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Infineon Technologies CY62157CV33LL-70BAXA

Part No.:
CY62157CV33LL-70BAXA
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCY62157CV33LL-70BAXA.pdf
Description:
IC SRAM 8MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,172

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Product details

Overview

CY62157CV33LL-70BAXA from Cypress Semiconductor is a 512K × 16-bit CMOS static RAM with 3.0V–3.6V supply range, 70 ns access time, and ultra-low active current (1.5 mA @ 1 MHz). It features automatic CE power-down (ISB2 ≤ 30 µA), byte-level write control via BHE/BLE, and operates across –40°C to +85°C for automotive-A applications. Used in battery-powered portable systems requiring fast, low-power data buffering.

For engineers reviewing the CY62157CV33LL-70BAXA datasheet, CY62157CV33LL-70BAXA pinout, CY62157CV33LL-70BAXA application, or CY62157CV33LL-70BAXA equivalent, key selection criteria include VCC range compatibility, FBGA-48 thermal performance (ΘJA = 55 °C/W), standby current under CE/OE/BHE/BLE control, and timing margins for 70 ns read/write cycles in embedded memory subsystems.

Technical Context

This SRAM implements dual chip enable logic (CE1 active-low, CE2 active-high) and independent byte enables (BHE/BLE) to support 8-bit sub-word writes without bus contention. Its power-down circuitry reduces ICC by >99% when deselected-triggered by CE1 HIGH, CE2 LOW, or both BHE and BLE HIGH.

The device uses CMOS architecture with input/output capacitance of 6 pF (CIN) and 8 pF (COUT), supports TTL-compatible inputs (VIH = 2.2 V, VIL = 0.8 V), and guarantees tRC = 70 ns at VCC = 3.6 V with 30-pF load and 1 V/ns edge rates per AC test conditions.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 512K × 16 bits = 8 Mbit total capacity; supports 16-bit parallel data interface with full address decoding up to A18.
Access Time (tRC) 70 ns maximum; defines minimum cycle time for reliable read/write operations at full speed.
VCC Range 3.0 V to 3.6 V; ensures compatibility with 3.3 V system rails while allowing margin for transient droop.
Active Current (ICC) 5.5 mA typical at fmax; enables low-power operation in portable devices with burst-mode memory access.
Standby Current (ISB2) 10 µA typical, 30 µA max at VCC = 3.6 V; achieved when CE1 HIGH/CE2 LOW or both BHE/BLE HIGH.
Operating Temperature –40°C to +85°C (Automotive-A grade); qualified for under-hood and infotainment ECUs with extended thermal cycling.
Package 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch); supports high-density PCB layouts and automated SMT assembly.

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), top view, RoHS-compliant, with NC pins at E3 (DNU) and A18 positions.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Inputs 19-bit address bus supporting 512K-word addressing; A0 least significant, A18 most significant.
I/O0–I/O15 Bidirectional Data Lines 16-bit data path; high-impedance during deselect, OE HIGH, or write cycles; split into low/high bytes by BLE/BHE.
WE Write Enable (Active LOW) Controls write initiation; LOW with CE1 LOW/CE2 HIGH enables data latching into memory array.
CE1 Chip Enable 1 (Active LOW) Primary chip select; HIGH forces automatic power-down and I/O high-Z regardless of other controls.
CE2 Chip Enable 2 (Active HIGH) Secondary enable; LOW disables device and triggers power-down; must be HIGH for any active operation.
OE Output Enable (Active LOW) Enables output drivers; HIGH places I/O pins in high-impedance state even if CE1/CE2 are active.
BLE Byte Low Enable (Active LOW) Selects I/O0–I/O7 for read/write; allows 8-bit access without affecting upper byte.
BHE Byte High Enable (Active LOW) Selects I/O8–I/O15 for read/write; enables independent 8-bit access to upper data byte.
VCC Power Supply 3.0–3.6 V core supply; decoupling required near package for stable 70 ns timing compliance.
VSS Ground Reference ground for all signals and internal logic; multiple VSS balls ensure low-impedance return path.

Key Features

Feature Design Value
Ultra-low active current 1.5 mA typical at 1 MHz enables >10× longer battery life in MoBL™-targeted portable systems.
Automatic CE power-down Reduces ICC by >99% when CE1 HIGH or CE2 LOW-no external control logic needed for sleep mode.
Independent byte write control BLE/BHE allow simultaneous or separate 8-bit writes to lower/upper data bytes, eliminating bus turnaround delays.
CMOS-compatible timing tLZOE = 5 ns and tHZOE = 25 ns ensure clean bus release and minimal hold-time conflicts in multiplexed systems.
Automotive-A qualification Validated for –40°C to +85°C operation with full electrical specs guaranteed-suitable for non-safety-critical vehicle ECUs.

Applications

Portable Medical Monitor Automotive Infotainment Head Unit

Use Scenario: Real-time waveform buffering in handheld ECG devices with intermittent wireless upload.

IC Role / Device Role / Timing Role: High-speed, low-leakage SRAM for temporary storage of sampled analog data prior to compression and transmission.

Use Value: 1.5 mA active current extends single-charge battery life beyond 8 hours; 70 ns access enables sampling at ≥10 kSPS without CPU wait states.

Use Scenario: UI frame buffer and audio metadata cache in head units with dual-display graphics pipelines.

IC Role / Device Role / Timing Role: Parallel-access memory for rapid pixel/data fetch between GPU and DSP subsystems.

Use Value: Byte-enable capability allows independent updates to display and audio buffers without full 16-bit bus arbitration overhead.

Industrial PLC HMI Module Avionics Display Controller

Use Scenario: Local configuration storage and real-time I/O status mirroring in compact programmable logic controller interfaces.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding runtime register maps and alarm history with deterministic access latency.

Use Value: Guaranteed 70 ns tRC at –40°C ensures deterministic response in safety-critical scan cycles; ISB2 ≤ 30 µA minimizes thermal load in sealed enclosures.

Use Scenario: Graphics overlay buffer in certified cockpit displays requiring DO-254-compliant memory subsystems.

IC Role / Device Role / Timing Role: Deterministic-access SRAM for rendering pipeline staging with strict jitter-free timing.

Use Value: FBGA-48 package provides mechanical stability under vibration; automotive-A temp grade satisfies extended avionics environmental screening requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV51216BLL-70BLI Same 512K × 16 organization, 70 ns access, but 2.5–3.6 V VCC range and 10 µA ISB2 (typ) at 3.3 V. Broader voltage range suits mixed-rail designs; slightly higher leakage at 3.6 V may affect long-term battery retention. Prefer for systems with 2.5 V auxiliary rails or where wider VCC margin outweighs Cypress's automotive qualification rigor.
Renesas R1LV51216ASB-70SI Identical 70 ns tRC and FBGA-48 package, but rated only for industrial (–40°C to +85°C) not automotive-A; ISB2 = 15 µA typ. Lacks AEC-Q100 stress validation; suitable for commercial-grade avionics or industrial HMIs where automotive certification is not mandated. Choose when cost sensitivity outweighs automotive qualification needs and thermal derating is managed externally.

Compared with IS62WV51216BLL-70BLI and R1LV51216ASB-70SI, CY62157CV33LL-70BAXA delivers tighter ISB2 control (≤30 µA max) and formal automotive-A qualification-critical for ECUs requiring guaranteed low-power behavior over full temperature range without design margin penalties.

Availability

CY62157CV33LL-70BAXA is available at Aetrix Electronics and suitable for portable medical monitors, automotive infotainment head units, and industrial PLC HMI modules requiring stable component supply with guaranteed automotive-A temperature performance and low-power memory buffering.

Supply support for CY62157CV33LL-70BAXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for automotive, industrial, and consumer electronics with emphasis on low-power innovation.

CY62157CV33 belongs to the MoBL™ (More Battery Life) SRAM product line, engineered specifically for portable and battery-constrained systems needing fast, deterministic access with sub-mA active current and nanosecond-level standby recovery.

FAQ

What is the maximum clock frequency supported by CY62157CV33LL-70BAXA?

CY62157CV33LL-70BAXA does not use a clock signal-it is an asynchronous SRAM. Its maximum operational speed is defined by access time: tRC = 70 ns, corresponding to a maximum effective cycle rate of ~14.3 MHz. Timing depends on address, CE, OE, and WE signal transitions-not a system clock.

Can CY62157CV33LL-70BAXA operate at 2.8 V?

No. The CY62157CV33 variant requires VCC between 3.0 V and 3.6 V per datasheet specifications. Operation below 3.0 V violates absolute maximum ratings and risks timing failure, data corruption, or increased standby leakage. Use CY62157CV30 for 2.7–3.3 V operation.

How does automatic power-down activate, and what pins control it?

Automatic power-down activates when CE1 is HIGH or CE2 is LOW-regardless of OE, WE, BHE, or BLE states. This forces ICC to ≤30 µA (ISB2 max) and places all I/Os in high-impedance. No additional control logic is needed; the feature is hardwired into the device's power management circuitry.

Is the FBGA-48 package lead-free, and what is its moisture sensitivity level?

Yes, CY62157CV33LL-70BAXA is Pb-free and RoHS-compliant. Its FBGA-48 package has Moisture Sensitivity Level (MSL) 3 per J-STD-020, requiring floor life of 168 hours at ≤30°C/60% RH before reflow. Baking per IPC/JEDEC standards is required if exposed beyond that limit.

CY62157CV33LL-70BAXA Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
8Mbit
Memory Organization:
512K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x10)

CY62157CV33LL-70BAXA FAQ

1.How can I place an order for CY62157CV33LL-70BAXA through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62157CV33LL-70BAXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62157CV33LL-70BAXA reliable?

The price and inventory of CY62157CV33LL-70BAXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157CV33LL-70BAXA is usually 5 days.

3.What payment methods are accepted for CY62157CV33LL-70BAXA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157CV33LL-70BAXA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62157CV33LL-70BAXA?

CY62157CV33LL-70BAXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62157CV33LL-70BAXA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62157CV33LL-70BAXA?

For technical support, including CY62157CV33LL-70BAXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157CV33LL-70BAXA requirements.

6.How does Aetrix verify that CY62157CV33LL-70BAXA is sourced from the original manufacturer or authorized distributors?

All CY62157CV33LL-70BAXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157CV33LL-70BAXA meets industry standards.

7.What is the process for return or replacement of CY62157CV33LL-70BAXA?

All CY62157CV33LL-70BAXA units undergo pre-shipment inspection (PSI). If there is an issue with CY62157CV33LL-70BAXA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62157CV33LL-70BAXA part is unused and in its original packaging.

Return procedure for CY62157CV33LL-70BAXA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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