Infineon Technologies CY62148GN30-45SXIT

Overview

CY62148GN30-45SXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (3.5 µA typical), and automatic CE-controlled power-down. It serves as main data buffer memory in portable industrial controllers requiring non-volatile retention support and low-power sleep modes.

For engineers reviewing the CY62148GN30-45SXIT datasheet, CY62148GN30-45SXIT pinout, CY62148GN30-45SXIT application, or CY62148GN30-45SXIT equivalent, key selection criteria include verified 45 ns read/write timing, dual-voltage compatibility, TSOP II/SOIC package mapping, MoBL®-certified battery-life extension, and CE/OE/WE control logic behavior under industrial temperature range (–40 °C to +85 °C).

Technical Context

This SRAM implements a fully static 512K × 8 architecture with asynchronous parallel interface, CMOS-compatible input/output levels, and independent address/data bus separation. Its automatic power-down activates when CE is HIGH, reducing ICC to ≤8.7 µA while maintaining data integrity at VCC ≥ 1.0 V.

Timing is defined by strict AC parameters: tRC = 45 ns, tAA = 45 ns, tDOE = 22 ns, and tHZOE/tHZCE ≤ 18 ns - all guaranteed over full industrial temperature and dual supply ranges. Data retention current (ICCDR) is specified at ≤13 µA with VDR ≥ 1.0 V.

Key Specifications

Pinout & Package

Available in Pb-free 32-pin TSOP II (Type II) and 32-pin SOIC packages. Pinout is identical across both packages per Figure 1 of datasheet Rev. *D.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV5128BLL-45NLI and N25S80-45G1T3F, CY62148GN30-45SXIT uniquely delivers dual-voltage operation and MoBL®-optimized standby current in industry-standard TSOP II/SOIC packages - making it optimal for cost-sensitive, battery-aware industrial designs where voltage flexibility and footprint compatibility are critical.

Availability

CY62148GN30-45SXIT is available at Aetrix Electronics and suitable for portable data loggers, industrial PLC I/O modules, medical wearable monitors, and smart meter communication modules requiring stable component supply across extended temperature and dual-voltage environments.

Supply support for CY62148GN30-45SXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and memory solutions with strong industrial and IoT focus.

CY62148GN30-45SXIT belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable and battery-operated industrial electronics requiring fast, reliable, and voltage-flexible memory.

FAQ

What voltage ranges does CY62148GN30-45SXIT support?

CY62148GN30-45SXIT supports two distinct supply ranges: 2.2 V to 3.6 V and 4.5 V to 5.5 V. It is not rated for operation between 3.6 V and 4.5 V. The device automatically adapts I/O thresholds and internal biasing to each range without external configuration, enabling true dual-voltage interoperability in mixed-rail systems.

How does the automatic power-down feature work?

When Chip Enable (CE) is driven HIGH at CMOS level, the device enters automatic power-down mode, reducing ICC to ≤8.7 µA. All I/O pins go high-impedance, internal arrays are gated, and dynamic power drops >99%. This occurs independently of OE and WE states and requires no clock or software intervention - ideal for intermittent polling architectures.

Is CY62148GN30-45SXIT pin-compatible with other 32-pin SRAMs?

Yes - CY62148GN30-45SXIT shares identical pinout and signal assignment with industry-standard 32-pin TSOP II and SOIC SRAMs including the CY62147 and IS62WV5128. Address (A0–A18), data (I/O0–I/O7), and control (CE/OE/WE) pins map directly, enabling drop-in replacement where timing and voltage match.

What is the minimum VCC required to retain data?

Data retention is guaranteed down to VCC = 1.0 V (VDR ≥ 1.0 V), with ICCDR ≤ 13 µA. At this voltage, the device maintains stored bits indefinitely as long as CE remains HIGH and ambient temperature stays within –40 °C to +85 °C. No external capacitor or backup source is needed for short-duration brown-outs.