Infineon Technologies CY62157ESL-45ZSXI
- Part No.:
- CY62157ESL-45ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62157ESL-45ZSXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:258
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Product details
Overview
CY62157ESL-45ZSXI from Cypress Semiconductor is a 8-Mbit (512K × 16) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (2 µA typical), and TTL-compatible I/O levels - used as main data buffer in portable industrial controllers requiring battery longevity and fast random-access storage.
For engineers reviewing the CY62157ESL-45ZSXI datasheet, CY62157ESL-45ZSXI pinout, CY62157ESL-45ZSXI application, or CY62157ESL-45ZSXI equivalent, key selection criteria include byte-enable-controlled 16-bit wide memory access, automatic CE-driven power-down behavior, ISB2 ≤ 8 µA at VCC(max), and TSOP II package compatibility with legacy 5 V and modern low-voltage microcontroller buses.
Technical Context
The CY62157ESL-45ZSXI implements a fully decoded 512K × 16 asynchronous SRAM array with independent Byte High Enable (BHE) and Byte Low Enable (BLE) inputs, enabling selective 8-bit writes to upper or lower data bytes without read-modify-write cycles. Its CMOS architecture supports TTL-level input thresholds and guarantees tRC = 45 ns across full industrial temperature range (–40 °C to +85 °C).
Power management relies on dual-mode automatic power down: ISB1/ISB2 ≤ 8 µA when CE is HIGH (or both BHE and BLE are HIGH), with no external control required. Data retention remains valid down to VDR = 1.5 V, supporting low-power hibernation modes in battery-backed systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16) - provides 1 MB of byte-addressable RAM space for firmware stacks or real-time data buffers. |
| Access Time | 45 ns - enables direct interfacing with 22 MHz microcontrollers without wait states. |
| VCC Range | 2.2–3.6 V and 4.5–5.5 V - supports dual-rail designs and legacy 5 V systems while retaining low-power capability. |
| Standby Current | 2 µA typical / 8 µA max - extends battery life in always-on sensor nodes or handheld HMI devices. |
| Operating Current | 1.8 mA typical at 1 MHz - ensures thermal stability in compact enclosures without forced cooling. |
| Data Retention Voltage | 1.5 V minimum - allows safe entry into ultra-low-power sleep mode with minimal backup supply overhead. |
| Input Compatibility | TTL-level inputs only - requires level-shifting when interfacing with pure CMOS processors (e.g., ARM Cortex-M series). |
Pinout & Package
Package: 44-pin Thin Small Outline Package (TSOP II), Pb-free, 0.8 mm pitch, body size 12.0 × 18.4 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word decoding; A18 enables access beyond 256K boundary. |
| I/O0–I/O7 | Lower Byte Data I/O | Bi-directional 8-bit data path active only when BLE = LOW; high-impedance when deselected or during write. |
| I/O8–I/O15 | Upper Byte Data I/O | Bi-directional 8-bit data path active only when BHE = LOW; independent timing from lower byte. |
| CE | Chip Enable | Active-LOW global enable; forces device into automatic power-down (ISB2) when HIGH, disabling all outputs. |
| OE | Output Enable | Active-LOW read strobe; controls output drivers independently of CE and WE for flexible bus sharing. |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and WE both LOW, with timing referenced to last active edge. |
| BHE, BLE | Byte Enable Controls | Independent active-LOW enables for upper/lower data bytes; allow partial writes without read-modify-write overhead. |
| VCC, VSS | Power Supply | Dual VCC pins (pins 31, 32) and dual VSS pins (pins 35, 36) reduce IR drop and improve noise immunity in high-speed operation. |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces standby current to 2 µA typical - extends runtime in coin-cell-powered IoT endpoints by >3× vs. standard SRAMs. |
| Byte-Enable Selective Write | Enables 8-bit writes to I/O0–I/O7 or I/O8–I/O15 independently - eliminates bus contention and simplifies firmware for mixed-data-size protocols. |
| Automatic CE Power-Down | Enters sub-8 µA standby automatically when CE is deasserted - no software or external logic required for power gating. |
| TTL-Compatible Input Thresholds | VIH = 2.2 V min (at 3.3 V VCC); VIL = 0.8 V max - ensures robust interface with legacy 5 V MCUs and FPGA I/O banks without level shifters. |
| Industrial Temperature Range | Specified from –40 °C to +85 °C - validated for use in motor drives, PLC modules, and outdoor telemetry hardware. |
Applications
| Portable Medical Monitor | Industrial PLC Data Buffer |
|---|---|
|
Use Scenario: Real-time waveform capture and display buffering in handheld ECG units powered by single Li-ion cells. IC Role / Device Role / Timing Role: Primary 16-bit data buffer between ADC controller and display processor, accessed at 10–20 MHz burst rates. Use Value: 45 ns access time eliminates wait states; 2 µA standby current extends battery life to >72 hours per charge. |
Use Scenario: Temporary storage of sensor readings and control command queues in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile shadow RAM for volatile configuration registers and cyclic I/O image updates. Use Value: Dual-voltage support (2.2–3.6 V / 4.5–5.5 V) enables reuse across 3.3 V and 5 V PLC generations without redesign. |
| Smart Meter Communication Module | Automotive Diagnostic Tool |
|
Use Scenario: Packet assembly/disassembly buffer for RF and PLC communication stacks in ANSI C12.19-compliant utility meters. IC Role / Device Role / Timing Role: High-reliability intermediate storage for encrypted frame payloads before transmission over narrowband channels. Use Value: Byte-enable writes reduce CPU overhead during fragmented packet handling; ISB2 ≤ 8 µA meets IEC 62056-21 low-power idle requirements. |
Use Scenario: On-device diagnostic log storage in handheld OBD-II scanners used for vehicle ECU fault analysis. IC Role / Device Role / Timing Role: Fast-access scratchpad for timestamped DTC records and live PID streaming during road tests. Use Value: TTL-level compatibility ensures plug-and-play integration with legacy 5 V CAN transceivers and microcontrollers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 8-Mbit asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-45NLI | 45 ns access, 2.5–3.6 V only, CMOS I/O thresholds, 12 µA max ISB | Requires level-shifting for 5 V systems; unsuitable for mixed-voltage designs | Select when system uses only 3.3 V rails and demands lower cost; verify VIH/VIL alignment with host MCU. |
| Renesas R1LV52564AS-45SI#U0 | 45 ns access, 2.2–3.6 V only, TTL-compatible I/O, 5 µA max ISB | Lacks 4.5–5.5 V support; smaller industrial temp range (–40 °C to +85 °C same) | Prefer for new 3.3 V-only designs needing tighter standby spec; not drop-in for legacy 5 V interfaces. |
Compared with IS62WV51216BLL-45NLI and R1LV52564AS-45SI#U0, the CY62157ESL-45ZSXI uniquely supports dual-voltage operation without external regulators, retains TTL compatibility for backward integration, and delivers lowest standby current in 5 V mode - making it optimal for migration paths from legacy industrial platforms.
Availability
CY62157ESL-45ZSXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and smart meter communication modules requiring stable component supply across extended temperature and dual-voltage operation.
Supply support for CY62157ESL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on low-power innovation and long-term supply assurance.
The CY62157ESL belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and energy-constrained systems where nanosecond-speed access must coexist with microamp-level standby consumption.
FAQ
Is CY62157ESL-45ZSXI compatible with 5 V microcontrollers?
Yes - it features TTL-compatible input thresholds (VIH = 2.2 V min at 3.3 V VCC; VIH = 2.4 V min at 5 V VCC) and operates across 4.5–5.5 V, enabling direct connection to legacy 5 V MCUs like the 8051, PIC18F, or older ARM7 derivatives without level shifters.
What happens to I/O pins during chip deselect?
When CE is HIGH (or both BHE and BLE are HIGH), all I/O0–I/O15 pins enter high-impedance state regardless of OE or WE status. This prevents bus contention in multi-SRAM systems and eliminates need for external tri-state logic.
Can CY62157ESL-45ZSXI operate at 4.0 V?
No - datasheet explicitly states specifications are not guaranteed for VCC between 3.6 V and 4.5 V. Operation in that range may yield unpredictable timing or increased leakage; design must use either 2.2–3.6 V or 4.5–5.5 V rails exclusively.
Does this SRAM support true 16-bit parallel access?
Yes - the 512K × 16 organization provides native 16-bit wide data bus access. With BHE and BLE both LOW, I/O0–I/O15 transfer full 16-bit words simultaneously; with either enabled alone, it performs true 8-bit byte writes without affecting the opposite byte.
CY62157ESL-45ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62157ESL-45ZSXI FAQ
1.How can I place an order for CY62157ESL-45ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157ESL-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157ESL-45ZSXI reliable?
The price and inventory of CY62157ESL-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157ESL-45ZSXI is usually 5 days.
3.What payment methods are accepted for CY62157ESL-45ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157ESL-45ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157ESL-45ZSXI?
CY62157ESL-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157ESL-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157ESL-45ZSXI?
For technical support, including CY62157ESL-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157ESL-45ZSXI requirements.
6.How does Aetrix verify that CY62157ESL-45ZSXI is sourced from the original manufacturer or authorized distributors?
All CY62157ESL-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157ESL-45ZSXI meets industry standards.
7.What is the process for return or replacement of CY62157ESL-45ZSXI?
All CY62157ESL-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62157ESL-45ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157ESL-45ZSXI part is unused and in its original packaging.
Return procedure for CY62157ESL-45ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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