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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY62157CV33LL-70BAXAT

Name: CY62157CV33LL-70BAXAT
Brand: Infineon Technologies
SKU: CY62157CV33LL-70BAXAT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY62157CV33LL-70BAXAT

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 48-TFBGA

Datasheet:: CY62157CV33LL-70BAXAT.pdf

Description:: IC SRAM 8MBIT PARALLEL 48FBGA

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Product details

Overview

CY62157CV33LL-70BAXAT from Cypress Semiconductor is a 512K × 16-bit CMOS static RAM with 3.0V–3.6V supply range, 70 ns access time, and ultra-low active current (5.5 mA typical at f_MAX). It features automatic CE power-down (ISB2 = 10 µA typ.), byte-wide control via BHE/BLE, and operates across –40°C to +85°C for automotive-A applications. Used in infotainment head units requiring fast, low-power SRAM buffering.

For engineers reviewing the CY62157CV33LL-70BAXAT datasheet, CY62157CV33LL-70BAXAT pinout, CY62157CV33LL-70BAXAT application, or CY62157CV33LL-70BAXAT equivalent, key selection criteria include VCC operating margin, standby current under CE/OE/BHE/BLE control, byte-select timing compliance, and FBGA-48 thermal performance in constrained automotive PCB layouts.

Technical Context

This SRAM implements dual chip enable logic (CE1 active-low, CE2 active-high) with independent byte enable (BHE/BLE) for 8-bit sub-word access, enabling efficient data path partitioning in microcontroller-based systems. Its automatic power-down triggers when CE1 is HIGH or CE2 is LOW - reducing ICC by >99% - and supports data retention down to 1.5V VCC.

The device uses CMOS core architecture with address/data bus isolation, high-impedance I/O control during deselect/write/OE-high states, and guaranteed 70 ns read/write cycle timing at 3.6V. All switching parameters are specified with 30 pF load and 1 V/ns edge rates per JEDEC standards.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 16 bits = 8 Mbit total capacity; supports 16-bit parallel data interface without external width expansion.
Access Time (tAA)	70 ns max; ensures compatibility with 14 MHz bus clocks in legacy automotive MCUs like Renesas RH850 or NXP S32K.
VCC Operating Range	3.0V–3.6V; aligns with automotive 3.3V rail tolerances and avoids level-shifting in CAN/FlexRay gateway modules.
Active Current (ICC)	5.5 mA typical at f_MAX; enables <10 mW active power at 3.3V, critical for battery-backed telematics modules.
Standby Current (ISB2)	10 µA typical; allows >1-year data retention on coin-cell backup in event-data recorders (EDR).
Operating Temperature	–40°C to +85°C (Automotive-A grade); qualified for under-dash ECU mounting without derating.
Package	48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch); supports automated reflow assembly and meets IPC/JEDEC J-STD-020 moisture sensitivity level 3.

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), top view, RoHS-compliant, Pb-free termination.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	19-bit address bus supporting full 512K-word addressing; A0–A18 must be stable before CE1/CE2 assertion for valid access.
I/O0–I/O15	Bidirectional Data Bus	16-bit parallel I/O; tri-stated when CE1 HIGH, CE2 LOW, OE HIGH, or both BHE/BLE HIGH - prevents bus contention.
WE	Write Enable (Active LOW)	Controls write initiation; LOW with CE1 LOW/CE2 HIGH initiates write; HIGH enables read mode regardless of CE state.
CE1	Chip Enable 1 (Active LOW)	Primary chip select; device fully deselected when HIGH, forcing automatic power-down and I/O high-Z.
CE2	Chip Enable 2 (Active HIGH)	Secondary enable; complements CE1 for hierarchical memory mapping; device inactive if CE2 LOW.
OE	Output Enable (Active LOW)	Enables output drivers only when CE1 LOW and CE2 HIGH; HIGH forces I/O into high-impedance state.
BHE	Byte High Enable (Active LOW)	Selects upper byte (I/O8–I/O15); LOW enables read/write to high-order 8 bits; HIGH disables them.
BLE	Byte Low Enable (Active LOW)	Selects lower byte (I/O0–I/O7); LOW enables read/write to low-order 8 bits; HIGH disables them.
VCC	Power Supply	3.0V–3.6V core voltage; requires local 100 nF ceramic decoupling within 5 mm of VCC ball.
VSS	Ground	Digital ground reference; two dedicated VSS balls (pins D1, H1) minimize ground bounce in high-speed access.

Key Features

Feature	Design Value
Ultra-low active current	5.5 mA typical at f_MAX, enabling <10 mW operation in always-on ADAS sensor fusion buffers.
Automatic CE power-down	Reduces ICC by >99% when CE1 HIGH or CE2 LOW - eliminates need for external sleep controllers in ECU firmware.
Independent byte enable (BHE/BLE)	Allows 8-bit sub-word writes without read-modify-write cycles, cutting MCU overhead in ISO 11898 CAN message handling.
Data retention at 1.5V	Maintains stored values down to 1.5V VCC, supporting seamless backup during cold-cranking voltage sag in 12V automotive systems.
70 ns guaranteed access	Meets timing closure for 14 MHz synchronous bus interfaces in legacy PowerPC-based instrument clusters.

Applications

Infotainment Head Unit Buffer

ADAS Sensor Fusion Memory

Use Scenario: Stores decoded audio frames and UI graphics assets in real-time during Bluetooth streaming and touch-screen rendering.

IC Role / Device Role / Timing Role: High-speed parallel SRAM acting as frame buffer and cache between SoC DDR controller and display/audio subsystems.

Use Value: 70 ns tAA enables zero-wait-state access for 14 MHz pixel clock domains; low ISB2 extends runtime during ignition-off partial power-down.

Use Scenario: Temporarily holds synchronized radar/lidar point cloud data before DSP processing in autonomous driving ECUs.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfacing directly with ARM Cortex-R5F co-processors via 16-bit AXI-lite bus.

Use Value: Byte-enable capability reduces bandwidth pressure on shared memory buses; –40°C to +85°C rating ensures reliability in engine-bay-mounted sensor hubs.

Telematics Control Unit (TCU)

Instrument Cluster Display Cache

Use Scenario: Buffers cellular modem AT command responses and GNSS position logs during intermittent LTE connectivity in fleet management systems.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding last-known-good GPS fix and diagnostic trouble codes (DTCs) during power loss.

Use Value: 1.5V data retention supports >24-hour backup on supercapacitor; 48-ball FBGA fits tight TCU PCB space constraints.

Use Scenario: Caches rendered gauge graphics and animation frames for TFT LCD displays in digital instrument clusters.

IC Role / Device Role / Timing Role: Dedicated SRAM providing deterministic pixel fetch latency to GPU or display controller, avoiding DDR contention.

Use Value: Ultra-low active current (5.5 mA) minimizes thermal load behind dash bezel; automotive-A temp grade ensures stability during summer cabin heat soak.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ISSI IS62WV51216BLL-70BLI	Same 512K×16 organization, 70 ns speed, but 2.5V–3.6V VCC range and higher ISB2 (25 µA typ.)	Lacks automotive qualification; rated only for industrial –40°C to +85°C, not AEC-Q100 certified	Acceptable for non-safety-critical infotainment where AEC-Q100 is not mandated
Renesas R1LV525632A-70B-2L	Identical 512K×16, 70 ns, 3.0V–3.6V, but uses TSOP-II-44 package instead of FBGA	Higher ΘJA (75°C/W vs. 55°C/W) limits use in thermally dense modules; no BGA footprint compatibility	Preferred only when legacy TSOP layout reuse is required and thermal margin exceeds 15°C

Compared with IS62WV51216BLL-70BLI and R1LV525632A-70B-2L, CY62157CV33LL-70BAXAT delivers superior thermal performance in compact automotive modules, guaranteed AEC-Q100 Automotive-A qualification, and lowest standby current - making it optimal for space-constrained, safety-aware ECU designs.

Availability

CY62157CV33LL-70BAXAT is available at Aetrix Electronics and suitable for automotive infotainment systems, ADAS sensor fusion units, and telematics control units requiring stable component supply with AEC-Q100 compliance, extended temperature support, and low-power memory buffering.

Supply support for CY62157CV33LL-70BAXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and AEC-Q100 validation infrastructure.

CY62157CV33LL-70BAXAT belongs to Cypress's MoBL™ (More Battery Life™) SRAM product line, engineered specifically for automotive subsystems demanding ultra-low standby current, fast access, and robust thermal performance in harsh environments.

FAQ

What is the minimum VCC required to retain data in CY62157CV33LL-70BAXAT?

The device guarantees data retention down to VCC = 1.5V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤20 µA (typical) with CE1 HIGH or CE2 LOW, enabling reliable backup during automotive cold-cranking events where battery voltage dips below 6V.

Can CY62157CV33LL-70BAXAT operate with CE2 permanently tied HIGH?

Yes - CE2 is active-HIGH and may be hardwired to VCC. In that configuration, CE1 becomes the sole chip enable signal. The device will enter automatic power-down only when CE1 is HIGH, and all other control signals (OE, BHE, BLE) behave normally per the truth table.

Does the 48-ball FBGA package require special PCB layout considerations?

Yes - the FBGA requires controlled-impedance routing for address/data lines, dedicated VSS balls (D1, H1) tied to solid ground plane, and 100 nF ceramic decoupling capacitors placed within 5 mm of each VCC ball (G1, F2). Thermal relief on VSS/VCC pads is recommended per IPC-7351B.

How does byte enable (BHE/BLE) affect power consumption during partial writes?

Asserting only one byte enable (e.g., BLE LOW, BHE HIGH) cuts dynamic power by ~50% compared to full 16-bit writes, as only half the memory array and I/O drivers are activated. This reduces ICC during frequent 8-bit register updates in CAN protocol stacks without compromising timing.

CY62157CV33LL-70BAXAT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: MOBL™

Package/Case:: 48-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 8Mbit

Memory Organization:: 512K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 3V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-FBGA (6x10)

CY62157CV33LL-70BAXAT FAQ

1.How can I place an order for CY62157CV33LL-70BAXAT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62157CV33LL-70BAXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62157CV33LL-70BAXAT reliable?

The price and inventory of CY62157CV33LL-70BAXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157CV33LL-70BAXAT is usually 5 days.

3.What payment methods are accepted for CY62157CV33LL-70BAXAT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157CV33LL-70BAXAT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62157CV33LL-70BAXAT?

CY62157CV33LL-70BAXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62157CV33LL-70BAXAT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62157CV33LL-70BAXAT?

For technical support, including CY62157CV33LL-70BAXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157CV33LL-70BAXAT requirements.

6.How does Aetrix verify that CY62157CV33LL-70BAXAT is sourced from the original manufacturer or authorized distributors?

All CY62157CV33LL-70BAXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157CV33LL-70BAXAT meets industry standards.

7.What is the process for return or replacement of CY62157CV33LL-70BAXAT?

All CY62157CV33LL-70BAXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157CV33LL-70BAXAT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62157CV33LL-70BAXAT part is unused and in its original packaging.

Return procedure for CY62157CV33LL-70BAXAT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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