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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY62157DV30L-55BVXE

Name: CY62157DV30L-55BVXE
Brand: Infineon Technologies
SKU: CY62157DV30L-55BVXE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY62157DV30L-55BVXE

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 48-VFBGA

Datasheet:: CY62157DV30L-55BVXE.pdf

Description:: IC SRAM 8MBIT PARALLEL 48VFBGA

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Product details

Overview

CY62157DV30L-55BVXE from Cypress Semiconductor is an 8-Mbit (512K × 16) MoBL® CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). Packaged in 48-ball FBGA, it delivers ultra-low active current (1.5 mA @ 1 MHz) and standby current (2 µA typical), enabling extended battery life in portable telecom and embedded systems.

For engineers reviewing the CY62157DV30L-55BVXE datasheet, CY62157DV30L-55BVXE pinout, CY62157DV30L-55BVXE application, or CY62157DV30L-55BVXE equivalent, key selection criteria include its dual chip enable (CE1/CE2), byte-level write control (BHE/BLE), automatic power-down on deselect, and compatibility with 45/55/70 ns speed grades across FBGA, TSOPII, and TSOPI packages.

Technical Context

This SRAM implements a high-speed, low-power 512K × 16 asynchronous architecture with independent byte enables for true 16-bit data bus flexibility. Its dual CE architecture (CE1 active-low, CE2 active-high) enables seamless memory expansion and hierarchical decoding without external logic.

The device supports three distinct power states: active (CE1 LOW & CE2 HIGH), standby (CE1 HIGH or CE2 LOW), and data retention (V_CC ≥ 1.5 V). Output drivers enter high-impedance during deselect, OE HIGH, BHE/BLE HIGH, or write cycles-ensuring clean bus sharing in multi-device systems.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K words × 16 bits - provides 1 MB of fast, non-volatile-critical storage for firmware buffers and real-time data tables.
Access Time (t_RC)	55 ns - ensures reliable interface timing with 18 MHz microcontrollers and DSPs without wait states.
V_CC Range	2.20 V to 3.60 V - supports direct connection to Li-ion battery rails (2.7–3.6 V) and 2.5 V/3.3 V system domains.
I_CC (Active)	1.5 mA typical @ 1 MHz - reduces average power draw in burst-access applications like modem baseband processing.
I_SB2 (Standby)	2 µA typical - extends shelf life and runtime in always-on IoT edge nodes during sleep intervals.
Data Retention V_CC	1.5 V minimum - allows graceful low-power hibernation during brown-out conditions without data loss.
Operating Temperature	–40°C to +85°C - qualified for industrial-grade deployment in automotive infotainment head units and factory HMIs.

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	19-bit address bus supporting full 512K-word addressing; A19 unused in 512K×16 mode.
I/O0–I/O15	Bidirectional Data Bus	16-bit parallel interface; high-impedance when deselected, OE HIGH, or during write.
CE1, CE2	Chip Enable Controls	CE1 active-low + CE2 active-high enables hierarchical decode; either signal HIGH/LOW forces standby.
OE	Output Enable	Active-low read gate; output drivers disabled (high-Z) when OE HIGH, preventing bus contention.
WE	Write Enable	Active-low write strobe; initiates write only when CE1/CE2 active and BHE/BLE asserted.
BHE, BLE	Byte Enable Controls	Independent high/low byte write masking; enables 8-bit sub-word writes without external glue logic.
V_CC, V_SS	Power Supply	Dual V_CC/V_SS pairs reduce simultaneous switching noise; decoupling required per ball group.
NC, DNU	No Connect / Do Not Use	NC pins unconnected internally; DNU pins must float-tying them may cause functional failure.

Key Features

Feature	Design Value
MoBL® Ultra-Low Power Architecture	1.5 mA active current at 1 MHz enables >10× longer battery life vs. legacy 5V SRAMs in handheld devices.
Dual Chip Enable (CE1/CE2)	Enables 32× memory expansion using standard address decoding-no external logic needed for bank selection.
Independent Byte Enables (BHE/BLE)	Supports mixed 8-bit/16-bit peripheral interfacing (e.g., 8-bit MCU + 16-bit display buffer) on single data bus.
Automatic Power-Down	Enters <2 µA standby automatically when CE1 HIGH or CE2 LOW-eliminates software-controlled sleep sequencing.
Pb-Free FBGA Packaging	48-ball FBGA meets IPC/JEDEC J-STD-020C reflow profiles and supports automated optical inspection (AOI).

Applications

Cellular Baseband Processing

Automotive Infotainment Display Buffer

Use Scenario: Storing real-time audio codec coefficients and packet buffers in 3G/4G LTE modems.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state data exchange between DSP core and RF transceiver.

Use Value: 55 ns t_RC and 1.5 mA active current enable continuous voice call operation for >48 hours on single-cell Li-ion battery.

Use Scenario: Holding frame buffers for TFT LCD graphics rendering in vehicle head units.

IC Role / Device Role / Timing Role: High-reliability 16-bit memory backing GPU framebuffer with byte-select write capability.

Use Value: BHE/BLE support allows partial screen updates without full-frame rewrite-reducing GPU bandwidth by 40%.

Industrial PLC I/O Mapping Table

Medical Portable Monitor Data Log

Use Scenario: Caching sensor input/output mapping tables and ladder logic state variables in DIN-rail controllers.

IC Role / Device Role / Timing Role: Non-volatile-critical scratchpad memory accessed by ARM Cortex-M4 at 100 kHz polling rate.

Use Value: –40°C to +85°C rating and 2 µA standby ensure deterministic operation during thermal cycling in factory environments.

Use Scenario: Temporarily storing ECG waveform samples before SD card transfer in handheld patient monitors.

IC Role / Device Role / Timing Role: Low-noise, low-power buffer isolating analog front-end from digital subsystem during acquisition bursts.

Use Value: 1.5 V data retention threshold allows safe suspend-to-RAM during battery swap without data corruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY62157DV30LL-55BVXE	Lower max standby current (8 µA vs. 20 µA) and reduced active current spread (12 mA max vs. 20 mA); same speed/package.	Targeted specifically for automotive-A grade (–40°C to +85°C) with tighter ISB2 spec; identical pinout and timing.	Select when automotive qualification and guaranteed sub-10 µA standby are mandatory-no hardware change required.
IS61LV51216AL-55TLI	55 ns access, 2.5–3.6 V supply, 12 mA max I_CC, but no dual CE or byte enables; uses single CE and no BHE/BLE.	Lacks hierarchical decode and byte masking-requires external logic for 16-bit partial writes or multi-bank expansion.	Choose only if cost sensitivity outweighs feature needs and system design can accommodate simplified control interface.

Compared with CY62157DV30LL-55BVXE, this part trades guaranteed low-ISB2 for broader industrial qualification; versus IS61LV51216AL-55TLI, it adds critical flexibility in memory expansion and byte-level access at minimal cost premium.

Availability

CY62157DV30L-55BVXE is available at Aetrix Electronics and suitable for cellular modem design, automotive display subsystems, and industrial PLC data caching requiring stable component supply across extended product lifecycles.

Supply support for CY62157DV30L-55BVXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, emphasizing low-power innovation and automotive-grade reliability.

This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and battery-constrained applications where microamp-level standby current and sub-60 ns access are essential.

FAQ

What is the maximum clock frequency supported by CY62157DV30L-55BVXE?

CY62157DV30L-55BVXE is an asynchronous SRAM and does not use a clock signal. Its maximum operational speed is defined by access time: 55 ns cycle time supports effective interface rates up to ~18 MHz for read/write operations. Timing compliance depends on proper setup/hold margins relative to CE, OE, WE, and address transitions-not a system clock.

Can CY62157DV30L-55BVXE operate at 2.5 V supply?

Yes. The device is fully specified over 2.20 V to 3.60 V, including 2.5 V. At 2.5 V, all AC and DC parameters-including 55 ns t_RC, 1.5 mA typical I_CC, and 2 µA typical I_SB2-remain valid per the datasheet's operating range table and electrical characteristics section.

How does the automatic power-down feature activate?

Automatic power-down activates when CE1 is HIGH or CE2 is LOW (or both), regardless of OE or WE state. In this condition, internal circuitry shuts down array drivers and precharge circuits, reducing I_SB2 to 2 µA typical. No command or register write is needed-the transition is purely hardware-driven by CE pin levels.

Is the 48-ball FBGA package lead-free and RoHS compliant?

Yes. The "VXE" suffix in CY62157DV30L-55BVXE explicitly denotes a Pb-free, RoHS-compliant 48-ball FBGA package. It meets JEDEC J-STD-020C reflow requirements and carries full material declarations per EU RoHS Directive 2011/65/EU Annex II.

CY62157DV30L-55BVXE Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: MOBL™

Package/Case:: 48-VFBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 8Mbit

Memory Organization:: 512K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 55ns

Access Time:: 55 ns

Voltage - Supply:: 2.2V ~ 3.6V

Operating Temperature:: -40°C ~ 125°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-VFBGA (6x8)

CY62157DV30L-55BVXE FAQ

1.How can I place an order for CY62157DV30L-55BVXE through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62157DV30L-55BVXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62157DV30L-55BVXE reliable?

The price and inventory of CY62157DV30L-55BVXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157DV30L-55BVXE is usually 5 days.

3.What payment methods are accepted for CY62157DV30L-55BVXE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157DV30L-55BVXE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62157DV30L-55BVXE?

CY62157DV30L-55BVXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62157DV30L-55BVXE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62157DV30L-55BVXE?

For technical support, including CY62157DV30L-55BVXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157DV30L-55BVXE requirements.

6.How does Aetrix verify that CY62157DV30L-55BVXE is sourced from the original manufacturer or authorized distributors?

All CY62157DV30L-55BVXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157DV30L-55BVXE meets industry standards.

7.What is the process for return or replacement of CY62157DV30L-55BVXE?

All CY62157DV30L-55BVXE units undergo pre-shipment inspection (PSI). If there is an issue with CY62157DV30L-55BVXE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62157DV30L-55BVXE part is unused and in its original packaging.

Return procedure for CY62157DV30L-55BVXE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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