balances dual-voltage support, 45 ns performance, and sub-10 µA standby-making it optimal for portable industrial equipment where supply voltage variation and battery runtime are primary constraints.
Availability
CY62148GN30-45SXI is available at Aetrix Electronics and suitable for portable data loggers, industrial PLC I/O modules, and smart utility meters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.
Supply support for CY62148GN30-45SXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and automotive focus.
CY62148GN30-45SXI belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability memory in portable and energy-sensitive industrial electronics.
FAQ
What is the minimum VCC required for data retention in CY62148GN30-45SXI?
The device guarantees data retention down to VCC = 1.0 V (VDR ≥ 1.0 V), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤13 µA, and the chip maintains stored contents without refresh. This enables reliable operation during brownout conditions or gradual battery discharge in portable systems.
Can CY62148GN30-45SXI operate reliably at 2.5 V and still meet its 45 ns timing specifications?
Yes. The 45 ns access time (tRC, tAA, tWC) is fully specified and tested across the entire 2.2–3.6 V range, including 2.5 V operation. Electrical characteristics tables confirm VOH, VOL, and switching parameters remain compliant at VCC = 2.5 V with appropriate load conditions per Figure 2 test setup.
Does the TSOP II package of CY62148GN30-45SXI support reflow soldering per J-STD-020?
Yes. The Pb-free 32-pin TSOP II package is qualified for standard lead-free reflow profiles per J-STD-020D, with peak temperature up to 260 °C and time above liquidus (TAL) of 60–150 seconds. Thermal resistance data (θJA = 79.03 °C/W) confirms suitability for convection-reflow processes on standard four-layer PCBs.
How does the automatic power-down feature interact with OE and WE during CE HIGH assertion?
When CE is driven HIGH at CMOS level, the device immediately enters power-down mode regardless of OE or WE state. I/O pins go high-impedance, internal arrays are gated, and ICC drops to ≤8.7 µA. OE and WE become irrelevant for power control - only CE determines active vs. retention state.
CY62148GN30-45SXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 32-SOIC (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP II
CY62148GN30-45SXI FAQ
1.How can I place an order for CY62148GN30-45SXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62148GN30-45SXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62148GN30-45SXI reliable?
The price and inventory of CY62148GN30-45SXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62148GN30-45SXI is usually 5 days.
3.What payment methods are accepted for CY62148GN30-45SXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62148GN30-45SXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62148GN30-45SXI?
CY62148GN30-45SXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62148GN30-45SXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62148GN30-45SXI?
For technical support, including CY62148GN30-45SXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62148GN30-45SXI requirements.
6.How does Aetrix verify that CY62148GN30-45SXI is sourced from the original manufacturer or authorized distributors?
All CY62148GN30-45SXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62148GN30-45SXI meets industry standards.
7.What is the process for return or replacement of CY62148GN30-45SXI?
All CY62148GN30-45SXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62148GN30-45SXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62148GN30-45SXI part is unused and in its original packaging.
Return procedure for CY62148GN30-45SXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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