Infineon Technologies CY62157EV30LL-45ZSXA

Overview

CY62157EV30LL-45ZSXA from Infineon Technologies (formerly Cypress) is a 8-Mbit MoBL® CMOS static RAM organized as 512K × 16, operating at 45 ns access time over –40 °C to +85 °C industrial/automotive-A range with 2.2–3.6 V supply. It delivers ultra-low standby current (2 µA typical), supports byte-wide and word-wide configurations via BHE/BLE controls, and is used in battery-sensitive portable electronics requiring deterministic timing and low-power retention.

For engineers reviewing the CY62157EV30LL-45ZSXA datasheet, CY62157EV30LL-45ZSXA pinout, CY62157EV30LL-45ZSXA application, or CY62157EV30LL-45ZSXA equivalent, this page provides verified package mapping (48-pin TSOP I), validated pin functions including dual chip enables (CE1/CE2), byte enable logic (BHE/BLE), and confirmed power-down behavior under deselected conditions - all critical for memory interface design and BOM continuity planning.

Technical Context

This SRAM implements a dual-chip-enable architecture (CE1/CE2) with independent byte enable control (BHE/BLE) to support flexible 16-bit or split 8-bit data bus interfacing. Its automatic power-down circuit activates when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - reducing ICC to ≤8 µA without external control logic.

The device uses complementary metal-oxide-semiconductor (CMOS) process technology optimized for speed-power trade-off, delivering 45 ns tAA and tRC at 3.6 V while maintaining 10 pF input/output capacitance and 2.0 V VOH minimum under 0.1 mA load - enabling direct interfacing with 3.3 V and 2.5 V microcontrollers and FPGAs.

Key Specifications

Pinout & Package

Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, surface-mount, 12.0 mm × 20.0 mm body size.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS62WV51216BLL-45NLI and NCS25716-45G, CY62157EV30LL-45ZSXA uniquely balances ultra-low standby power, flexible byte control, and dual CE architecture - making it optimal for portable and automotive systems requiring both energy efficiency and interface adaptability without non-volatility overhead.

Availability

CY62157EV30LL-45ZSXA is available at Aetrix Electronics and suitable for portable medical devices, automotive body control modules, industrial PLC expansion cards, and wireless sensor gateways requiring stable component supply across extended product lifecycles.

Supply support for CY62157EV30LL-45ZSXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong focus on reliability and industrial-grade qualification.

CY62157EV30 belongs to the MoBL® (More Battery Life) SRAM product line, designed specifically for ultra-low-power embedded systems where extended battery life and deterministic timing are critical - especially in portable, automotive, and industrial edge devices.

FAQ

What is the correct biasing for BHE and BLE in 512K×16 mode?

In 512K×16 configuration, BHE and BLE must be driven active-LOW to enable both upper and lower bytes simultaneously. Leaving either HIGH disables its respective 8-bit segment, resulting in half-bus operation. The BYTE pin (TSOP I only) must be tied HIGH to activate this mode - tying it LOW configures the device as 1M×8, repurposing pin 45 as A19.

Does CY62157EV30LL-45ZSXA require external pull-ups on CE1 or CE2?

No external pull-ups are required. CE1 is active-LOW and CE2 is active-HIGH; both inputs meet CMOS voltage thresholds across the full 2.2–3.6 V supply range. To enter standby, drive CE1 HIGH (≥VCC – 0.2 V) or CE2 LOW (≤0.2 V) - internal circuitry ensures clean power-down without external components.

Can this SRAM operate reliably at 2.2 V with 45 ns timing?

Yes. All AC specifications including tAA = 45 ns max and tRC = 45 ns max are fully guaranteed over the entire 2.2–3.6 V supply range and –40 °C to +85 °C temperature range. The device's CMOS design maintains timing integrity at minimum VCC, eliminating need for voltage margining in low-power designs.

How does automatic power-down interact with OE and WE during deselection?

Automatic power-down triggers when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH - independent of OE and WE states. When active, ICC drops to ≤8 µA and all I/Os enter high-impedance regardless of OE/WE levels. OE only controls output drivers; it does not influence internal power state or data retention.