Infineon Technologies CY62157ELL-55BVXET

Overview

CY62157ELL-55BVXET from Cypress Semiconductor is an 8-Mbit (512 K × 16) CMOS static RAM with 45 ns access time (industrial grade), 4.5–5.5 V supply range, and ultra-low standby current (2 µA typical). It supports byte-level write control via BHE/ BLE, automatic power-down on deselect, and interfaces directly with TTL-level processors in portable and embedded memory subsystems.

For engineers reviewing the CY62157ELL-55BVXET datasheet, CY62157ELL-55BVXET pinout, CY62157ELL-55BVXET application, or CY62157ELL-55BVXET equivalent, key selection criteria include industrial temperature support (–40 °C to +85 °C), TSOP II package compatibility, 16-bit data bus width, low active current (1.8 mA at 1 MHz), and CE1/CE2 dual-chip-enable logic for memory expansion.

Technical Context

The CY62157ELL-55BVXET implements a 512K × 16 asynchronous SRAM architecture with independent high- and low-byte enables (BHE/ BLE), dual chip enables (CE1/ CE2), and automatic power-down when deselected. Its timing is defined by tRC = 45 ns, tAA = 45 ns, and tDOE = 22 ns under industrial conditions.

It uses CMOS process technology optimized for low-power portable operation, supports TTL-compatible input thresholds (VIH = 2.2 V min), and requires CMOS-level control signals for guaranteed ISB1/ISB2 standby current compliance. Data retention is supported down to VCC = 2 V with ICCDR ≤ 8 µA.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (Type II, 400 mil width), RoHS-compliant, surface-mount.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 512K × 16 SRAM applications.

Compared with IS62WV51216BLL-45NLI and R1LV5256ES-55SI#U0, the CY62157ELL-55BVXET uniquely delivers 5 V TTL compatibility, integrated byte enables, and industrial temperature support in a single 44-pin TSOP II package-enabling drop-in replacement in legacy designs without redesign.

Availability

CY62157ELL-55BVXET is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive body control modules, and portable medical sensor hubs requiring stable component supply across extended product lifecycles.

Supply support for CY62157ELL-55BVXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial and automotive markets.

The CY62157E MoBL® SRAM product line was designed specifically for battery-sensitive portable and embedded applications requiring low-active and ultra-low-standby current with full 5 V system compatibility.

FAQ

Is CY62157ELL-55BVXET compatible with 3.3 V microcontrollers?

No. This device requires 4.5–5.5 V supply and features TTL-compatible inputs (VIH ≥ 2.2 V), not 3.3 V CMOS thresholds. Interfacing with 3.3 V processors requires level-shifting on all control and data lines, and VCC must remain at 5 V. For native 3.3 V operation, consider ISSI IS62WV51216BLL-45NLI instead.

What happens to I/O pins during write operations?

During active write cycles (CE1 LOW, CE2 HIGH, WE LOW), the I/O0–I/O15 pins enter high-impedance state regardless of OE or BHE/ BLE status. Data is latched internally from the prior high-Z window; outputs remain tri-stated until the next valid read cycle begins with OE LOW.

Can CE1 and CE2 be tied together for simple enable logic?

Yes, but with constraints: CE1 must be driven active-LOW and CE2 active-HIGH, so tying them directly violates logic polarity. Instead, invert CE2 using a small-signal transistor or buffer, or use only CE1 (per note 3 in datasheet) while holding CE2 permanently HIGH. Doing so forfeits dual-enable expansion capability.

Does this SRAM retain data during brief power interruptions?

Yes - it supports data retention down to VCC = 2 V with ICCDR ≤ 8 µA (industrial). When VCC drops below 4.5 V but remains ≥2 V and CE1/CE2/BHE/ BLE are held in deselect state, stored data persists for hours. However, no internal backup capacitor or battery is included; external hold-up capacitance must be sized per application discharge profile.