Infineon Technologies CY62157EV30LL-45BVIT

Overview

CY62157EV30LL-45BVIT from Infineon Technologies (formerly Cypress) is a high-performance 8-Mbit CMOS static RAM organized as 512K × 16, operating at 45 ns access time with 2.2–3.6 V supply voltage, ultra-low standby current (2 µA typical), and industrial temperature range (–40 °C to +85 °C). It supports byte-wide or word-wide memory expansion in portable battery-powered systems such as cellular handsets and handheld medical devices.

For engineers reviewing the CY62157EV30LL-45BVIT datasheet, CY62157EV30LL-45BVIT pinout, CY62157EV30LL-45BVIT application, or CY62157EV30LL-45BVIT equivalent, key selection criteria include its dual 512K×16/1M×8 configurability, automatic power-down on chip deselect, CMOS-compatible I/O timing, and VFBGA/TSOP I package options for space-constrained PCB layouts.

Technical Context

The device implements a fully static 512K × 16 SRAM array with independent byte enable (BHE/BLE) control, enabling selective 8-bit writes without read-modify-write cycles. Its dual chip enable (CE1/CE2) architecture allows hierarchical memory banking and seamless expansion across multiple devices.

Power management is handled via automatic CE-triggered power-down: when CE1 is HIGH or CE2 is LOW (or both BHE and BLE are HIGH), the core enters ultra-low-ISB2 mode (≤8 µA max at 3.6 V), while outputs enter high-impedance state. Data retention remains valid down to 1.5 V VCC.

Key Specifications

Pinout & Package

Package: 48-ball VFBGA (ball pitch 0.5 mm), RoHS-compliant, moisture sensitivity level 3. Pinout validated per Infineon Document No. 38-05445 Rev. *S Figure 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed low-power SRAM applications.

Compared with IS62WV51216BLL-45NLI, CY62157EV30LL-45BVIT delivers wider voltage flexibility and lower leakage; versus CY62157DV30LL-45BVIT, it adds automotive qualification and cuts standby current nearly in half - critical for energy-constrained edge nodes.

Availability

CY62157EV30LL-45BVIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, automotive ADAS camera modules, and handheld test equipment requiring stable component supply across long-lifecycle deployments.

Supply support for CY62157EV30LL-45BVIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability data buffering in battery-constrained portable and automotive electronics.

FAQ

What is the minimum VCC required to retain data in CY62157EV30LL-45BVIT?

Data retention is guaranteed down to 1.5 V VCC when CE1 is HIGH, CE2 is LOW, and both BHE and BLE are HIGH. At this voltage, ICCDR remains ≤8 µA (industrial grade), allowing extended hold time during brown-out events or backup battery operation without data corruption.

Can CY62157EV30LL-45BVIT operate in 1M×8 mode using the 48-ball VFBGA package?

No. The 1M×8 configuration requires the BYTE pin (present only in 48-pin TSOP I) to be tied LOW. The VFBGA package lacks the BYTE pin and is hardwired for 512K×16 operation; attempting 1M×8 addressing will result in address wraparound and undefined behavior.

How does automatic power-down activate when both CE1 and CE2 are used?

Power-down triggers if CE1 is HIGH OR CE2 is LOW (logical OR condition). CE2 LOW takes precedence: even if CE1 is LOW, asserting CE2 LOW forces immediate entry into ISB2 standby mode (<8 µA), overriding all other control signals including OE and WE.

Is the 45 ns access time guaranteed across the full industrial temperature range?

Yes. The 45 ns tAA (address-to-data-valid) and tRC (read cycle time) are maximum specifications over –40 °C to +85 °C and VCC = 2.2–3.6 V. No derating is required for thermal or voltage variation within these bounds, simplifying timing margin analysis.