Infineon Technologies CY62157EV30LL-45ZSXAT

Overview

CY62157EV30LL-45ZSXAT from Infineon Technologies (formerly Cypress) is a high-speed, low-power 8-Mbit CMOS static RAM organized as 512K × 16 bits, operating at 45 ns access time over –40 °C to +85 °C industrial temperature range with 2.2 V–3.6 V supply voltage and ultra-low 2 µA typical standby current. It supports byte-wide (BHE/ BLE) and chip-select (CE1/CE2) control for memory expansion in portable and embedded systems.

For engineers reviewing the CY62157EV30LL-45ZSXAT datasheet, CY62157EV30LL-45ZSXAT pinout, CY62157EV30LL-45ZSXAT application, or CY62157EV30LL-45ZSXAT equivalent, key selection criteria include its dual 44-pin TSOP II / 48-pin TSOP I package options, MoBL® ultra-low active power (6 mA at 1 MHz), automatic power-down on deselect, and configurable 512K×16 or 1M×8 organization.

Technical Context

The device implements a fully decoded 512K × 16 SRAM array with independent byte enable (BHE/BLE) logic enabling selective 8-bit writes without read-modify-write cycles. Its CE1/CE2 dual-chip-enable architecture allows hierarchical memory mapping and seamless expansion across multiple devices.

Power management is handled via automatic transition to ultra-low ISB2 standby mode (≤8 µA) when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - eliminating external power control logic. All timing parameters are guaranteed over full VCC (2.2–3.6 V) and temperature (–40 °C to +85 °C) ranges per Industrial grade specification.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP II), 360 mil width, RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed low-power SRAM applications.

Compared with IS61WV51216EDBLL-45BLI, CY62157EV30LL-45ZSXAT offers broader voltage tolerance critical for battery-backed systems; versus CY62157EV30LL-45ZSXI, it delivers identical performance in a smaller 44-pin TSOP II footprint ideal for space-constrained telematics modules.

Availability

CY62157EV30LL-45ZSXAT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and automotive telematics units requiring stable component supply, long-term lifecycle assurance, and automotive-grade qualification.

Supply support for CY62157EV30LL-45ZSXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and automotive focus.

This part belongs to the MoBL® (More Battery Life™) SRAM product line, designed specifically for ultra-low-power portable and battery-critical applications where extended runtime and reliable data retention under voltage droop are essential.

FAQ

What is the minimum VCC required to retain data in CY62157EV30LL-45ZSXAT?

Data retention is guaranteed down to 1.5 V VCC, with ICCDR (data retention current) max 8 µA at that voltage. The device maintains stored data without refresh as long as VCC remains ≥1.5 V and CE1/CE2/BHE/BLE are held in valid CMOS logic states per datasheet Section 6. This enables robust backup operation using small supercapacitors or coin cells.

Does CY62157EV30LL-45ZSXAT support true 1M×8 configuration in its 44-pin TSOP II package?

No. The 44-pin TSOP II package lacks the BYTE pin required for 1M×8 reconfiguration. Only the 48-pin TSOP I variant (e.g., CY62157EV30LL-45ZSXI) supports 1M×8 mode via the BYTE pin. The 44-pin version is fixed at 512K×16 organization and provides dedicated I/O0–I/O15 pins without multiplexing.

How does automatic power-down work when both CE1 and CE2 are used?

Automatic power-down activates when CE1 is HIGH OR CE2 is LOW - either condition alone forces the device into ISB2 standby mode (≤8 µA). This allows flexible control: CE1 can serve as primary enable while CE2 acts as secondary disable, or vice versa. No external logic is needed; the internal circuitry detects these states and gates VCC internally within 45 ns.

Can I/O pins be left floating during standby mode?

Yes. When the device is deselected (CE1 HIGH or CE2 LOW), all I/O0–I/O15 pins automatically enter high-impedance state regardless of OE, WE, or BHE/BLE status. Floating I/Os pose no risk of contention or leakage, and no pull-up/down resistors are required - simplifying PCB layout and reducing BOM cost in battery-sensitive designs.