Infineon Technologies CY62148GN30-45ZSXI

Overview

CY62148GN30-45ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (3.5 µA typical), and automatic CE-controlled power-down. It serves as main or buffer memory in portable industrial controllers requiring deterministic timing and battery longevity.

For engineers reviewing the CY62148GN30-45ZSXI datasheet, CY62148GN30-45ZSXI pinout, CY62148GN30-45ZSXI application, or CY62148GN30-45ZSXI equivalent, key selection criteria include guaranteed 45 ns read/write cycle timing, dual-voltage compatibility, sub-10 µA max standby current, TSOP II/SOIC package footprint, and MoBL® low-power architecture for energy-constrained embedded systems.

Technical Context

This SRAM implements a fully static 512K × 8 array with complementary metal oxide semiconductor (CMOS) process technology, enabling zero-refresh operation and deterministic timing without clock dependency. Its logic-level control interface uses asynchronous CE/OE/WE signals to manage read, write, and automatic power-down states.

The device supports two distinct VCC operating ranges-2.2–3.6 V and 4.5–5.5 V-with separate AC/DC specifications per range. Standby current drops below 10 µA when CE is HIGH, and data retention remains valid down to 1.0 V with ICCDR ≤ 13 µA, enabling robust brown-out resilience in portable instrumentation.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP II), 10.16 mm × 13.10 mm body, 0.5 mm lead pitch, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS62WV5128BLL-45NLI and NVMFS0418M08T1G, CY62148GN30-45ZSXI uniquely balances dual-voltage operation, ultra-low standby power, and pure SRAM determinism-making it optimal for battery-critical, mixed-rail industrial edge nodes where nonvolatility is unnecessary.

Availability

CY62148GN30-45ZSXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC I/O modules, and smart utility meters requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.

Supply support for CY62148GN30-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions acquired from Cypress Semiconductor.

CY62148GN30-45ZSXI belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded systems where deterministic timing and extended battery runtime are primary design constraints.

FAQ

Does CY62148GN30-45ZSXI require an external clock or refresh circuitry?

No. This is a fully static RAM: all timing is asynchronous and governed solely by CE, OE, and WE control signals. No clock input or periodic refresh is needed-data remains valid indefinitely as long as VCC is maintained above VDR (1.0 V) and CE is held HIGH in standby. The 45 ns access time applies to both read and write cycles without internal timing dependencies.

Can CY62148GN30-45ZSXI operate reliably at 3.3 V and 5.0 V within the same system?

Yes-this device is explicitly characterized for two disjoint VCC ranges: 2.2–3.6 V and 4.5–5.5 V. It cannot operate continuously across the 3.6–4.5 V gap, but supports seamless migration between 3.3 V and 5.0 V domains via board-level voltage selection. Each range has independent AC/DC specs validated per datasheet tables.

What happens to data during a brown-out condition where VCC drops below 2.2 V but stays above 1.0 V?

When VCC falls between 1.0 V (VDR) and 2.2 V, the device enters data retention mode: CE must remain HIGH, all inputs held at valid logic levels, and ICCDR remains ≤13 µA. Data is preserved without corruption, and full functionality resumes within 45 ns after VCC rises above VCC(min) and stabilizes-no reset or reinitialization required.

Is the TSOP II package of CY62148GN30-45ZSXI compatible with standard SOIC socket footprints?

No. The 32-pin TSOP II (10.16 mm × 13.10 mm, 0.5 mm pitch) and 32-pin SOIC (11.9 mm × 19.8 mm, 1.27 mm pitch) are mechanically and solder-profile incompatible. Pinout is identical between packages, but PCB land patterns, stencil apertures, and reflow profiles differ significantly-separate layouts are required for each variant.