Infineon Technologies CY62157ESL-45ZSXIT

Overview

CY62157ESL-45ZSXIT from Cypress Semiconductor is a MoBL® 8-Mbit (512K × 16) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (max 8 µA), and TTL-compatible I/O for embedded microcontroller interfacing in portable industrial systems.

For engineers reviewing the CY62157ESL-45ZSXIT datasheet, CY62157ESL-45ZSXIT pinout, CY62157ESL-45ZSXIT application, or CY62157ESL-45ZSXIT equivalent, this SRAM supports byte-wide memory expansion via BHE/ BLE controls, automatic CE-driven power-down, and high-impedance tri-state outputs during deselect or write cycles - critical for low-power battery-operated designs.

Technical Context

The CY62157ESL-45ZSXIT implements a 512K × 16 asynchronous SRAM architecture with independent byte enable (BHE/BLE) for 8-bit sub-word writes, TTL-level input thresholds (VIH = 2.2 V min at 2.7–3.6 V), and CMOS-compatible output drive (VOH ≥ 2.4 V, VOL ≤ 0.4 V). It requires CE to be driven to CMOS logic levels to guarantee ISB1/ISB2 standby current specs.

Its switching behavior is defined by tRC = 45 ns, tDOE = 22 ns, and tHZOE = 18 ns, with data retention supported down to VCC = 1.5 V and ICCDR ≤ 5 µA. The device enters true standby when CE is HIGH or both BHE and BLE are HIGH, disabling all outputs and reducing active current to microamp levels.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP II), Pb-free, surface-mount, 0.8 mm pitch, 10.16 mm × 18.4 mm footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 8-Mbit asynchronous SRAM applications.

Compared with IS62WV51216BLL-45NLI and R1LV51216ASB-45SI, the CY62157ESL-45ZSXIT uniquely delivers dual-voltage operation, 1.5 V data retention, and industry-leading 2 µA typical standby - making it optimal for battery-critical, mixed-voltage, or brown-out-prone embedded systems.

Availability

CY62157ESL-45ZSXIT is available at Aetrix Electronics and suitable for portable data loggers, industrial HMI terminals, and medical wearables requiring stable component supply, long-lifecycle support, and guaranteed Pb-free TSOP II packaging.

Supply support for CY62157ESL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and consumer electronics.

The CY62157ESL belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable and battery-backed applications where extended runtime and reliable data retention are critical.

FAQ

Is CY62157ESL-45ZSXIT compatible with 5 V microcontrollers?

Yes - its TTL-compatible input thresholds (VIH ≥ 2.2 V at 2.7–3.6 V, and ≥ 2.2 V at 4.5–5.5 V) and 5 V-tolerant inputs allow direct interface with legacy 5 V MCUs. However, VOH max is 3.4 V at 5 V VCC, so verify downstream VIH requirements; AN6081 documents level-shifting options if needed.

What happens to outputs when CE is HIGH and OE is LOW?

Outputs go high-impedance regardless of OE state when CE is HIGH. The datasheet explicitly states that I/O pins enter high-Z during chip deselect (CE HIGH), even if OE is LOW - preventing bus contention during memory arbitration or power-down sequencing.

Can CY62157ESL-45ZSXIT operate safely at 4.0 V?

No - the datasheet specifies guaranteed operation only within 2.2–3.6 V and 4.5–5.5 V. Operation between 3.6 V and 4.5 V is undefined and not characterized; electrical parameters like VOH, VOL, and timing may fall outside spec, risking data corruption or increased current draw.

How does automatic power-down reduce power in sleep modes?

When CE is held HIGH (or both BHE and BLE are HIGH), the device enters automatic standby, drawing ≤ 8 µA. This occurs without external control signals or clock gating - internal circuitry disables array biasing and output drivers, eliminating dynamic switching current and leakage paths in unused memory cells.