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Infineon Technologies CY62157DV30L-55BVXET
- Part No.:
- CY62157DV30L-55BVXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157DV30L-55BVXET.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,234
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Product details
Overview
CY62157DV30L-55BVXET from Cypress Semiconductor is a 8-Mbit (512K × 16) MoBL® CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature support (–40°C to +85°C). It features ultra-low active current (1.5 mA @ 1 MHz), automatic CE-based power-down, and dual chip enables (CE1/CE2) for flexible memory expansion in portable battery-powered systems.
For engineers reviewing the CY62157DV30L-55BVXET datasheet, CY62157DV30L-55BVXET pinout, CY62157DV30L-55BVXET application, or CY62157DV30L-55BVXET equivalent, this device is selected for low-power embedded SRAM replacement where byte-level control (BHE/BLE), high-impedance I/O management, and stable 16-bit data bus interfacing are required.
Technical Context
The CY62157DV30L-55BVXET implements a full CMOS 512K × 16 asynchronous SRAM architecture with independent byte enable (BHE/BLE) for 8-bit sub-word writes and reads. Its dual CE architecture (CE1 LOW + CE2 HIGH for selection) enables hierarchical memory mapping and seamless bank expansion without external logic.
Power management is handled via automatic power-down when CE1 is HIGH or CE2 is LOW - reducing standby current to 2 µA (typ.) at 3.6 V. All I/Os enter high-impedance state during deselect, OE HIGH, BHE/BLE HIGH, or write cycles, ensuring clean bus sharing in multi-peripheral systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K words × 16 bits - supports 16-bit microcontroller/microprocessor data buses without glue logic. |
| Access Time | 55 ns - guarantees timing margin for 12–18 MHz synchronous bus interfaces with setup/hold compliance. |
| Supply Voltage Range | 2.20 V to 3.60 V - compatible with Li-ion battery discharge profiles and mixed-voltage SoC domains. |
| Active Current (1 MHz) | 1.5 mA (typ.) - enables >100-hour operation on 150 mAh coin cells in intermittent-read applications. |
| Standby Current | 2 µA (typ.) - meets ultra-low-power sleep mode requirements for always-on sensor nodes and RTC buffers. |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded control, automotive body electronics, and medical handhelds. |
| Package | 48-ball FBGA (9 mm × 8 mm, 0.8 mm pitch) - supports high-density PCB layouts with thermal performance ΘJA = 39.3°C/W. |
Pinout & Package
Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 9 mm × 8 mm, 0.8 mm ball pitch, RoHS-compliant lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; A19 unused in 512K×16 mode. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance during deselect, OE HIGH, or write cycles. |
| CE1, CE2 | Chip Enable Inputs | Active-LOW CE1 + active-HIGH CE2 enable read/write; either signal HIGH disables device and triggers auto power-down. |
| OE | Output Enable | Active-LOW control of output drivers; HIGH forces I/Os into high-Z regardless of CE state. |
| WE | Write Enable | Active-LOW signal initiating write cycle; latches data when CE1/CE2 active and BHE/BLE asserted. |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write masking: BLE LOW writes I/O0–I/O7; BHE LOW writes I/O8–I/O15. |
| VCC, VSS | Power Supply | Dual power pins (VCC on Ball E3, VSS on Balls D1/D2) reduce IR drop and improve noise immunity. |
| NC, DNU | No Connect / Do Not Use | NC pins (e.g., Ball C1) unconnected internally; DNU pins (e.g., Ball F1) must float - no tie-high/low. |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 1.5 mA active current @ 1 MHz and 2 µA standby current enable battery life extension in portable instrumentation. |
| Dual Chip Enable (CE1/CE2) Logic | Enables hierarchical memory banking and eliminates need for external address decoders in multi-SRAM systems. |
| Independent Byte Enables (BHE/BLE) | Allows partial-word writes without read-modify-write cycles - critical for efficient firmware update and buffer management. |
| Automatic Power-Down on Deselect | Reduces system-level quiescent power by >99% when memory is idle, with zero software overhead or configuration. |
| High-Impedance Output Control | I/Os enter high-Z on CE/OE/BHE/BLE deassertion or during writes - prevents bus contention in shared-data-path designs. |
Applications
| Portable Medical Devices | Industrial PLC I/O Modules |
|---|---|
|
Use Scenario: Real-time waveform buffering in handheld ECG monitors with intermittent wireless transmission. IC Role / Device Role / Timing Role: Asynchronous 16-bit SRAM storing 10-second raw ADC samples before BLE upload; operates at 3.3 V from single LiPo cell. Use Value: 55 ns access ensures sample capture at ≥20 kSPS without DMA stalls; 2 µA standby extends battery runtime beyond 72 hours. |
Use Scenario: Configuration storage and real-time tag caching in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding ladder logic state variables and I/O mapping tables; accessed by ARM Cortex-M7 core. Use Value: Dual CE inputs allow hot-swappable module detection; BHE/BLE support enables atomic 8-bit register updates without bus locking. |
| Automotive Body Control Units | Wireless Sensor Gateways |
|
Use Scenario: Door module firmware overlay and diagnostic log storage in CAN-connected vehicle subsystems. IC Role / Device Role / Timing Role: External code/data RAM for Infineon AURIX TC3xx MCU; withstands –40°C to +85°C ambient per ISO 16750-4. Use Value: 2.2–3.6 V operation tolerates battery transients; FBGA package resists vibration-induced solder fatigue better than TSOP. |
Use Scenario: Edge preprocessing buffer aggregating LoRaWAN sensor payloads before cloud uplink in smart agriculture gateways. IC Role / Device Role / Timing Role: Temporary packet staging memory between SX1276 radio and ESP32 host; managed via GPIO-controlled CE/OE. Use Value: Automatic power-down cuts idle power to <1 µW; 48-ball FBGA allows compact 2-layer PCB layout with minimal routing congestion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-55NLI | Same 512K×16 organization, 55 ns speed, but only single CE and no BHE/BLE; standby current 10 µA (typ.) - 5× higher. | Lacks byte-enable granularity and dual-CE flexibility; suitable only for simple 16-bit bus systems without partial writes. | Select when cost sensitivity outweighs byte-control needs and board space permits larger TSOPII footprint. |
| ON Semiconductor NVSRAM NB16L51216C-55ZI | Nonvolatile SRAM with integrated EEPROM backup; 55 ns access but 25 mA active current and 3.3 V only; no automotive temp grade. | Provides data retention during power loss but sacrifices MoBL® low-power advantage; requires backup capacitor management. | Choose only when persistent storage across power cycles is mandatory and battery life is secondary. |
Compared with IS62WV51216BLL-55NLI and NB16L51216C-55ZI, the CY62157DV30L-55BVXET uniquely delivers byte-selectable writes, dual-CE expandability, and sub-µA standby - making it optimal for energy-constrained, modular embedded systems requiring deterministic memory access and long-term reliability.
Availability
CY62157DV30L-55BVXET is available at Aetrix Electronics and suitable for portable medical devices, industrial PLC I/O modules, automotive body control units, and wireless sensor gateways requiring stable component supply across extended product lifecycles.
Supply support for CY62157DV30L-55BVXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics.
This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable and battery-operated embedded systems requiring fast, reliable, and voltage-flexible memory.
FAQ
What is the minimum VCC required to retain data in CY62157DV30L-55BVXET?
Data retention is guaranteed down to VCC = 1.5 V, with typical retention current of 10 µA at that voltage. The device enters data retention mode automatically when CE1 is HIGH or CE2 is LOW, and maintains stored contents without clock or external refresh - essential for brown-out recovery in portable systems.
Can CY62157DV30L-55BVXET be used in a 1M × 8 configuration?
No - this specific variant (CY62157DV30L-55BVXET) is factory-configured and characterized for 512K × 16 operation only. The 1M × 8 mode requires the CY62158DV30 device and different pin assignments (e.g., A19 on Pin 45), which are not supported in this FBGA package variant.
How does the dual CE architecture improve system design?
CE1 (active-LOW) and CE2 (active-HIGH) allow three-state enable logic: device activates only when CE1 = LOW and CE2 = HIGH. This enables direct connection to FPGA/ASIC address decoders without inverters, simplifies memory banking, and supports automatic power-down if either CE signal changes - reducing firmware complexity and leakage paths.
Is the 48-ball FBGA package compatible with standard reflow profiles?
Yes - the CY62157DV30L-55BVXET uses a Pb-free, RoHS-compliant FBGA package qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3. Standard lead-free reflow profiles (peak 260°C, 60–90 sec above 217°C) are fully supported, with thermal resistance ΘJA = 39.3°C/W on a 4-layer PCB.
CY62157DV30L-55BVXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157DV30L-55BVXET FAQ
1.How can I place an order for CY62157DV30L-55BVXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157DV30L-55BVXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157DV30L-55BVXET reliable?
The price and inventory of CY62157DV30L-55BVXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157DV30L-55BVXET is usually 5 days.
3.What payment methods are accepted for CY62157DV30L-55BVXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157DV30L-55BVXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157DV30L-55BVXET?
CY62157DV30L-55BVXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157DV30L-55BVXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157DV30L-55BVXET?
For technical support, including CY62157DV30L-55BVXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157DV30L-55BVXET requirements.
6.How does Aetrix verify that CY62157DV30L-55BVXET is sourced from the original manufacturer or authorized distributors?
All CY62157DV30L-55BVXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157DV30L-55BVXET meets industry standards.
7.What is the process for return or replacement of CY62157DV30L-55BVXET?
All CY62157DV30L-55BVXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62157DV30L-55BVXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157DV30L-55BVXET part is unused and in its original packaging.
Return procedure for CY62157DV30L-55BVXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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