Infineon Technologies CY62157DV30LL-55BVXI

Overview

CY62157DV30LL-55BVXI from Cypress Semiconductor is an 8-Mbit (512K × 16) MoBL® CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features dual chip enables (CE1/CE2), byte-level control (BHE/BLE), automatic power-down, and ultra-low active current (1.5 mA @ 1 MHz), targeting battery-powered portable systems requiring fast, low-power memory.

For engineers reviewing the CY62157DV30LL-55BVXI datasheet, CY62157DV30LL-55BVXI pinout, CY62157DV30LL-55BVXI application, or CY62157DV30LL-55BVXI equivalent, this device supports high-density memory expansion in space-constrained embedded designs where standby current (≤8 µA), read/write timing integrity, and Pb-free TSOP I packaging are critical selection criteria.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive CMOS architecture with independent byte-enable control for true 16-bit data bus partitioning. Its dual CE architecture allows hierarchical memory mapping, while automatic CE-driven power-down reduces ISB2 to 8 µA without external control logic.

Timing is defined by overlapping enable signals: read access requires CE1 LOW, CE2 HIGH, OE LOW, and WE HIGH; write requires CE1 LOW, CE2 HIGH, WE LOW, and at least one of BHE/BLE LOW. All AC parameters-including tACE (55 ns), tDOE (25 ns), and tHZOE (20 ns)-are guaranteed over full voltage and temperature range.

Key Specifications

Pinout & Package

Package: 48-pin Thin Small Outline Package Type I (TSOP I), 12 × 20 mm body, 0.5 mm lead pitch, Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.

Compared with IS62WV51216BLL-55NLI, CY62157DV30LL-55BVXI delivers true byte-selectable writes and lower standby current; versus CY62157EV30LL-55BVXI, it trades 3 µA ISB2 reduction for proven qualification history in long-lifecycle industrial programs.

Availability

CY62157DV30LL-55BVXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, wireless sensor nodes, and automotive infotainment display caches requiring stable component supply across multi-year production runs.

Supply support for CY62157DV30LL-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

CY62157DV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-speed parallel memory applications in portable and energy-constrained embedded systems.

FAQ

What is the minimum VCC required to retain data in CY62157DV30LL-55BVXI?

Data retention is guaranteed down to VCC = 1.5 V, with ICCDR ≤ 4 µA under those conditions. The device enters data retention mode automatically when CE1 is HIGH or CE2 is LOW, and maintains stored contents as long as VCC remains ≥1.5 V and ambient temperature stays within specification limits. No external refresh or backup power is needed during retention.

Can CY62157DV30LL-55BVXI operate with only one chip enable signal?

No - the device requires both CE1 and CE2 to be asserted (CE1 = LOW, CE2 = HIGH) for normal read/write operation. The 44-pin TSOP II variant (CY62157DV30L) uses a single CE, but this 48-pin TSOP I version mandates dual CE logic per its truth table and functional description. Using only one CE will prevent memory access.

Is the BYTE pin used in CY62157DV30LL-55BVXI's 512K×16 configuration?

Yes - Pin 45 (BYTE) must be tied HIGH to configure the device as a 512K×16 SRAM. If tied LOW, it operates in 1M×8 mode (per CY62158DV30 datasheet), repurposing A19 and disabling BHE/BLE functionality. For standard 16-bit operation, BYTE = HIGH is mandatory and explicitly required in the datasheet's note #5.

Does CY62157DV30LL-55BVXI support asynchronous or synchronous operation?

It is an asynchronous SRAM: all timing is referenced to input signal edges (CE, OE, WE, BHE, BLE) with no clock input required. Read/write cycles are initiated and terminated by level-sensitive control signals, and internal timing parameters (e.g., tAA, tWC) define maximum guaranteed speeds without clock synchronization.