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Infineon Technologies CY62157EV18LL-55BVXI
- Part No.:
- CY62157EV18LL-55BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157EV18LL-55BVXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,906
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Product details
Overview
CY62157EV18LL-55BVXI from Infineon Technologies (formerly Cypress) is a 512K × 16-bit MoBL® CMOS static RAM with 55 ns access time, 1.65–2.25 V supply range, and ultra-low standby current (2 µA typical). It operates in industrial temperature range (–40 °C to +85 °C) and is packaged in a Pb-free 48-ball VFBGA. Used in battery-powered portable electronics requiring fast, low-power memory retention.
For engineers reviewing the CY62157EV18LL-55BVXI datasheet, CY62157EV18LL-55BVXI pinout, CY62157EV18LL-55BVXI application, or CY62157EV18LL-55BVXI equivalent, key selection criteria include VFBGA package compatibility, byte-enable-controlled 16-bit I/O partitioning, automatic CE-based power-down behavior, and guaranteed 55 ns timing at 1.8 V.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive, high-speed memory array with dual chip enable (CE1/CE2) logic for flexible bank selection and deselection-driven automatic power-down. Its architecture supports independent byte-wide writes via BHE/BLE control signals and high-impedance tri-state outputs during deselect, OE HIGH, or active write cycles.
The device uses CMOS process technology optimized for sub-2 V operation, featuring on-die power management that reduces ICC to 2 µA in standby (ISB2) and limits active current to 6 mA at 1 MHz. Data retention is maintained down to 1.0 V with ICCDR ≤ 9 µA, enabling extended hold mode in brown-out conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 16-bit (8 Mbit total); enables single-cycle random access without refresh overhead |
| Access Time | 55 ns max at VCC = 1.65–2.25 V; ensures deterministic timing for real-time microcontroller interfaces |
| Supply Voltage Range | 1.65 V to 2.25 V; compatible with modern low-voltage SoC I/O domains and battery discharge profiles |
| Standby Current | 2 µA typical / 8 µA max (ISB2); extends battery life in sleep-mode portable systems |
| Active Current | 6 mA typical at f = 1 MHz; balances speed and power for burst-access embedded applications |
| Data Retention Voltage | 1.0 V min (VDR); allows memory state preservation during deep-sleep or backup-battery operation |
| Operating Temperature | –40 °C to +85 °C (Industrial grade); validated for automotive infotainment and industrial HMI use |
Pinout & Package
Package: 48-ball VFBGA (5 mm × 6 mm, 0.5 mm pitch), RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word decoding; A18 required for top half of memory map |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled when BLE = LOW; isolated during high-byte operations |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled when BHE = LOW; independent read/write control per byte |
| CE1, CE2 | Chip Enable Inputs | Active-LOW CE1 and active-HIGH CE2 form dual-enable logic; either CE1 HIGH or CE2 LOW forces standby |
| OE | Output Enable | Active-LOW; places I/O pins in high-Z when HIGH, enabling bus sharing in multi-device systems |
| WE | Write Enable | Active-LOW; initiates write cycle only when CE1 LOW, CE2 HIGH, and WE LOW simultaneously |
| BHE, BLE | Byte Enable Controls | Active-LOW signals enabling high/low byte writes independently; supports 8-bit or 16-bit host interfaces |
| VCC, VSS | Power Supply | Single 1.65–2.25 V supply with dedicated ground balls; decoupling required per VFBGA layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces system-level energy consumption by limiting ISB2 to 8 µA max and ICC to 7 mA max at fmax |
| Dual Chip Enable Logic (CE1/CE2) | Enables seamless integration into multi-SRAM memory maps with hierarchical enable control and automatic power gating |
| Independent Byte Write Control (BHE/BLE) | Allows partial-word writes without read-modify-write cycles, improving efficiency in 8-bit peripheral interfacing |
| Automatic Power-Down on Deselect | Eliminates external power sequencing logic by entering standby when CE1 HIGH or CE2 LOW, reducing BOM count |
| VFBGA Package with NC Pins | 48-ball footprint supports high-density PCB layouts; unconnected pins (A16, A18, NC) simplify routing and reduce stub effects |
Applications
| Smartphone Baseband Memory | Industrial PLC Data Buffer |
|---|---|
Use Scenario: Storing real-time sensor logs and firmware scratchpad in LTE/5G modem subsystems with tight power budgets. IC Role / Device Role / Timing Role: High-speed, low-leakage SRAM serving as primary working memory for baseband DSP cores. Use Value: 55 ns access time meets burst-read latency requirements while 2 µA standby current extends battery runtime between transmissions. | Use Scenario: Holding transient I/O status and configuration registers in programmable logic controllers operating in harsh environments. IC Role / Device Role / Timing Role: Industrial-grade static RAM providing deterministic read/write response under voltage fluctuation and thermal stress. Use Value: Guaranteed –40 °C to +85 °C operation and 1.0 V data retention support reliable state-hold during brown-out events. |
| Wearable Health Monitor Cache | Automotive ADAS Pre-Processing Buffer |
Use Scenario: Caching biometric sampling data (ECG, SpO₂) prior to Bluetooth LE transmission in compact wearables. IC Role / Device Role / Timing Role: Low-voltage (1.8 V) SRAM interfaced directly to ARM Cortex-M0+ MCU GPIOs with byte-enable flexibility. Use Value: VFBGA package minimizes board area; BLE/BHE control allows efficient 8-bit sensor data packing without bus widening. | Use Scenario: Temporarily storing frame metadata and feature vectors from camera radar fusion modules before GPU offload. IC Role / Device Role / Timing Role: Fast-access buffer synchronizing heterogeneous sensor inputs with deterministic 55 ns latency. Use Value: Dual CE logic enables dynamic power gating during idle frames, cutting system-level leakage by >90% vs. always-on alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-voltage, high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62157DV18LL-55BVXI | Same 512K×16 organization and 55 ns speed, but rated for 1.7–1.95 V only (narrower VCC range) | Limited to 1.8 V nominal systems; not suitable for wide-input-voltage designs or battery-discharge scenarios below 1.7 V | Select when system VCC is tightly regulated at 1.8 V and cost sensitivity outweighs voltage margin needs |
| AS6C8016-55TIN | 55 ns speed, 512K×16, but requires 2.7–3.6 V supply and uses TSOP-II package (not VFBGA) | Incompatible with sub-2 V platforms; larger footprint increases PCB area and limits portable design scalability | Choose only for legacy 3.3 V industrial boards where package conversion is acceptable and voltage headroom exists |
Compared with CY62157DV18LL-55BVXI and AS6C8016-55TIN, the CY62157EV18LL-55BVXI uniquely supports 1.65–2.25 V operation in VFBGA, enabling direct integration into modern ultra-low-power SoC ecosystems without level-shifting or packaging compromise.
Availability
CY62157EV18LL-55BVXI is available at Aetrix Electronics and suitable for smartphone baseband memory, industrial PLC data buffering, wearable health monitor caching, and automotive ADAS pre-processing requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY62157EV18LL-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.
This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-speed memory applications in portable and energy-constrained embedded systems.
FAQ
What is the minimum VCC required to retain data in CY62157EV18LL-55BVXI?
The device guarantees data retention down to 1.0 V (VDR), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤ 9 µA, allowing extended hold mode during brown-out or backup-battery operation without data loss.
How does automatic power-down activate in this SRAM?
Automatic power-down triggers when CE1 is HIGH or CE2 is LOW - no additional control signals needed. The internal circuitry reduces ICC to ISB2 levels (≤ 8 µA) immediately upon deselection, eliminating need for external power-gating logic or software intervention.
Can CY62157EV18LL-55BVXI interface directly with a 1.8 V microcontroller without level shifters?
Yes. Its 1.65–2.25 V VCC range and TTL-compatible input thresholds (VIH ≥ 1.4 V, VIL ≤ 0.4 V) ensure native interoperability with 1.8 V logic families. All I/Os are designed for single-supply operation within this window.
Is the 48-ball VFBGA package lead-free and RoHS compliant?
Yes. The CY62157EV18LL-55BVXI uses a Pb-free VFBGA package fully compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) reflow profile.
CY62157EV18LL-55BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 2.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157EV18LL-55BVXI FAQ
1.How can I place an order for CY62157EV18LL-55BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157EV18LL-55BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157EV18LL-55BVXI reliable?
The price and inventory of CY62157EV18LL-55BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157EV18LL-55BVXI is usually 5 days.
3.What payment methods are accepted for CY62157EV18LL-55BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157EV18LL-55BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157EV18LL-55BVXI?
CY62157EV18LL-55BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157EV18LL-55BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157EV18LL-55BVXI?
For technical support, including CY62157EV18LL-55BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157EV18LL-55BVXI requirements.
6.How does Aetrix verify that CY62157EV18LL-55BVXI is sourced from the original manufacturer or authorized distributors?
All CY62157EV18LL-55BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157EV18LL-55BVXI meets industry standards.
7.What is the process for return or replacement of CY62157EV18LL-55BVXI?
All CY62157EV18LL-55BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62157EV18LL-55BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157EV18LL-55BVXI part is unused and in its original packaging.
Return procedure for CY62157EV18LL-55BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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