Infineon Technologies CY62157EV18LL-55BVXIT

Overview

CY62157EV18LL-55BVXIT from Infineon Technologies (formerly Cypress) is a 8-Mbit (512K × 16) low-voltage CMOS static RAM with 55 ns access time, 1.65–2.25 V supply range, and ultra-low standby current (max 8 µA). It serves as main or buffer memory in portable battery-powered systems requiring fast random access and minimal power during sleep modes, such as cellular handsets and handheld medical monitors.

For engineers reviewing the CY62157EV18LL-55BVXIT datasheet, CY62157EV18LL-55BVXIT pinout, CY62157EV18LL-55BVXIT application, or CY62157EV18LL-55BVXIT equivalent, key selection criteria include its MoBL®-optimized active/standby current profile, VFBGA-48 package compatibility, byte-level write enable (BHE/ BLE), and automatic CE-driven power-down behavior under static address conditions.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive 512K × 16-bit array with dual chip enables (CE1/CE2) and independent byte write controls (BHE/BLE), enabling flexible memory partitioning and partial-word writes. Its CMOS architecture supports full rail-to-rail input thresholds (VIH ≥ 1.4 V, VIL ≤ 0.4 V at VCC = 1.65–2.25 V) and guarantees 55 ns read/write cycle timing across industrial temperature (–40 °C to +85 °C).

Power management relies on hardware-triggered automatic power-down when CE1 is HIGH or CE2 is LOW - reducing ICC to ≤8 µA without external control logic. Data retention is maintained down to 1.0 V VCC, with ICCDR ≤9 µA, supporting brown-out operation in energy-constrained embedded systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, moisture-sensitive level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage, low-power SRAM applications.

Compared with IS62WV51216BLL-55NLI and R1LV51216ASB-5SI#S0, CY62157EV18LL-55BVXIT delivers the lowest guaranteed standby current (8 µA), smallest VFBGA footprint, and unique 1.0 V data retention - making it optimal for ultra-low-power portable and automotive applications where battery life and physical size are critical.

Availability

CY62157EV18LL-55BVXIT is available at Aetrix Electronics and suitable for cellular baseband processing, portable medical monitoring, industrial HMI display controllers, and automotive infotainment head units requiring stable component supply across extended product lifecycles.

Supply support for CY62157EV18LL-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for automotive, industrial, and IoT markets.

CY62157EV18 belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-speed memory in portable and energy-sensitive embedded systems.

FAQ

What is the minimum VCC required to retain data in CY62157EV18LL-55BVXIT?

The device guarantees data retention down to 1.0 V VCC, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤9 µA, and no external refresh or backup power is needed - enabling operation during brown-out events or battery voltage sag before shutdown.

How does automatic power-down activate, and does it require software control?

Automatic power-down activates purely in hardware when CE1 is driven HIGH or CE2 is driven LOW - no firmware intervention or clock gating is required. The internal power-down circuit reduces ICC to ≤8 µA within tCDR (chip deselect to data retention time), which is not specified but occurs within nanoseconds per functional description.

Can CY62157EV18LL-55BVXIT operate reliably at 1.65 V VCC with 55 ns timing?

Yes - all AC specifications including 55 ns access time, VIH/VIL thresholds, and ICC/ISB limits are fully characterized and guaranteed over the entire 1.65–2.25 V range. Electrical Characteristics tables explicitly list test conditions at VCC = 1.65 V, confirming full-speed operation at minimum supply.

Are the NC pins on the VFBGA package required to be grounded or left floating?

The three NC pins (A16, A18, and one adjacent to VSS) are not connected internally and must be left electrically floating per datasheet Note 2. Grounding them may cause unintended coupling or violate thermal/mechanical design rules for the VFBGA package; routing or solder mask should isolate these balls.