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Infineon Technologies CY62157EV30LL-45ZSXI
- Part No.:
- CY62157EV30LL-45ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62157EV30LL-45ZSXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,840
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Product details
Overview
CY62157EV30LL-45ZSXI from Infineon Technologies (formerly Cypress) is a high-speed, low-power 8-Mbit CMOS static RAM organized as 512K × 16, operating at 45 ns access time with 2.2–3.6 V supply and industrial temperature range (–40 °C to +85 °C). It supports byte-wide or word-wide configurations via BHE/ BLE controls and delivers ultra-low standby current (2 µA typical) for battery-sensitive portable systems.
For engineers reviewing the CY62157EV30LL-45ZSXI datasheet, CY62157EV30LL-45ZSXI pinout, CY62157EV30LL-45ZSXI application, or CY62157EV30LL-45ZSXI equivalent, this SRAM is selected for embedded memory expansion where deterministic timing, dual chip enable control, and automatic power-down on deselect are required in space-constrained TSOP I layouts.
Technical Context
The device implements a fully static 512K × 16 RAM array with independent byte enable (BHE/ BLE) logic enabling selective 8-bit writes without read-modify-write cycles. Its dual CE architecture (CE1/CE2) allows hierarchical memory banking and seamless integration into multi-chip select systems.
Automatic power-down activates when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - reducing ICC to ≤8 µA while maintaining data retention down to 1.5 V. The 45 ns tRC and 22 ns tDOE support real-time microcontroller interfacing at up to ~22 MHz sustained read throughput.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 16 (8 Mbit), configurable as 1M × 8 in TSOP I with BYTE pin tied LOW |
| Access Time (tAA) | 45 ns max - guarantees deterministic read latency for 22 MHz bus clocking |
| Supply Voltage Range | 2.20 V to 3.60 V - compatible with 2.5 V and 3.3 V logic domains without level shifting |
| Standby Current (ISB2) | 8 µA max (Industrial) - enables >1-year battery life in always-on sensor nodes |
| Operating Current (ICC) | 25 mA max at fmax - supports burst reads without thermal throttling in compact PCBs |
| Data Retention Voltage | 1.5 V min - retains contents during brown-out or controlled power-down sequences |
| Temperature Range | –40 °C to +85 °C - qualified for industrial control and automotive infotainment head units |
Pinout & Package
Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, surface-mountable with 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; A19 available only in 1M×8 mode (TSOP I, BYTE = LOW) |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled by BLE = LOW; high-impedance when deselected or during write |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled by BHE = LOW; isolated from low byte for true byte-select operation |
| CE1 / CE2 | Chip Enable Controls | Dual active-Low enables: CE1 LOW + CE2 HIGH activates device; CE2 LOW forces standby regardless of CE1 |
| OE | Output Enable | Active-Low control for output drivers; high-Z state entered within 18 ns of OE HIGH |
| WE | Write Enable | Active-Low signal initiating write cycle; minimum pulse width 35 ns ensures reliable cell programming |
| BHE / BLE | Byte High/Low Enable | Independent active-Low enables for high/low data bytes; both HIGH places I/Os in high-Z |
| VCC / VSS | Power / Ground | Two VCC pins (pins 24, 48) and two VSS pins (pins 23, 47) reduce IR drop and improve noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 2 µA typical ISB2 enables multi-year operation on coin-cell batteries in IoT edge sensors |
| Dual Chip Enable (CE1/CE2) Logic | Enables hierarchical memory mapping - CE2 used as bank select, CE1 as per-device enable in multi-SRAM systems |
| Independent Byte Enables (BHE/BLE) | Eliminates need for external byte masking logic; supports mixed 8-bit/16-bit peripheral interfacing |
| Automatic Power-Down on Deselect | Enters sub-8 µA standby within 45 ns of CE deassertion - no software overhead or external control required |
| TSOP I Pin Compatibility | Pins identical to CY62157DV30 - allows drop-in replacement in legacy designs without layout change |
Applications
| Industrial PLC Data Buffer | Automotive ADAS Camera Frame Buffer |
|---|---|
|
Use Scenario: Real-time buffering of sensor fusion data between MCU and FPGA in programmable logic controllers. IC Role / Device Role / Timing Role: High-reliability, low-latency SRAM acting as dual-port-accessible scratchpad memory with deterministic 45 ns read/write timing. Use Value: Dual CE and byte enables allow concurrent access from ARM Cortex-M7 and Xilinx Zynq PS/PL domains without arbitration logic. |
Use Scenario: Temporary storage of uncompressed image frames from 1.3 MP camera modules before JPEG compression in driver monitoring systems. IC Role / Device Role / Timing Role: Burst-mode SRAM providing 22 ns output enable delay to meet pixel-clock-aligned read timing for MIPI CSI-2 bridge ICs. Use Value: 25 mA max ICC at fmax avoids local thermal hotspots on dense ADAS PCBs; 85 °C rating ensures reliability under dashboard ambient conditions. |
| Medical Wearable ECG Memory | POS Terminal Transaction Log |
|
Use Scenario: Storing 30-second raw analog-to-digital samples from ultra-low-power ECG front-end ASICs during Bluetooth LE transmission gaps. IC Role / Device Role / Timing Role: Battery-critical MoBL SRAM delivering 2 µA standby current and 1.5 V data retention for safe brown-out recovery. Use Value: Automatic power-down on CE deassertion eliminates firmware sleep-state management overhead, reducing firmware complexity and BOM count. |
Use Scenario: Non-volatile transaction buffer in retail point-of-sale terminals that must retain last 100 receipts during AC power loss. IC Role / Device Role / Timing Role: Fast-access SRAM paired with supercapacitor backup circuitry to sustain VCC ≥1.5 V for >100 ms after main power failure. Use Value: 45 ns tRC ensures complete log entry write completion before power collapse; TSOP I package fits narrow payment terminal PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62157DV30LL-45ZSXI | Same 48-pin TSOP I footprint, identical pinout, but lacks Automotive-E temperature grade and has higher ISB2 (15 µA max) | Valid for industrial use only; not qualified for under-hood automotive environments | Select when cost sensitivity outweighs extended temp qualification and lower standby current is non-critical |
| IS61WV51216EDBLL-10TLI | 10 ns faster (35 ns tRC), but 12 µA ISB2 max and only 2.7–3.6 V supply range | Requires 3.3 V rail only; unsuitable for 2.5 V or battery-powered 2.2–3.6 V systems | Choose for maximum speed in fixed 3.3 V systems where power budget permits higher standby draw |
Compared with CY62157DV30LL-45ZSXI, this part adds Automotive-A qualification and cuts standby current by >50%; versus IS61WV51216EDBLL-10TLI, it trades 10 ns speed for wider voltage tolerance and superior low-power behavior in battery-backed applications.
Availability
CY62157EV30LL-45ZSXI is available at Aetrix Electronics and suitable for industrial automation, automotive infotainment, and portable medical devices requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY62157EV30LL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, emphasizing reliability, low-power innovation, and automotive-grade qualification.
This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for energy-constrained portable and embedded systems demanding nanosecond-level determinism without sacrificing standby efficiency.
FAQ
What is the minimum VCC required to retain data in CY62157EV30LL-45ZSXI?
Data retention is guaranteed down to 1.5 V, provided CE1 is HIGH, CE2 is LOW, and both BHE and BLE are HIGH to enter full standby. At this voltage, ICCDR remains ≤8 µA (Industrial grade), enabling safe hold during brown-out events without external backup capacitors exceeding 100 µF.
Can CY62157EV30LL-45ZSXI operate in 1M × 8 mode on a 48-pin TSOP I board?
Yes - tie the BYTE pin (Pin 45) LOW to configure as 1M × 8. In this mode, A19 appears on I/O15 pin, while BHE, BLE, and I/O8–I/O14 become unused. Address lines A0–A18 remain functional; no PCB redesign is needed beyond the BYTE pin connection.
How does the dual CE architecture improve system-level power management?
CE2 serves as a global standby enable: pulling CE2 LOW forces immediate power-down regardless of CE1 state, allowing hardware-based sleep control from PMICs or watchdog timers. CE1 then provides fine-grained per-device selection, enabling dynamic memory bank gating without firmware intervention.
Is the 45 ns access time valid across the full industrial temperature range?
Yes - the 45 ns tAA and tRC specifications are guaranteed over –40 °C to +85 °C at VCC = 2.2 V to 3.6 V. Electrical characteristics tables explicitly list "45 ns (Industrial/Automotive-A)" with min/max bounds validated across temperature and voltage corners per AEC-Q100 stress testing protocols.
CY62157EV30LL-45ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62157EV30LL-45ZSXI FAQ
1.How can I place an order for CY62157EV30LL-45ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157EV30LL-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157EV30LL-45ZSXI reliable?
The price and inventory of CY62157EV30LL-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157EV30LL-45ZSXI is usually 5 days.
3.What payment methods are accepted for CY62157EV30LL-45ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157EV30LL-45ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157EV30LL-45ZSXI?
CY62157EV30LL-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157EV30LL-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157EV30LL-45ZSXI?
For technical support, including CY62157EV30LL-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157EV30LL-45ZSXI requirements.
6.How does Aetrix verify that CY62157EV30LL-45ZSXI is sourced from the original manufacturer or authorized distributors?
All CY62157EV30LL-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157EV30LL-45ZSXI meets industry standards.
7.What is the process for return or replacement of CY62157EV30LL-45ZSXI?
All CY62157EV30LL-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62157EV30LL-45ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157EV30LL-45ZSXI part is unused and in its original packaging.
Return procedure for CY62157EV30LL-45ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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