Infineon Technologies CY62148GN30-45SXI

Overview

CY62148GN30-45SXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (3.5 µA typical), and automatic CE-controlled power-down. It serves as main or buffer memory in portable industrial controllers requiring deterministic timing and battery longevity.

For engineers reviewing the CY62148GN30-45SXI datasheet, CY62148GN30-45SXI pinout, CY62148GN30-45SXI application, or CY62148GN30-45SXI equivalent, key selection criteria include guaranteed 45 ns read/write cycle timing, dual-voltage compatibility, sub-10 µA max ISB2 standby current, TSOP II/SOIC package footprint, and MoBL® low-power architecture for extended runtime in energy-constrained systems.

Technical Context

This SRAM implements a full CMOS 512K × 8 array with independent address decoding (A0–A18), eight bidirectional I/O lines (I/O0–I/O7), and three control inputs (CE, OE, WE) enabling precise bus arbitration and seamless memory expansion. Its automatic power-down logic activates when CE is HIGH, reducing ICC to ≤8.7 µA without external sequencing.

The device supports two distinct VCC operating bands: low-voltage mode (2.2–3.6 V) optimized for battery-powered instrumentation, and 5 V mode (4.5–5.5 V) for legacy industrial backplanes. All AC parameters-including tRC = 45 ns, tAA = 45 ns, and tHZOE ≤ 18 ns-are fully specified and tested across –40 °C to +85 °C industrial temperature range.

Key Specifications

Pinout & Package

Available in Pb-free 32-pin thin small outline package (TSOP II), 10.2 mm × 14.2 mm body, 0.4 mm lead pitch, JEDEC MO-143AC compliant. Pin 1 index marked by notch or dot.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV5128BLL-45NLI and NVTFS4M8T1G, CY62148GN30-45SXI uniquely balances dual-voltage support, 45 ns performance, and sub-10 µA standby-making it optimal for portable industrial equipment where supply voltage variation and battery runtime are primary constraints.

Availability

CY62148GN30-45SXI is available at Aetrix Electronics and suitable for portable data loggers, industrial PLC I/O modules, and smart utility meters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for CY62148GN30-45SXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and automotive focus.

CY62148GN30-45SXI belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability memory in portable and energy-sensitive industrial electronics.

FAQ

What is the minimum VCC required for data retention in CY62148GN30-45SXI?

The device guarantees data retention down to VCC = 1.0 V (VDR ≥ 1.0 V), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤13 µA, and the chip maintains stored contents without refresh. This enables reliable operation during brownout conditions or gradual battery discharge in portable systems.

Can CY62148GN30-45SXI operate reliably at 2.5 V and still meet its 45 ns timing specifications?

Yes. The 45 ns access time (tRC, tAA, tWC) is fully specified and tested across the entire 2.2–3.6 V range, including 2.5 V operation. Electrical characteristics tables confirm VOH, VOL, and switching parameters remain compliant at VCC = 2.5 V with appropriate load conditions per Figure 2 test setup.

Does the TSOP II package of CY62148GN30-45SXI support reflow soldering per J-STD-020?

Yes. The Pb-free 32-pin TSOP II package is qualified for standard lead-free reflow profiles per J-STD-020D, with peak temperature up to 260 °C and time above liquidus (TAL) of 60–150 seconds. Thermal resistance data (θJA = 79.03 °C/W) confirms suitability for convection-reflow processes on standard four-layer PCBs.

How does the automatic power-down feature interact with OE and WE during CE HIGH assertion?

When CE is driven HIGH at CMOS level, the device immediately enters power-down mode regardless of OE or WE state. I/O pins go high-impedance, internal arrays are gated, and ICC drops to ≤8.7 µA. OE and WE become irrelevant for power control - only CE determines active vs. retention state.