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Infineon Technologies CY62157DV30LL-55BVXAT
- Part No.:
- CY62157DV30LL-55BVXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157DV30LL-55BVXAT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,908
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Product details
Overview
CY62157DV30LL-55BVXAT from Cypress Semiconductor is an 8-Mbit (512K × 16) MoBL® CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features ultra-low active current (1.5 mA @ 1 MHz), standby current as low as 2 µA, and automatic power-down on chip deselect - optimized for battery-powered portable electronics requiring nonvolatile data retention and fast random access.
For engineers reviewing the CY62157DV30LL-55BVXAT datasheet, CY62157DV30LL-55BVXAT pinout, CY62157DV30LL-55BVXAT application, or CY62157DV30LL-55BVXAT equivalent, this device supports byte-wide memory expansion via dual CE, OE, BHE/ BLE controls, operates in 48-ball FBGA package, and delivers deterministic timing across voltage and temperature for embedded control and communication subsystems.
Technical Context
This SRAM implements a full CMOS 512K × 16 architecture with independent byte-enable logic (BHE/BLE), dual chip enable (CE1/CE2) for hierarchical memory mapping, and automatic high-impedance output control during deselect, write, or OE disable. Its tri-state timing guarantees tHZOE ≤ 20 ns and tLZCE ≤ 10 ns at 3.6 V.
The device supports three operating modes: active read/write, automatic power-down (ISB2 = 2–8 µA), and data retention (VDR = 1.5 V, ICCDR = 4 µA). Pin-compatible with CY62157CV25/CV30/CV33, it maintains identical address (A0–A18), data (I/O0–I/O15), and control signal definitions across speed grades.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K words × 16 bits - provides 1 MB total capacity with parallel 16-bit data bus interface |
| Access Time | 55 ns - guarantees maximum read latency under worst-case VCC = 2.2 V, TA = 85°C conditions |
| Supply Voltage Range | 2.20 V to 3.60 V - enables direct interfacing with 2.5 V and 3.3 V logic families without level shifters |
| Active Current (f = 1 MHz) | 1.5 mA typical - reduces system-level power budget in always-on buffer or cache applications |
| Standby Current (ISB2) | 2 µA typical - extends battery life in sleep-mode portable devices such as handheld medical monitors |
| Data Retention Voltage | 1.5 V minimum - allows memory state hold during brown-out or controlled power-down sequences |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade reliability in factory automation and edge-node controllers |
Pinout & Package
Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; no A19 required in 512K×16 mode |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance when CE1 HIGH, CE2 LOW, OE HIGH, or BHE/BLE HIGH |
| CE1, CE2 | Chip Enable Controls | Dual CE architecture enables hierarchical memory decoding; device active only when CE1 = LOW and CE2 = HIGH |
| OE | Output Enable | Controls data bus directionality; outputs enter high-Z when OE = HIGH regardless of CE state |
| WE | Write Enable | Active-low signal initiating write cycle; latches data on falling edge synchronized with CE1/CE2 |
| BHE, BLE | Byte High/Low Enable | Selective 8-bit writes: BLE LOW → I/O0–I/O7 active; BHE LOW → I/O8–I/O15 active |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply; separate VSS pins provide noise isolation for I/O and core logic domains |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 1.5 mA active current @ 1 MHz and 2 µA standby current enable >10-year battery life in coin-cell-powered IoT nodes |
| Automatic Power-Down on Deselect | Hardware-triggered transition to ISB2 mode within tPD = 55 ns when CE1 goes HIGH or CE2 goes LOW |
| Byte-Enable Write Control | Independent BHE/BLE pins allow simultaneous or selective 8-bit writes without external logic or bus gating |
| Pb-Free 48-Ball FBGA Packaging | 6 mm × 8 mm footprint with 0.8 mm pitch supports high-density PCB layouts and automated reflow assembly |
| Pin Compatibility Across Speed Grades | Direct replacement for -45/-70 variants and legacy CY62157CVx series simplifies design reuse and BOM consolidation |
Applications
| Portable Medical Monitor | Industrial PLC Data Buffer |
|---|---|
Use Scenario: Real-time ECG waveform capture and local buffering before wireless transmission. IC Role / Device Role / Timing Role: High-speed, low-power SRAM acting as dual-port FIFO buffer between ADC controller and RF subsystem. Use Value: 55 ns access time ensures zero-cycle wait states during burst sampling; 2 µA ISB2 extends runtime between CR2032 battery replacements. |
Use Scenario: Storing I/O status snapshots and motion-control command queues in modular automation controllers. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding critical process variables during firmware updates or power cycling. Use Value: 1.5 V data retention threshold allows safe state preservation during 100 µs VCC ramp-down per Cypress System Design Guidelines. |
| Wireless Sensor Hub | Automotive Infotainment UI Cache |
Use Scenario: Aggregating sensor fusion data from multiple MEMS accelerometers, gyros, and environmental sensors. IC Role / Device Role / Timing Role: Shared memory resource accessed by ARM Cortex-M4 host and dedicated sensor hub MCU via time-sliced arbitration. Use Value: Dual CE inputs enable seamless bank switching between sensor acquisition and host read cycles without bus contention. |
Use Scenario: Caching navigation map tiles and voice recognition grammar tables in head-unit systems. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for GUI rendering engine, decoupled from main DDR by dedicated 16-bit bus. Use Value: Byte-enable capability allows partial tile updates without full 16-bit writes, reducing dynamic power by ~35% per cache line operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-55NLI | Same 512K×16 organization, 55 ns access, –40°C to +85°C, but uses single CE and lacks BHE/BLE byte control | Requires external logic for byte-write isolation; not drop-in for designs using BLE/BHE-based partial writes | Select when cost sensitivity outweighs byte-enable flexibility and board space permits discrete gating |
| Cypress CY62157EV30LL-55BVXI | Successor generation with identical pinout, same 55 ns speed, but enhanced data retention (ICCDR = 2 µA) and extended VCC min = 2.0 V | Enables deeper brown-out tolerance and longer retention in energy-harvesting systems | Prefer for new designs targeting extended lifecycle or lower-voltage operation below 2.2 V |
Compared with IS62WV51216BLL-55NLI, CY62157DV30LL-55BVXAT offers hardware byte masking without external components; versus CY62157EV30LL-55BVXI, it trades marginally higher retention current for proven qualification history in long-lifecycle industrial deployments.
Availability
CY62157DV30LL-55BVXAT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, wireless sensor hubs, and automotive infotainment UI caches requiring stable component supply across multi-year production programs.
Supply support for CY62157DV30LL-55BVXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics, with headquarters in San Jose, CA.
CY62157DV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, fast-access memory in portable and energy-constrained embedded systems.
FAQ
What is the minimum VCC required to retain data in CY62157DV30LL-55BVXAT?
The device guarantees data retention down to VCC = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR is 4 µA typical under industrial temperature conditions. Operation below 2.2 V is not supported for active read/write cycles, but retention mode remains functional as long as CE1 is deasserted and CE2 asserted per the power-down condition.
Can CY62157DV30LL-55BVXAT be used in byte-wide (1M × 8) configuration?
No - the CY62157DV30LL-55BVXAT is factory-configured and characterized exclusively for 512K × 16 operation. The 1M × 8 mode referenced in the datasheet applies only to the CY62158DV30 variant and requires different pin assignments (e.g., A19 on pin 45), which are not implemented or validated for this part number.
How does automatic power-down activate, and what is its timing behavior?
Automatic power-down triggers when CE1 goes HIGH or CE2 goes LOW, transitioning the device to ISB2 mode within tPD = 55 ns max. During this interval, outputs go high-impedance (tHZCE ≤ 20 ns), and supply current drops to 2–8 µA. No external control signal or sequence is needed - the behavior is fully internal and synchronous to CE edge transitions.
Is the 48-ball FBGA package of CY62157DV30LL-55BVXAT compatible with standard reflow profiles?
Yes - the Pb-free 48-ball FBGA package is qualified for IPC/JEDEC J-STD-020D-compliant lead-free reflow, with peak temperature up to 260°C. Thermal resistance values (ΘJA = 39.3°C/W) and solder mask-defined pads are documented in the package drawing, supporting standard stencil design and placement accuracy down to ±0.05 mm.
CY62157DV30LL-55BVXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157DV30LL-55BVXAT FAQ
1.How can I place an order for CY62157DV30LL-55BVXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157DV30LL-55BVXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157DV30LL-55BVXAT reliable?
The price and inventory of CY62157DV30LL-55BVXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157DV30LL-55BVXAT is usually 5 days.
3.What payment methods are accepted for CY62157DV30LL-55BVXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157DV30LL-55BVXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157DV30LL-55BVXAT?
CY62157DV30LL-55BVXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157DV30LL-55BVXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157DV30LL-55BVXAT?
For technical support, including CY62157DV30LL-55BVXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157DV30LL-55BVXAT requirements.
6.How does Aetrix verify that CY62157DV30LL-55BVXAT is sourced from the original manufacturer or authorized distributors?
All CY62157DV30LL-55BVXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157DV30LL-55BVXAT meets industry standards.
7.What is the process for return or replacement of CY62157DV30LL-55BVXAT?
All CY62157DV30LL-55BVXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157DV30LL-55BVXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157DV30LL-55BVXAT part is unused and in its original packaging.
Return procedure for CY62157DV30LL-55BVXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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