Infineon Technologies CY62156ESL-45BVXI

Overview

CY62156ESL-45BVXI from Infineon Technologies (formerly Cypress) is a MoBL® 8-Mbit (512 K × 16) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (2 µA typical), and automatic CE power-down mode. It serves as a low-power data buffer in portable embedded systems requiring fast, reliable non-volatile-adjacent memory retention.

For engineers reviewing the CY62156ESL-45BVXI datasheet, CY62156ESL-45BVXI pinout, CY62156ESL-45BVXI application, or CY62156ESL-45BVXI equivalent, key selection criteria include dual-voltage support, byte-enable-controlled 16-bit I/O partitioning, VFBGA-48 package compatibility, and sub-3 µA ISB2 standby current under industrial temperature range (–40 °C to +85 °C).

Technical Context

This SRAM implements a 512 K × 16 organization with independent Byte High Enable (BHE) and Byte Low Enable (BLE) inputs for selective 8-bit writes, enabling efficient partial-word updates without read-modify-write cycles. Its dual chip enable architecture (CE1/CE2) supports hierarchical memory mapping and automatic power-down when either CE1 is HIGH or CE2 is LOW.

The device uses CMOS circuitry optimized for speed–power trade-off, delivering 1.8 mA typical active current at 1 MHz while maintaining 45 ns tRC and tAA timing. Data retention is guaranteed down to 1.5 V with ICCDR ≤ 5 µA, supporting battery-backed operation during brown-out conditions.

Key Specifications

Pinout & Package

Package: 48-ball very fine-pitch ball grid array (VFBGA), 6 mm × 8 mm footprint, 0.5 mm ball pitch, JEDEC MO-270 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV51216BLL-45NLI and R1LV5256ES-45PB, CY62156ESL-45BVXI uniquely supports both 3.3 V and 5 V operation, offers the lowest ISB2 (2 µA typical), and maintains data retention down to 1.5 V - making it optimal for battery-powered systems requiring wide input voltage tolerance and extended backup runtime.

Availability

CY62156ESL-45BVXI is available at Aetrix Electronics and suitable for wireless baseband processing, industrial PLC data logging, medical wearable sensor hubs, and automotive body control modules requiring stable component supply across industrial temperature range and dual-voltage operation.

Supply support for CY62156ESL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.

CY62156ESL belongs to Infineon's MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable and battery-operated electronics where extended runtime and rapid wake-up response are critical.

FAQ

What is the maximum clock frequency supported for synchronous interface operation?

CY62156ESL-45BVXI is an asynchronous SRAM and does not use a clock signal. Its timing is governed by access parameters such as tRC (45 ns), tAA (45 ns), and tDOE (22 ns). System bus frequency must be derived from these parameters - for example, a 45 ns tRC corresponds to a maximum effective bus rate of approximately 22.2 MHz for consecutive random accesses.

Can CE1 and CE2 be tied together for simplified control?

Yes, CE1 and CE2 can be connected externally to function as a single active-Low chip enable, but this disables the automatic power-down feature triggered by CE1 HIGH / CE2 LOW. Doing so increases standby current to ISB1 levels (up to 25 µA), eliminating the 2 µA ISB2 advantage. Use separate control only if hierarchical memory mapping or lowest possible standby power is required.

Does the VFBGA-48 package require special PCB layout considerations?

Yes. The 0.5 mm pitch VFBGA demands controlled impedance routing, solder mask defined pads, and thermal vias under the package body. IPC-7351B land pattern compliance is mandatory. Thermal resistance (θJA = 72 °C/W) assumes a two-layer 3 × 4.5 inch board - denser layouts require additional copper pour and thermal vias to maintain junction temperature within –40 °C to +125 °C limits.

How does data retention behave below 1.5 V?

Data retention is not guaranteed below 1.5 V. At VCC = 1.5 V, ICCDR is specified ≤ 5 µA with full data integrity. Below this threshold, retention time decreases exponentially and bit errors may occur unpredictably. For battery-backed applications, system design must ensure VCC remains ≥1.5 V during retention mode - e.g., using a low-dropout supervisor IC to trigger controlled shutdown before crossing the threshold.