Infineon Technologies CY62148GN-45ZSXIT

Overview

CY62148GN-45ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (3.5 µA typical), and automatic CE-controlled power-down. It serves as main or buffer memory in portable industrial controllers requiring deterministic timing and battery longevity.

For engineers reviewing the CY62148GN-45ZSXIT datasheet, CY62148GN-45ZSXIT pinout, CY62148GN-45ZSXIT application, or CY62148GN-45ZSXIT equivalent, key selection criteria include guaranteed 45 ns read cycle time, dual-voltage compatibility, CE/OE/WE control logic, TSOP II package footprint, and MoBL®-optimized standby power for energy-constrained embedded systems.

Technical Context

This SRAM implements a full CMOS architecture with complementary metal oxide semiconductor transistors to balance speed and leakage. Its 512K × 8 organization uses 19 address lines (A0–A18) and eight bidirectional I/O pins, supporting byte-wide data transfers without external bus transceivers.

The device features two distinct low-power states: ISB1 (dynamic CE power-down during address stability) and ISB2 (static CE HIGH standby), both specified at ≤8.7 µA max under industrial temperature range (–40°C to +85°C). Data retention operates down to VDR = 1.0 V with ICCDR ≤13 µA.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP) II, 12.0 mm × 20.0 mm body, 0.5 mm lead pitch, JEDEC MO-143AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV5128AL-10TLI and AS6C4008-55TIN, CY62148GN-45ZSXIT uniquely balances 45 ns performance, dual-voltage flexibility, and sub-9 µA standby-making it optimal for portable industrial devices needing both responsiveness and multi-year battery life.

Availability

CY62148GN-45ZSXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC I/O modules, wireless sensor nodes, and automated test equipment requiring stable component supply across long production lifecycles.

Supply support for CY62148GN-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and memory solutions acquired through its 2020 acquisition of Cypress Semiconductor.

CY62148GN belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable and battery-operated industrial electronics where memory retention and standby efficiency are critical design constraints.

FAQ

What voltage ranges does CY62148GN-45ZSXIT support?

CY62148GN-45ZSXIT supports two non-overlapping voltage ranges: 2.2 V to 3.6 V and 4.5 V to 5.5 V. It does not operate reliably between 3.6 V and 4.5 V. The device automatically adapts internal biasing to each range, ensuring correct logic thresholds and timing compliance without external configuration.

How does the automatic power-down feature work?

When Chip Enable (CE) is driven HIGH at CMOS level, the device enters automatic power-down mode within 45 ns, reducing supply current to ≤8.7 µA. This occurs regardless of OE or WE state, and requires no clock or address activity. All I/O pins enter high-impedance state, preserving data integrity while minimizing energy use.

Is CY62148GN-45ZSXIT pin-compatible with other 32-pin TSOP II SRAMs?

Yes-CY62148GN-45ZSXIT follows JEDEC MO-143AC mechanical dimensions and pinout definition for 32-pin TSOP II packages. Its signal mapping (A0–A18, I/O0–I/O7, CE/OE/WE, VCC/VSS) matches industry-standard 512K × 8 SRAM footprints, enabling direct PCB-level substitution where timing and voltage match.

What is the minimum VCC required to retain stored data?

The device guarantees data retention down to VCC = 1.0 V (VDR), provided CE remains HIGH and input pins are held at valid logic levels. At this voltage, ICCDR is specified ≤13 µA. Retention time is indefinite under stable 1.0 V bias, but recovery to full operation requires ramping VCC back to ≥2.2 V with ≥100 µs linear rise time.