Infineon Technologies CY62157EV30LL-45BVXIT

Overview

CY62157EV30LL-45BVXIT from Infineon Technologies (formerly Cypress) is a 8-Mbit MoBL® CMOS static RAM organized as 512K × 16, operating at 45 ns access time over –40 °C to +85 °C industrial temperature range, with 2.2 V–3.6 V supply voltage and ultra-low 2 µA typical standby current. It supports byte-wide (BHE/ BLE) and chip-select (CE1/CE2) control for embedded memory expansion in portable and automotive systems.

For engineers reviewing the CY62157EV30LL-45BVXIT datasheet, CY62157EV30LL-45BVXIT pinout, CY62157EV30LL-45BVXIT application, or CY62157EV30LL-45BVXIT equivalent, key selection criteria include TSOP I package compatibility, 45 ns read/write timing, dual CE architecture, low-voltage operation down to 2.2 V, and automatic power-down behavior during deselection.

Technical Context

This SRAM implements a dual-chip-enable (CE1 LOW & CE2 HIGH) activation logic with independent byte enable (BHE/BLE) control for 16-bit data bus partitioning. Its CMOS architecture enables full rail-to-rail input thresholds (VIH = 2.2 V min at VCC ≥ 2.7 V) and guarantees 45 ns tRC and tAA across industrial temperature and voltage ranges.

The device features automatic power-down when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH, reducing ICC to ≤8 µA max. Data retention is supported down to 1.5 V VCC with ≤8 µA ICCDR, and tri-state output timing (tHZOE = 18 ns max, tLZOE = 5 ns) ensures clean bus sharing in multi-device systems.

Key Specifications

Pinout & Package

Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, 12.0 mm × 20.0 mm body size, 0.5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61WV51216BLL-10MLI and CY62157DV30LL-45ZSXI, CY62157EV30LL-45BVXIT uniquely combines 2.2–3.6 V operation, 2 µA typical standby, and AEC-Q100 Automotive-A qualification - making it optimal for next-generation battery-constrained and automotive-qualified systems.

Availability

CY62157EV30LL-45BVXIT is available at Aetrix Electronics and suitable for portable medical monitors, automotive ADAS camera modules, and industrial PLC I/O expansion cards requiring stable component supply, long-term lifecycle support, and guaranteed automotive-grade qualification.

Supply support for CY62157EV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions formerly developed by Cypress Semiconductor.

This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-speed parallel memory in portable, automotive, and industrial edge devices where extended battery life and thermal resilience are critical.

FAQ

What is the minimum VCC required to retain data in CY62157EV30LL-45BVXIT?

Data retention is guaranteed down to VCC = 1.5 V, with ICCDR ≤ 8 µA max at that voltage. This allows the device to maintain memory contents during brown-out or supercapacitor backup scenarios, provided CE1 is HIGH or CE2 is LOW and BHE/BLE are both HIGH to enter retention mode.

Can CY62157EV30LL-45BVXIT operate in 1M × 8 mode, and what changes are required?

Yes - in the 48-pin TSOP I package, tying the BYTE pin LOW configures the device as 1M × 8. In this mode, A19 appears on pin 45, while BHE, BLE, and I/O8–I/O14 become unused. The address mapping shifts to A0–A19, and only I/O0–I/O7 remain active for data transfer.

How does the dual CE architecture (CE1/CE2) improve system design versus single-CE SRAMs?

The CE1 (active-LOW) and CE2 (active-HIGH) pairing eliminates external inverters or NAND gates needed to generate chip-select logic in multi-SRAM systems. It also enables hierarchical decoding - e.g., CE2 driven by upper address bits and CE1 by lower decode logic - simplifying memory map partitioning and reducing board-level component count.

Is CY62157EV30LL-45BVXIT pin-compatible with CY62157DV30LL-45ZSXI?

Yes - both share identical 48-pin TSOP I pinout, address/data/bus signal assignments, and functional behavior. However, CY62157EV30LL-45BVXIT adds Automotive-A qualification, tighter ISB2 (8 µA max vs. 12 µA), and enhanced data retention specs, making it a direct drop-in replacement with improved reliability margins.