Infineon Technologies CY62157ELL-55ZSXET

Overview

CY62157ELL-55ZSXET from Cypress Semiconductor is an 8-Mbit (512 K × 16) CMOS static RAM with 45 ns access time, 4.5–5.5 V supply range, and ultra-low standby current (2 µA typical). It features dual chip enables (CE1/CE2), byte-wide control (BHE/BLE), and automatic power-down on deselect - designed for battery-sensitive portable systems requiring reliable non-volatile data retention during sleep.

For engineers reviewing the CY62157ELL-55ZSXET datasheet, CY62157ELL-55ZSXET pinout, CY62157ELL-55ZSXET application, or CY62157ELL-55ZSXET equivalent, key selection criteria include TTL-compatible I/O levels, TSOP II package compatibility, industrial temperature rating (–40 °C to +85 °C), and MoBL® low-power architecture for extended runtime in handheld instrumentation and embedded controllers.

Technical Context

The CY62157ELL-55ZSXET implements a 512K × 16 asynchronous SRAM array with independent high- and low-byte enables (BHE/ BLE), enabling selective 8-bit writes without read-modify-write cycles. Its dual CE architecture (CE1 active-low, CE2 active-high) supports hierarchical memory mapping and seamless expansion across multiple devices.

It uses CMOS logic with TTL-level input thresholds (VIH = 2.2 V min, VIL = 0.8 V max), ensuring direct interfacing with legacy 5 V microcontrollers. Power management relies on automatic CE-triggered standby mode, reducing ICC to ≤8 µA when CE1 is HIGH or CE2 is LOW - verified under full industrial temperature and voltage range (4.5–5.5 V).

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (Thin Small Outline Package, Type II), JEDEC MO-143AC compliant, body size 10.16 mm × 18.42 mm × 1.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 8-Mbit SRAM applications.

Compared with IS62WV51216BLL-45NLI and NVTFS51216L-45G, the CY62157ELL-55ZSXET delivers superior standby efficiency and native TTL compatibility - critical for extending runtime in portable instrumentation and maintaining drop-in replaceability in legacy industrial control hardware.

Availability

CY62157ELL-55ZSXET is available at Aetrix Electronics and suitable for portable medical devices, industrial PLC modules, and automotive body electronics requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for CY62157ELL-55ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in programmable system-on-chip solutions, memory, and USB connectivity ICs for industrial, automotive, and consumer markets.

The CY62157E MoBL® SRAM product line was engineered specifically for ultra-low-power portable electronics - emphasizing sub-µA standby, fast wake-up, and TTL-level interoperability without external support components.

FAQ

Is CY62157ELL-55ZSXET pin-compatible with CY62157EV-45ZSXI?

No. CY62157ELL-55ZSXET uses a 44-pin TSOP II package with dual CE (CE1/CE2), while CY62157EV-45ZSXI is a 48-ball VFBGA variant with different pin mapping and thermal characteristics. The TSOP II version has dedicated NC pins (A18, A16) and distinct power/ground pin layout - mechanical and routing changes are required for substitution.

Does this SRAM support true 16-bit parallel access without byte masking?

Yes. When both BHE and BLE are asserted LOW simultaneously, all 16 I/O lines (I/O0–I/O15) become active for full-word reads/writes. The device does not require external logic to enable 16-bit mode - it is natively supported per the truth table on page 12 of the datasheet.

Can CY62157ELL-55ZSXET operate reliably at 4.5 V with 45 ns timing?

Yes. The 45 ns access time is fully specified and tested over the entire industrial voltage range (4.5–5.5 V) and temperature range (–40 °C to +85 °C). Electrical Characteristics Table on page 4 confirms tAA ≤ 45 ns and tRC ≤ 45 ns at VCC = 4.5 V, TA = 85 °C.

What happens to data during VCC brownout below 2 V?

Data retention is guaranteed down to VCC = 2 V, with ICCDR ≤ 8 µA (industrial). Below 2 V, the device exits data retention mode and contents become undefined. External circuitry (e.g., supercapacitor or backup battery) must hold VCC ≥ 2 V for minimum tCDR (0 ns) to preserve memory state during power loss.