My Inquiry
My Account
Infineon Technologies CY62157EV30LL-45BVI
- Part No.:
- CY62157EV30LL-45BVI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157EV30LL-45BVI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:320
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62157EV30LL-45BVI from Infineon Technologies (formerly Cypress) is a 8-Mbit CMOS static RAM organized as 512K × 16, operating at 45 ns access time with 2.2–3.6 V supply voltage and industrial temperature range (–40 °C to +85 °C). It supports byte-wide or word-wide access via BHE/ BLE controls and delivers ultra-low standby current (2 µA typical) for battery-sensitive portable electronics.
For engineers reviewing the CY62157EV30LL-45BVI datasheet, CY62157EV30LL-45BVI pinout, CY62157EV30LL-45BVI application, or CY62157EV30LL-45BVI equivalent, key selection criteria include its dual-configurable memory organization (512K × 16 / 1M × 8), automatic power-down on deselect, TSOP I package compatibility, and MoBL® low-power architecture optimized for mobile and automotive infotainment systems.
Technical Context
The device implements a high-speed SRAM core with independent byte enable (BHE/ BLE) logic enabling selective 8-bit writes within a 16-bit data bus, reducing unnecessary bus activity. Its CE1/CE2 dual chip enable architecture allows hierarchical memory mapping and seamless expansion in multi-chip systems without external gating logic.
Automatic power-down is triggered by any of three conditions: CE1 HIGH, CE2 LOW, or both BHE and BLE HIGH - ensuring sub-µA retention when idle. The internal power control circuitry maintains data integrity down to 1.5 V VCC while limiting ICCDR to 8 µA max under data retention mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16 or 1M × 8 configurable) |
| Access Time | 45 ns - guarantees timing margin for 16.7 MHz burst reads in microcontroller interfaces |
| Supply Voltage | 2.2 V to 3.6 V - compatible with single-supply 2.5 V/3.3 V logic domains |
| Standby Current | 2 µA typical, 8 µA max - enables >1-year battery life in always-on sensor nodes |
| Operating Current | 6 mA typical at 1 MHz - supports low-frequency embedded control with minimal thermal load |
| Temperature Range | –40 °C to +85 °C - qualified for industrial and automotive-A environments |
| Data Retention Voltage | 1.5 V minimum - allows graceful shutdown and fast wake-up from deep sleep |
Pinout & Package
Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, surface-mountable with 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; A19 used only in 1M×8 mode |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 and I/O8–I/O15 independently controllable via BLE/BHE |
| CE1, CE2 | Chip Enable Inputs | Dual active-Low/active-High enables allow hierarchical decoding and automatic power-down on either signal transition |
| OE | Output Enable | Active-Low control for output buffer; high-Z state enforced within 18 ns of OE HIGH |
| WE | Write Enable | Active-Low write strobe; initiates write cycle only when CE1 LOW and CE2 HIGH |
| BHE, BLE | Byte Enable Controls | Active-Low signals selecting high/low byte for partial writes; both HIGH forces auto-standby |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply; dual VSS pins reduce ground bounce in high-speed operation |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 6 mA at 1 MHz and standby to 2 µA typical - extends battery runtime in handheld devices |
| Dual Chip Enable Logic (CE1/CE2) | Enables seamless memory expansion across multiple SRAMs without external decode logic or glue logic |
| Configurable Organization (512K×16 / 1M×8) | One footprint supports two memory mappings - simplifies BOM management and design reuse |
| Automatic Power-Down on Deselect | Enters sub-µA retention state when CE1 HIGH, CE2 LOW, or both BHE/ BLE HIGH - eliminates need for software-controlled sleep modes |
| CMOS-Compatible Input/Output Levels | Fully compliant with 2.5 V and 3.3 V logic families - ensures interoperability with modern MCUs and FPGAs |
Applications
| Portable Medical Monitors | Automotive Instrument Clusters |
|---|---|
Use Scenario: Real-time waveform buffering and display refresh in battery-powered ECG/SpO₂ monitors. IC Role / Device Role / Timing Role: High-speed, low-power SRAM acting as frame buffer between ADC and display controller. Use Value: 45 ns access time enables 60 Hz display updates; 2 µA standby current preserves battery charge during patient standby periods. | Use Scenario: Graphics overlay storage and HUD rendering in digital instrument clusters. IC Role / Device Role / Timing Role: Offloads GPU memory bandwidth by caching frequently accessed UI assets and gauge textures. Use Value: Dual-byte enable allows partial texture updates without full frame rewrite; TSOP I package fits constrained PCB space behind cluster bezel. |
| Industrial PLC Edge Controllers | Wireless Sensor Gateways |
Use Scenario: Local program execution and I/O state caching in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding ladder logic variables and real-time process data. Use Value: –40 °C to +85 °C rating ensures reliability in unconditioned cabinets; 45 ns read cycle meets deterministic scan-time requirements. | Use Scenario: Message queuing and protocol translation buffer in LoRaWAN/NB-IoT gateways. IC Role / Device Role / Timing Role: Temporary packet staging area before encryption and RF transmission. Use Value: Automatic power-down reduces average gateway power by >40% during idle intervals between uplink bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV51216AL-10TLI | 10 ns faster access (35 ns), but higher standby current (15 µA typ) and narrower voltage range (3.0–3.6 V) | Preferred where speed dominates over battery life; not suitable for 2.5 V systems | Select when system clock exceeds 20 MHz and power budget allows ≥10 µA standby |
| AS6C4008-55ZIN | Slower (55 ns), wider temp range (–40 °C to +125 °C), same 2.2–3.6 V range and 2 µA standby | Required for under-hood automotive modules needing extended temperature support | Choose for engine bay or transmission control units where 125 °C operation is mandatory |
Compared with IS61LV51216AL-10TLI and AS6C4008-55ZIN, the CY62157EV30LL-45BVI uniquely balances 45 ns performance, 2.2 V minimum supply, and industrial-grade thermal stability - making it optimal for cost-sensitive, battery-constrained edge controllers where neither extreme speed nor extended temperature is required.
Availability
CY62157EV30LL-45BVI is available at Aetrix Electronics and suitable for portable medical monitors, automotive instrument clusters, industrial PLC edge controllers, and wireless sensor gateways requiring stable component supply across long production lifecycles.
Supply support for CY62157EV30LL-45BVI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and automotive qualification heritage.
This part belongs to the MoBL® (More Battery Life™) SRAM product line, designed specifically for ultra-low-power, high-reliability embedded systems where extended battery life and robust operation across wide temperature ranges are critical.
FAQ
What is the correct configuration for using CY62157EV30LL-45BVI as a 512K × 16 device?
The device operates in 512K × 16 mode by default in the 48-pin TSOP I package. Ensure BYTE pin is tied HIGH; BHE and BLE must be actively driven for byte-select functionality. Address lines A0–A18 are used, and A19 is unused. No external logic is required beyond proper CE1/CE2 and OE control per the truth table on page 13 of the datasheet.
Does CY62157EV30LL-45BVI support true 2.5 V operation?
Yes - the device is fully specified from 2.2 V to 3.6 V, including all AC and DC parameters at 2.5 V nominal. VOH is guaranteed ≥2.0 V and VOL ≤0.4 V at 2.5 V, ensuring reliable interfacing with standard 2.5 V logic families without level shifters.
How does automatic power-down activate, and what is the recovery time?
Power-down activates when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH. Recovery to full operation requires tPD = 45 ns (max) after CE1 goes LOW and CE2 goes HIGH. No reset or initialization sequence is needed - the device resumes normal operation transparently upon re-enable.
Can CY62157EV30LL-45BVI be used in place of CY62157DV30?
Yes - the datasheet explicitly states pin compatibility with CY62157DV30. Both share identical pinout, timing, and functional behavior. However, CY62157EV30LL-45BVI offers improved standby current (2 µA vs. 5 µA typical) and extended voltage range (2.2–3.6 V vs. 2.7–3.6 V), making it a direct, enhanced drop-in replacement.
CY62157EV30LL-45BVI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157EV30LL-45BVI FAQ
1.How can I place an order for CY62157EV30LL-45BVI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157EV30LL-45BVI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157EV30LL-45BVI reliable?
The price and inventory of CY62157EV30LL-45BVI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157EV30LL-45BVI is usually 5 days.
3.What payment methods are accepted for CY62157EV30LL-45BVI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157EV30LL-45BVI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157EV30LL-45BVI?
CY62157EV30LL-45BVI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157EV30LL-45BVI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157EV30LL-45BVI?
For technical support, including CY62157EV30LL-45BVI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157EV30LL-45BVI requirements.
6.How does Aetrix verify that CY62157EV30LL-45BVI is sourced from the original manufacturer or authorized distributors?
All CY62157EV30LL-45BVI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157EV30LL-45BVI meets industry standards.
7.What is the process for return or replacement of CY62157EV30LL-45BVI?
All CY62157EV30LL-45BVI units undergo pre-shipment inspection (PSI). If there is an issue with CY62157EV30LL-45BVI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157EV30LL-45BVI part is unused and in its original packaging.
Return procedure for CY62157EV30LL-45BVI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62157EV30LL-45BVI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
