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Infineon Technologies CY62157ELL-45ZSXI
- Part No.:
- CY62157ELL-45ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62157ELL-45ZSXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:483
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Product details
Overview
CY62157ELL-45ZSXI from Cypress Semiconductor is an 8-Mbit (512 K × 16) CMOS static RAM with 45 ns access time, 4.5–5.5 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features dual chip enables (CE1/CE2), byte-wide I/O control (BHE/BLE), and ultra-low standby current (2 µA typical). Used in portable embedded systems requiring battery-efficient memory buffering and fast random-access storage.
For engineers reviewing the CY62157ELL-45ZSXI datasheet, CY62157ELL-45ZSXI pinout, CY62157ELL-45ZSXI application, or CY62157ELL-45ZSXI equivalent, key selection criteria include TSOP II package compatibility, TTL-level input interface support, automatic power-down behavior under CE/BHE/BLE deassertion, and 16-bit data bus alignment for microcontroller co-processor interfaces.
Technical Context
The CY62157ELL-45ZSXI implements a 512K × 16 asynchronous SRAM architecture with independent byte enable control for high- and low-byte lanes. Its dual CE inputs (CE1 active-low, CE2 active-high) enable hierarchical memory mapping and seamless expansion across multiple devices without external logic.
Power management relies on automatic CE-driven power-down: device enters ultra-low-ISB mode when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH. Output drivers enter high-impedance state during deselection, OE HIGH, write cycles, or simultaneous BHE/BLE deassertion - ensuring clean bus sharing in multi-peripheral systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512 K × 16) - supports 16-bit parallel data paths without external multiplexing |
| Access Time | 45 ns - enables direct interfacing with 22 MHz synchronous buses or sub-25 MHz microcontrollers |
| Supply Voltage | 4.5 V–5.5 V - compatible with legacy 5 V TTL logic families and regulated 5 V rails |
| Standby Current | 2 µA typical / 8 µA max (industrial) - extends battery life in always-on portable instrumentation |
| Operating Current | 1.8 mA typical at 1 MHz - reduces thermal load in compact sealed enclosures |
| Temperature Range | –40 °C to +85 °C - qualified for industrial control panels and factory automation hardware |
| Data Retention Voltage | 2 V minimum - maintains stored contents during brown-out conditions or controlled power-down sequences |
Pinout & Package
Package: 44-pin TSOP II (Thin Small Outline Package, Type II), 400 mil width, lead-free finish. Pin 1 index corner marked with notch or dot; pins numbered counter-clockwise from top-left.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; no internal latching - requires stable address during CE/OE assertion |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance when deselected, OE HIGH, or during write cycles |
| CE1, CE2 | Chip Enable Controls | CE1 active-low + CE2 active-high must both be asserted for access; either deassertion forces standby mode |
| OE | Output Enable | Active-low read strobe; output drivers disabled (high-Z) when HIGH, enabling bus sharing |
| WE | Write Enable | Active-low write strobe; initiates write when CE1/CE2 active and WE transitions LOW |
| BHE, BLE | Byte Enable Signals | Independent high/low-byte gating - allows 8-bit writes without disturbing adjacent byte lane |
| VCC, VSS | Power Supply | Single 5 V supply; two VCC and two VSS pins reduce IR drop and improve noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 2 µA typical ISB enables >1-year battery operation in metering devices with infrequent memory access |
| Dual Chip Enable Logic | CE1/CE2 pairing simplifies bank selection in multi-SRAM systems without address decoder logic |
| Byte-Wide Write Control | BHE/BLE allow partial-word updates - critical for real-time firmware patching and configuration storage |
| TTL-Compatible Input Thresholds | VIH = 2.2 V min ensures reliable operation with legacy 5 V microcontrollers lacking CMOS-level drivers |
| Automatic Power-Down | No external control needed - standby activates instantly upon CE/BHE/BLE deassertion, eliminating software overhead |
Applications
| Industrial Data Logger | Medical Patient Monitor Buffer |
|---|---|
Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂, NIBP) at 1 kHz with local timestamping and burst upload. IC Role / Device Role / Timing Role: High-speed, low-power buffer between ADC controller and ARM Cortex-M4 host MCU. Use Value: 45 ns access enables real-time FIFO management; 2 µA standby preserves battery during idle periods between patient sessions. |
Use Scenario: Temporary storage of waveform segments prior to compression and wireless transmission to central station. IC Role / Device Role / Timing Role: Volatile frame buffer synchronized to display refresh and RF transmit timing windows. Use Value: Dual CE supports concurrent read (to display) and write (from ADC) via bank interleaving; 16-bit bus matches Cortex-M7 AXI interface width. |
| Programmable Logic Controller (PLC) I/O Cache | Automotive Body Control Module (BCM) |
Use Scenario: Caching digital I/O states and analog sensor readings across 16-channel discrete I/O expansion modules. IC Role / Device Role / Timing Role: Shared memory resource accessed by FPGA-based I/O manager and ARM application processor. Use Value: BHE/BLE enables atomic 8-bit updates to individual I/O port registers without read-modify-write cycles. |
Use Scenario: Storing runtime calibration tables and fault logs in body domain controllers with strict EMC and thermal constraints. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding EEPROM-mirrored parameters during active operation. Use Value: –40 °C to +85 °C rating ensures reliability in under-hood environments; 44-pin TSOP II fits constrained PCB layouts near CAN transceivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 8-Mbit asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV51216AL-10TLI | 10 ns faster access (10 ns vs. 45 ns); 3.3 V only; no BHE/BLE; single CE | Requires level-shifting for 5 V systems; lacks byte-select capability for partial writes | Select only if system uses 3.3 V logic and prioritizes speed over power or interface flexibility |
| AS6C8016-55PCN | 55 ns access; 4.5–5.5 V; single CE; no BHE/BLE; higher ISB (15 µA typical) | Simpler control interface but no byte-enable granularity; less suitable for mixed 8/16-bit peripheral access | Prefer for cost-sensitive industrial controls where 55 ns latency is acceptable and byte masking is unnecessary |
Compared with IS61LV51216AL-10TLI and AS6C8016-55PCN, the CY62157ELL-45ZSXI uniquely balances 45 ns performance, 5 V TTL compatibility, dual CE expandability, and 2 µA standby - making it optimal for battery-powered industrial edge nodes requiring robust 16-bit memory interfacing without voltage translation.
Availability
CY62157ELL-45ZSXI is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, programmable logic controllers, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for CY62157ELL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on low-power innovation and long-term supply assurance.
The CY62157E MoBL® SRAM product line targets portable and energy-constrained embedded systems needing fast, deterministic, and ultra-low-quiescent-current volatile memory - especially where battery life, thermal management, and 5 V legacy interface compatibility are critical.
FAQ
Is CY62157ELL-45ZSXI compatible with 3.3 V microcontrollers?
No. The CY62157ELL-45ZSXI operates strictly at 4.5–5.5 V and features TTL-compatible input thresholds (VIH ≥ 2.2 V), not CMOS-level 3.3 V logic. Interfacing with 3.3 V processors requires bidirectional level shifters or voltage translators to prevent damage and ensure signal integrity.
What happens to data during power-down mode?
Data retention is guaranteed down to 2 V VCC with ICCDR ≤ 8 µA (industrial grade). When CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH, the device enters automatic power-down - preserving all stored bits without external refresh or backup power.
Can CY62157ELL-45ZSXI replace older CY62157EV devices?
Yes, with qualification. The CY62157ELL-45ZSXI is a drop-in replacement for CY62157EV-45ZSXI in 44-pin TSOP II packages, sharing identical pinout, timing, and electrical specs. However, verify board layout for Pb-free solder profile compliance and confirm absence of legacy AN13842/AN66311 timing restrictions in your design revision.
Does this SRAM require external pull-up resistors on control lines?
No. Internal weak pull-downs exist on CE2 and WE; other inputs (CE1, OE, BHE, BLE, A0–A18, I/O0–I/O15) have no internal terminations. External pull-ups are required only if system-level noise immunity or default-deselected behavior is needed - e.g., 10 kΩ pull-up on CE1 to hold device inactive at power-up.
CY62157ELL-45ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62157ELL-45ZSXI FAQ
1.How can I place an order for CY62157ELL-45ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157ELL-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157ELL-45ZSXI reliable?
The price and inventory of CY62157ELL-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157ELL-45ZSXI is usually 5 days.
3.What payment methods are accepted for CY62157ELL-45ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157ELL-45ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157ELL-45ZSXI?
CY62157ELL-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157ELL-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157ELL-45ZSXI?
For technical support, including CY62157ELL-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157ELL-45ZSXI requirements.
6.How does Aetrix verify that CY62157ELL-45ZSXI is sourced from the original manufacturer or authorized distributors?
All CY62157ELL-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157ELL-45ZSXI meets industry standards.
7.What is the process for return or replacement of CY62157ELL-45ZSXI?
All CY62157ELL-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62157ELL-45ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157ELL-45ZSXI part is unused and in its original packaging.
Return procedure for CY62157ELL-45ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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