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Infineon Technologies CY62157EV30LL-45ZSXIT
- Part No.:
- CY62157EV30LL-45ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62157EV30LL-45ZSXIT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,098
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Product details
Overview
CY62157EV30LL-45ZSXIT from Infineon Technologies (formerly Cypress) is a high-performance 8-Mbit CMOS static RAM organized as 512K × 16, operating at 45 ns access time with 2.2–3.6 V supply voltage and ultra-low standby current (2 µA typical). It supports industrial/automotive-A temperature range (–40 °C to +85 °C) and features automatic power-down on deselect, byte-level write control via BHE/ BLE, and pin compatibility with CY62157DV30. Used in portable embedded systems requiring battery-efficient memory buffering.
For engineers reviewing the CY62157EV30LL-45ZSXIT datasheet, CY62157EV30LL-45ZSXIT pinout, CY62157EV30LL-45ZSXIT application, or CY62157EV30LL-45ZSXIT equivalent, this page delivers verified package mapping (48-pin TSOP I), confirmed 16-bit data bus operation, validated low-power timing behavior, and real-world MoBL® design context for portable electronics.
Technical Context
The device implements a dual-chip-enable architecture (CE1/CE2) with independent byte enable (BHE/BLE) logic to support 16-bit word or split-byte access, enabling flexible memory expansion without external glue logic. Its CMOS design integrates automatic power-down circuitry triggered by CE1 HIGH, CE2 LOW, or simultaneous BHE/BLE HIGH - reducing ICC to ≤8 µA in standby.
It operates across a wide VCC range (2.2–3.6 V) while maintaining guaranteed 45 ns read cycle time (tRC) and 35 ns minimum write pulse width (tPWE) under industrial conditions. Data retention is supported down to 1.5 V with ICCDR ≤8 µA, and output drivers meet VOH ≥2.4 V (IOH = –1.0 mA) and VOL ≤0.4 V (IOL = 2.1 mA) at VCC > 2.7 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16 organization); enables single-chip replacement of two 4-Mbit × 8 SRAMs in 16-bit bus systems. |
| Access Time | 45 ns max (tAA, tACE); ensures compatibility with 22 MHz bus clocks in microcontroller interfaces. |
| Supply Voltage | 2.2 V to 3.6 V; supports direct interfacing with 2.5 V and 3.3 V logic families without level shifters. |
| Standby Current | 2 µA typical / 8 µA max (ISB2, Industrial); extends battery life in always-on portable subsystems. |
| Active Current | 6 mA typical at f = 1 MHz (ICC); enables low-power operation in intermittent-data-acquisition applications. |
| Data Retention Voltage | 1.5 V min (VDR); allows memory state hold during brown-out or controlled sleep modes. |
| Operating Temperature | –40 °C to +85 °C (Industrial/Automotive-A); qualified for under-hood and industrial control environments. |
Pinout & Package
Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, surface-mountable with 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; A19 unused in 512K×16 mode. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance when CE1 HIGH, CE2 LOW, OE HIGH, or during write cycles. |
| CE1, CE2 | Chip Enable Inputs | Dual-enable logic: device active only when CE1 = LOW AND CE2 = HIGH; enables hierarchical memory decoding. |
| OE | Output Enable | Controls read-data output drive; outputs enter high-Z when OE = HIGH, independent of CE state. |
| WE | Write Enable | Active-LOW signal initiating write cycles; combined with CE and BHE/BLE to define write boundaries. |
| BHE, BLE | Byte Enable Inputs | Select high-byte (I/O8–I/O15) or low-byte (I/O0–I/O7) for partial writes; critical for 8-bit peripheral coexistence. |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 2 µA typical standby current enables multi-year battery life in IoT edge nodes and wearables. |
| Configurable Memory Organization | Fixed 512K × 16 mode in TSOP I package; eliminates need for external address multiplexing logic. |
| Automatic Power-Down on Deselect | Hardware-triggered transition to ISB2 ≤8 µA when CE1 HIGH or CE2 LOW - no software intervention required. |
| CMOS-Compatible Input/Output Levels | VIH ≥2.2 V and VOL ≤0.4 V at 3.3 V allow direct connection to ARM Cortex-M, PIC, and FPGA I/O banks. |
| High-Speed 45 ns Timing | tRC = 45 ns guarantees reliable operation with 22 MHz synchronous buses in industrial HMIs and motor controllers. |
Applications
| Portable Medical Monitor | Automotive Instrument Cluster |
|---|---|
|
Use Scenario: Real-time waveform buffering in handheld ECG devices with intermittent wireless transmission. IC Role / Device Role / Timing Role: High-reliability, low-leakage SRAM storing 10-second raw analog samples prior to compression and BLE upload. Use Value: 2 µA standby current extends single-CR2032 battery life beyond 18 months in sleep-dominated duty cycles. |
Use Scenario: Graphics frame buffer for TFT display in digital dashboards with CAN FD communication. IC Role / Device Role / Timing Role: 16-bit parallel interface SRAM providing pixel data to display controller at 22 MHz pixel clock rate. Use Value: 45 ns tAA ensures zero wait-state rendering of speedometer and warning icons under all operating temperatures. |
| Industrial PLC I/O Module | Wireless Sensor Gateway |
|
Use Scenario: Local status register and configuration storage in DIN-rail-mounted remote I/O terminals. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding calibrated sensor offsets and fault logs during mains power loss. Use Value: 1.5 V data retention voltage allows seamless holdover using supercapacitor backup without external regulators. |
Use Scenario: Message queue buffer in LoRaWAN gateways aggregating data from 50+ end-node sensors. IC Role / Device Role / Timing Role: Low-power SRAM staging incoming packets before AES-128 encryption and uplink scheduling. Use Value: Dual CE/BHE/BLE control enables concurrent packet reception and processing without bus contention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-45NLI | Same density (512K × 16), 45 ns speed, but 2.7–3.6 V only; no 2.2 V support. | Lacks extended low-voltage operation needed for battery-powered brown-out resilience. | Choose if system uses fixed 3.3 V rail and requires second-source qualification. |
| ON Semiconductor NVSRAM NB16L0816F-45Z | Non-volatile variant with integrated EEPROM backup; higher standby current (15 µA typical). | Provides automatic data retention on power loss, but trades off MoBL® power efficiency. | Choose only when persistent storage without external backup capacitor is mandatory. |
Compared with IS62WV51216BLL-45NLI, CY62157EV30LL-45ZSXIT offers wider voltage range and lower standby current; versus NB16L0816F-45Z, it delivers superior power efficiency and deterministic timing, making it optimal for battery-constrained, volatile-buffering roles.
Availability
CY62157EV30LL-45ZSXIT is available at Aetrix Electronics and suitable for portable medical monitors, automotive instrument clusters, industrial PLC I/O modules, and wireless sensor gateways requiring stable component supply across long product lifecycles.
Supply support for CY62157EV30LL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and automotive qualifications.
This part belongs to the MoBL® (More Battery Life™) SRAM product line, designed specifically for ultra-low-power, high-reliability memory buffering in portable and energy-sensitive embedded systems.
FAQ
What is the correct power-up sequence for CY62157EV30LL-45ZSXIT?
Apply VCC first, allowing ≥100 µs ramp time to VCC(min), then stabilize for ≥200 µs before asserting any control signals. CE1, CE2, BHE, and BLE must be driven to valid CMOS levels (≥VCC–0.2 V or ≤0.2 V) before enabling active operations to meet ISB2 and ICCDR specifications. Floating inputs may cause excessive leakage or undefined states.
Can CY62157EV30LL-45ZSXIT operate in 1M × 8 mode?
No - the -45ZSXIT suffix denotes the 48-pin TSOP I package configured exclusively for 512K × 16 operation. The BYTE pin is internally tied for this mode; A19 is not accessible, and BHE/BLE remain functional for byte writes. Only the 48-pin TSOP I version with BYTE pin externally controllable supports 1M × 8 reconfiguration, which is not applicable to this specific ordering code.
How does automatic power-down behave during partial address changes?
Power-down activates only when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH - not on address stability alone. If CE remains active and only address lines toggle, the device stays in active mode with ICC ≈6 mA at 1 MHz. True power-down requires explicit chip deselect or byte-enable disable, independent of address activity.
Is CY62157EV30LL-45ZSXIT pin-compatible with CY62157DV30 in all packages?
Yes - Infineon confirms pin-for-pin compatibility with CY62157DV30 in identical 48-pin TSOP I packages, including identical pin functions, timing parameters, and DC characteristics. No PCB redesign is needed for drop-in replacement, though users should verify VCC tolerance (DV30 supports 2.7–3.6 V only) and thermal resistance differences in layout validation.
CY62157EV30LL-45ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62157EV30LL-45ZSXIT FAQ
1.How can I place an order for CY62157EV30LL-45ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157EV30LL-45ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157EV30LL-45ZSXIT reliable?
The price and inventory of CY62157EV30LL-45ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157EV30LL-45ZSXIT is usually 5 days.
3.What payment methods are accepted for CY62157EV30LL-45ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157EV30LL-45ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157EV30LL-45ZSXIT?
CY62157EV30LL-45ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157EV30LL-45ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157EV30LL-45ZSXIT?
For technical support, including CY62157EV30LL-45ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157EV30LL-45ZSXIT requirements.
6.How does Aetrix verify that CY62157EV30LL-45ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY62157EV30LL-45ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157EV30LL-45ZSXIT meets industry standards.
7.What is the process for return or replacement of CY62157EV30LL-45ZSXIT?
All CY62157EV30LL-45ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157EV30LL-45ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157EV30LL-45ZSXIT part is unused and in its original packaging.
Return procedure for CY62157EV30LL-45ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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