Infineon Technologies CY62156ESL-45BVXIT

Overview

CY62156ESL-45BVXIT from Infineon Technologies (formerly Cypress) is a MoBL® 8-Mbit (512 K × 16) CMOS static RAM with 45 ns access time, dual voltage support (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (2 µA typical), and automatic CE power-down mode. It serves as a low-power, high-speed data buffer in portable embedded systems requiring battery longevity and fast random-access storage.

For engineers reviewing the CY62156ESL-45BVXIT datasheet, CY62156ESL-45BVXIT pinout, CY62156ESL-45BVXIT application, or CY62156ESL-45BVXIT equivalent, key selection criteria include its VFBGA-48 package compatibility, byte-enable-controlled 16-bit I/O architecture, industrial temperature range (–40 °C to +85 °C), and dual-voltage operation without level-shifting circuitry.

Technical Context

The CY62156ESL-45BVXIT implements a fully static 512K × 16 RAM array with independent byte enable (BHE/ BLE) control, enabling selective 8-bit writes to upper or lower data bytes. Its dual chip enable (CE1/CE2) logic supports hierarchical memory expansion and automatic power-down when deselected.

It features CMOS-compatible input thresholds, tri-state output control via OE/BHE/ BLE/WE, and guaranteed timing across both voltage ranges - including tAA ≤ 45 ns, tDOE ≤ 22 ns, and tHZOE ≤ 18 ns - ensuring deterministic read latency in real-time microcontroller interfaces.

Key Specifications

Pinout & Package

Package: 48-ball very fine-pitch ball grid array (VFBGA), 6 mm × 8 mm footprint, 0.5 mm ball pitch, JEDEC MO-270 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61WV51216BLL-10MLI and AS6C4008-55ZIN, the CY62156ESL-45BVXIT uniquely balances sub-3 µA standby, 45 ns performance, and dual-voltage flexibility - making it optimal for battery-constrained, mixed-rail portable designs where thermal headroom is limited to 85 °C.

Availability

CY62156ESL-45BVXIT is available at Aetrix Electronics and suitable for portable medical sensors, industrial HMI controllers, automotive infotainment head units, and smart meter data buffers requiring stable component supply across extended product lifecycles.

Supply support for CY62156ESL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and memory solutions for industrial, automotive, and IoT applications.

This device belongs to Infineon's MoBL® (More Battery Life) SRAM portfolio, engineered specifically for ultra-low-power portable electronics where extended battery runtime and rapid wake-from-standby response are critical design requirements.

FAQ

What is the minimum VCC required to retain data in CY62156ESL-45BVXIT?

The device guarantees data retention down to VCC = 1.5 V, with ICCDR ≤ 5 µA at that voltage. This enables integration with supercapacitor or lithium-thionyl chloride backup sources. Retention mode activates automatically when CE1 is HIGH or CE2 is LOW, and no clock or address toggling is required during retention.

Can CY62156ESL-45BVXIT operate reliably at 3.3 V despite the datasheet specifying 2.2–3.6 V and 4.5–5.5 V ranges?

Yes - 3.3 V falls within the 2.2–3.6 V operating range and is fully characterized. All AC/DC parameters, including 45 ns access time and 2 µA standby current, are guaranteed at 3.3 V and –40 °C to +85 °C. The gap between 3.6 V and 4.5 V is explicitly excluded from specifications per datasheet Note 2.

How does the dual CE (CE1/CE2) architecture improve memory system design?

CE1 (active-low) and CE2 (active-high) allow hierarchical memory mapping: CE2 can serve as bank select while CE1 acts as per-chip enable, simplifying decoding logic for multi-SRAM systems. This reduces gate count in FPGA-based controllers and eliminates need for external inverters in 3.3 V systems where CE2 may be tied to VCC.

Is the VFBGA-48 package of CY62156ESL-45BVXIT compatible with standard reflow profiles?

Yes - the package complies with JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak 260 °C, 60-second duration above 217 °C). Board layout guidelines recommend thermal vias under the exposed die pad and symmetric solder mask defined pads to ensure coplanarity and void-free joints.