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Infineon Technologies CY62157DV30L-55ZSXET

Part No.:
CY62157DV30L-55ZSXET
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY62157DV30L-55ZSXET.pdf
Description:
IC SRAM 8MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,522

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Product details

Overview

CY62157DV30L-55ZSXET from Cypress Semiconductor is a 8-Mbit (512K × 16) MoBL® CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features ultra-low active current (1.5 mA @ 1 MHz), automatic CE-based power-down, and byte-wide I/O control via BHE/ BLE for embedded memory expansion in portable and battery-sensitive systems.

For engineers reviewing the CY62157DV30L-55ZSXET datasheet, CY62157DV30L-55ZSXET pinout, CY62157DV30L-55ZSXET application, or CY62157DV30L-55ZSXET equivalent, this device supports low-power SRAM replacement in handheld instrumentation, industrial controllers, and real-time data buffering where deterministic timing and standby current <20 µA are critical.

Technical Context

This SRAM implements dual chip enable (CE1/CE2) logic with independent byte enable (BHE/BLE) for 16-bit data partitioning, enabling selective write to high or low bytes without affecting adjacent locations. Its automatic power-down activates when CE1 is HIGH or CE2 is LOW - eliminating external power management circuitry.

The device uses CMOS core design with tri-state outputs controlled by OE, CE, and byte enables, supporting high-impedance states during deselect, write, or output disable. All timing parameters (tRC = 55 ns, tAA = 55 ns, tDOE = 25 ns) are guaranteed over full voltage (2.2–3.6 V) and temperature (–40°C to +85°C) ranges.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 512K words × 16 bits - provides 1 MB of fast, non-volatile-equivalent storage with parallel bus interface
Access Time 55 ns - ensures compatibility with 18 MHz synchronous bus timing and meets real-time buffer latency requirements
Supply Voltage Range 2.20 V to 3.60 V - supports direct interfacing with 2.5 V and 3.3 V logic families without level shifters
Active Current (1 MHz) 1.5 mA typical - reduces average power in intermittently accessed memory subsystems
Standby Current (ISB2) 2 µA typical - enables multi-year battery operation in always-on monitoring nodes
Operating Temperature –40°C to +85°C - qualified for industrial-grade reliability in uncontrolled ambient environments
Package 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch) - supports high-density PCB layouts with improved thermal dissipation vs. TSOP

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), RoHS-compliant, 6 mm × 8 mm footprint, 0.8 mm ball pitch, JEDEC MO-276AB compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Inputs 19-bit address bus supporting full 512K-word addressing; no A19 required in 512K×16 mode
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel interface; high-impedance during deselect, OE HIGH, or write cycles
CE1, CE2 Chip Enable Inputs Dual CE architecture enables hierarchical memory decoding; automatic power-down if CE1 HIGH or CE2 LOW
OE Output Enable Controls read-data output drive; HIGH forces I/O pins to high-Z regardless of CE state
WE Write Enable Active-Low signal initiating write cycle; must be LOW concurrent with valid CE and address setup
BHE, BLE Byte High/Low Enable Selective 8-bit writes: BLE LOW → I/O0–I/O7 active; BHE LOW → I/O8–I/O15 active
VCC, VSS Power Supply Pins Single 2.2–3.6 V supply; two VSS pins provide dedicated ground return paths for noise isolation
NC, DNU No-Connect / Do-Not-Use NC pins are unconnected internally; DNU pins must remain floating per datasheet guidance

Key Features

Feature Design Value
MoBL® Ultra-Low Power Architecture 1.5 mA active current at 1 MHz and 2 µA standby current enable >5-year battery life in portable telemetry devices
Dual Chip Enable with Auto Power-Down CE1 HIGH or CE2 LOW automatically disables internal circuitry - eliminates need for external sleep controllers
Independent Byte Write Control BHE/BLE allow partial-word writes without read-modify-write sequences - improves firmware efficiency in 8-bit peripheral interfaces
Pb-Free 48-Ball FBGA Packaging 6×8 mm footprint with 0.8 mm pitch supports automated assembly and thermal performance superior to TSOP alternatives
Pin Compatibility Across Voltage Grades Direct drop-in replacement for CY62157CV25/CV30/CV33 - simplifies voltage-scaling upgrades in existing designs

Applications

Portable Medical Sensors Industrial PLC Data Buffers

Use Scenario: Continuous ECG waveform sampling at 1 kHz with local preprocessing and burst transmission.

IC Role / Device Role / Timing Role: High-speed, low-leakage SRAM storing 10 seconds of raw 12-bit samples prior to wireless upload.

Use Value: 55 ns access time ensures zero-cycle wait-state CPU reads; 2 µA ISB2 extends coin-cell lifetime beyond 36 months.

Use Scenario: Real-time logging of analog I/O and digital event timestamps in DIN-rail mounted controllers.

IC Role / Device Role / Timing Role: Non-volatile backup buffer holding last 1000 process events during AC brownouts.

Use Value: Automatic CE power-down triggers within 45 ns of loss of enable, preserving data integrity without software intervention.

Handheld Test Equipment Automotive Body Control Modules

Use Scenario: Digital multimeter capturing transient voltage spikes at 1 MS/s with on-device FFT analysis.

IC Role / Device Role / Timing Role: Dual-port accessible memory staging sampled data for DMA transfer to ARM Cortex-M4 FFT engine.

Use Value: BHE/BLE byte enables allow simultaneous 8-bit coefficient loading and 8-bit sample streaming - halving memory bandwidth demand.

Use Scenario: Occupant detection system aggregating seat sensor, door switch, and belt latch status over CAN FD bus.

IC Role / Device Role / Timing Role: Low-power SRAM caching 256-byte rolling diagnostic log updated every 100 ms.

Use Value: 2.2–3.6 V operation tolerates automotive battery transients; –40°C to +85°C rating ensures reliability across under-hood thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV51216BLL-55NLI Same 512K×16 organization, 55 ns speed, but 2.7–3.6 V only; ISB2 = 12 µA typical Lacks 2.2 V support and auto power-down on CE2 LOW; requires external power gating for sub-µA standby Choose for cost-sensitive 3.3 V-only systems where extended voltage range is unnecessary
ON Semiconductor NVSRAM N25S80-55GFT Non-volatile SRAM with integrated EEPROM backup; 55 ns access but higher ICC (25 mA max) Provides data retention during power loss without external battery; not suitable for pure low-power buffering Choose when persistent storage across power cycles is mandatory, accepting higher active current and cost

Compared with IS62WV51216BLL-55NLI and N25S80-55GFT, the CY62157DV30L-55ZSXET uniquely delivers 2.2 V operation, sub-µA-level standby via hardware CE control, and true byte-selectable writes - making it optimal for battery-constrained, voltage-flexible embedded buffers.

Availability

CY62157DV30L-55ZSXET is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, and handheld test equipment requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant FBGA packaging.

Supply support for CY62157DV30L-55ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer applications, with emphasis on low-power innovation and mixed-signal integration.

The CY62157DV30 series belongs to Cypress's MoBL® (More Battery Life™) SRAM product line, engineered specifically for energy-constrained portable and embedded systems requiring deterministic timing and ultra-low quiescent current.

FAQ

What is the minimum VCC required to retain data in CY62157DV30L-55ZSXET?

Data retention is guaranteed down to VCC = 1.5 V, with ICCDR ≤ 10 µA typical at that voltage. The device enters data retention mode automatically when CE1 is HIGH or CE2 is LOW, and maintains stored bits without refresh as long as VCC remains ≥1.5 V and ambient temperature stays within specification limits.

Can CY62157DV30L-55ZSXET operate reliably at 2.2 V with 55 ns timing?

Yes - all AC specifications including tRC = 55 ns, tAA = 55 ns, and tDOE = 25 ns are fully guaranteed across the entire 2.2–3.6 V range and –40°C to +85°C temperature span. No derating is required at minimum VCC.

How does the dual CE architecture improve system power management?

CE1 and CE2 allow hierarchical memory mapping: CE1 can serve as global enable while CE2 acts as zone select. When either CE1 goes HIGH or CE2 goes LOW, the device enters automatic power-down with ISB2 ≤ 20 µA - eliminating software-controlled sleep modes and reducing firmware complexity.

Is the 48-ball FBGA package compatible with standard reflow profiles?

Yes - the CY62157DV30L-55ZSXET in 48-ball FBGA conforms to IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles with peak temperature ≤260°C. Board layout must follow Cypress's recommended pad stack and stencil design guidelines for void-free solder joints.

CY62157DV30L-55ZSXET Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
8Mbit
Memory Organization:
512K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY62157DV30L-55ZSXET FAQ

1.How can I place an order for CY62157DV30L-55ZSXET through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62157DV30L-55ZSXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62157DV30L-55ZSXET reliable?

The price and inventory of CY62157DV30L-55ZSXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157DV30L-55ZSXET is usually 5 days.

3.What payment methods are accepted for CY62157DV30L-55ZSXET?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157DV30L-55ZSXET transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62157DV30L-55ZSXET?

CY62157DV30L-55ZSXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62157DV30L-55ZSXET order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62157DV30L-55ZSXET?

For technical support, including CY62157DV30L-55ZSXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157DV30L-55ZSXET requirements.

6.How does Aetrix verify that CY62157DV30L-55ZSXET is sourced from the original manufacturer or authorized distributors?

All CY62157DV30L-55ZSXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157DV30L-55ZSXET meets industry standards.

7.What is the process for return or replacement of CY62157DV30L-55ZSXET?

All CY62157DV30L-55ZSXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62157DV30L-55ZSXET, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62157DV30L-55ZSXET part is unused and in its original packaging.

Return procedure for CY62157DV30L-55ZSXET:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62157DV30L-55ZSXET Tags

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