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Infineon Technologies CY62157ELL-55ZSXE
- Part No.:
- CY62157ELL-55ZSXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62157ELL-55ZSXE.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:115
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Product details
Overview
CY62157ELL-55ZSXE from Cypress Semiconductor is an 8-Mbit (512 K × 16) CMOS static RAM with 45 ns access time, 4.5–5.5 V supply range, and ultra-low standby current (2 µA typical). It supports byte-level write control via BHE/ BLE, automatic power-down on deselect, and operates across –40 °C to +85 °C for industrial applications. Used in portable instrumentation and battery-powered microcontroller systems requiring non-volatile data buffering.
For engineers reviewing the CY62157ELL-55ZSXE datasheet, CY62157ELL-55ZSXE pinout, CY62157ELL-55ZSXE application, or CY62157ELL-55ZSXE equivalent, key selection criteria include TSOP II package compatibility, TTL-level I/O interface requirements, CE1/CE2 dual-chip-enable logic, and sub-8 µA industrial standby current compliance.
Technical Context
The CY62157ELL-55ZSXE implements a 512K × 16 asynchronous SRAM architecture with independent high- and low-byte enables (BHE/ BLE), dual chip enables (CE1 active-low, CE2 active-low), and OE-controlled read output gating. Its automatic power-down activates when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - placing I/Os in high-impedance state without external control logic.
It features TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and requires CMOS-level tie-offs on CE/BE pins to guarantee ISB2 ≤ 8 µA. The device does not support CMOS input voltage thresholds and is incompatible with processors requiring VIH > 3.5 V without level-shifting per AN6081.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512 K × 16 bits - provides 1 MB of fast, random-access storage with byte-selectable writes. |
| Access Time | 45 ns - ensures compatibility with 16-bit microcontrollers running at ≤22 MHz bus frequency. |
| Supply Voltage | 4.5 V to 5.5 V - supports legacy 5 V systems and tolerates ±10% rail variation without regulation. |
| Standby Current | 2 µA typical / 8 µA max (industrial) - enables multi-year battery life in always-on sensor nodes. |
| Operating Current | 1.8 mA typical at 1 MHz - reduces thermal load in dense PCB layouts with multiple SRAMs. |
| Temperature Range | –40 °C to +85 °C - qualified for industrial automation, test equipment, and medical diagnostics hardware. |
| Data Retention Voltage | 2.0 V minimum - allows graceful shutdown and memory hold during brown-out conditions. |
Pinout & Package
Package: 44-pin TSOP II (Thin Small Outline Package, Type II), body size 10.16 mm × 18.42 mm, 0.8 mm lead pitch, JEDEC MO-141AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CE1, CE2 | Dual Chip Enable inputs | Active-low CE1 and active-low CE2 enable memory access only when CE1 = LOW AND CE2 = HIGH - prevents accidental writes during reset or power sequencing. |
| OE | Output Enable | Controls tri-state output drivers; outputs go high-Z when OE = HIGH, enabling bus sharing without external transceivers. |
| WE | Write Enable | Active-low signal initiating write cycle; combined with CE1/CE2 and BHE/ BLE determines byte-write granularity. |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write masking: BLE = LOW writes I/O0–I/O7; BHE = LOW writes I/O8–I/O15 - eliminates need for external byte demux. |
| I/O0–I/O15 | Bi-directional Data Bus | 16-bit multiplexed data path; placed in high-Z during deselect, OE HIGH, or active write - simplifies PCB routing and reduces contention risk. |
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; no internal address latching - requires stable address before CE/OE assertion. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low standby power | 2 µA typical ISB2 enables >5-year operation on coin-cell batteries in data-logger applications. |
| Automatic power-down mode | Hardware-triggered entry into low-power state upon CE/BHE/ BLE deassertion - no firmware overhead or clock gating required. |
| TTL-compatible I/O interface | VIH ≥ 2.2 V and VIL ≤ 0.8 V allow direct connection to legacy 5 V microcontrollers (e.g., 8051, PIC18F) without level shifters. |
| Byte-selectable write capability | Independent BHE/ BLE control permits partial-word updates - critical for real-time control registers and ring-buffer management. |
| High-speed 45 ns access | Meets timing closure for 16-bit bus interfaces operating up to 22 MHz without wait states. |
Applications
| Portable Data Logger | Industrial PLC I/O Buffer |
|---|---|
|
Use Scenario: Battery-powered environmental sensor node recording temperature, humidity, and pressure at 10 Hz for 30 days. IC Role / Device Role: Primary data buffer storing timestamped samples before periodic RF upload. Use Value: 2 µA standby current extends CR2032 battery life beyond 3 years; 45 ns access enables rapid burst reads during transmission. |
Use Scenario: Modular programmable logic controller with hot-swappable I/O modules requiring local register mirroring. IC Role / Device Role: Dual-port accessible SRAM holding mirrored status and configuration registers for each I/O channel. Use Value: Byte-enable writes allow atomic updates to individual module registers without disturbing adjacent channels' data. |
| Medical Diagnostic Handheld | Automotive ECU Calibration Storage |
|
Use Scenario: Portable ultrasound probe with embedded FPGA processing raw echo data before display rendering. IC Role / Device Role: Frame buffer SRAM interfacing directly with FPGA's 16-bit Avalon-MM bus. Use Value: TTL-level compatibility eliminates level-shifter components; 44-pin TSOP II footprint fits constrained handheld PCB area. |
Use Scenario: Engine control unit storing adaptive fuel trim tables updated during closed-loop operation. IC Role / Device Role: Non-volatile shadow RAM holding calibration parameters during ECU reset or flash reprogramming. Use Value: Data retention down to 2.0 V ensures parameter integrity during cranking-induced brownouts (≥4.2 V nominal). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 8-Mbit asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV51216AL-10TLI | 10 ns faster (35 ns), but higher ISB = 30 µA typical; 3.3 V only; LVTTL I/O. | Requires 3.3 V rail and level-shifting for 5 V MCU interfaces; unsuitable for battery-critical designs. | Select only if system uses 3.3 V logic and demands <35 ns access - not drop-in compatible due to voltage and interface mismatch. |
| AS6C8016-55TIN | Same 45 ns speed and 5 V supply, but no dual CE (single CE only); ISB = 5 µA typical. | Lacks CE1/CE2 arbitration - cannot support memory-mapped peripheral partitioning or hierarchical decode schemes. | Choose when board layout lacks space for 44-pin TSOP II or when simplified chip-select logic suffices. |
Compared with IS61LV51216AL-10TLI and AS6C8016-55TIN, the CY62157ELL-55ZSXE uniquely balances ultra-low industrial standby power (2 µA), dual CE flexibility for complex address decoding, and native 5 V TTL compatibility - making it optimal for legacy 5 V embedded systems where power and interface fidelity are co-constrained.
Availability
CY62157ELL-55ZSXE is available at Aetrix Electronics and suitable for portable instrumentation, industrial PLC I/O modules, and medical diagnostic handhelds requiring stable component supply across extended product lifecycles.
Supply support for CY62157ELL-55ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with focus on low-power innovation and long-term supply assurance.
The CY62157E MoBL® (More Battery Life) SRAM product line targets portable and energy-constrained systems requiring fast, reliable, and ultra-low-quiescent static RAM - optimized for battery longevity without sacrificing performance.
FAQ
Is CY62157ELL-55ZSXE compatible with 3.3 V microcontrollers?
No. The CY62157ELL-55ZSXE is specified for 4.5–5.5 V operation and features TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), not 3.3 V CMOS levels. Interfacing with 3.3 V controllers requires level-shifting circuitry per AN6081 guidance, and VCC must remain within 4.5–5.5 V regardless of I/O voltage.
What happens to I/O pins during power-down mode?
When deselected (CE1 HIGH or CE2 LOW or both BHE and BLE HIGH), all I/O0–I/O15 pins enter high-impedance state automatically - no external pull-ups or bus-hold circuits needed. This behavior is hardware-enforced and occurs independently of OE or WE state.
Can CY62157ELL-55ZSXE replace a 512K × 8 SRAM?
Not directly. It is a 512K × 16 device requiring a 16-bit data bus. To interface with an 8-bit system, external logic would be needed to split I/O0–I/O7 and I/O8–I/O15 across two cycles or use only half the bus - resulting in reduced bandwidth and added complexity versus native 8-bit SRAMs.
Does this SRAM support battery backup or non-volatile operation?
No. The CY62157ELL-55ZSXE is volatile static RAM. It retains data only while powered above 2.0 V (VDR). For true non-volatility, external battery-backed power supply or NVSRAM companion IC is required - the device itself has no integrated EEPROM or flash.
CY62157ELL-55ZSXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62157ELL-55ZSXE FAQ
1.How can I place an order for CY62157ELL-55ZSXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157ELL-55ZSXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157ELL-55ZSXE reliable?
The price and inventory of CY62157ELL-55ZSXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157ELL-55ZSXE is usually 5 days.
3.What payment methods are accepted for CY62157ELL-55ZSXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157ELL-55ZSXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157ELL-55ZSXE?
CY62157ELL-55ZSXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157ELL-55ZSXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157ELL-55ZSXE?
For technical support, including CY62157ELL-55ZSXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157ELL-55ZSXE requirements.
6.How does Aetrix verify that CY62157ELL-55ZSXE is sourced from the original manufacturer or authorized distributors?
All CY62157ELL-55ZSXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157ELL-55ZSXE meets industry standards.
7.What is the process for return or replacement of CY62157ELL-55ZSXE?
All CY62157ELL-55ZSXE units undergo pre-shipment inspection (PSI). If there is an issue with CY62157ELL-55ZSXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157ELL-55ZSXE part is unused and in its original packaging.
Return procedure for CY62157ELL-55ZSXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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