Infineon Technologies CY62157EV30LL-45ZXI

Overview

CY62157EV30LL-45ZXI from Infineon Technologies (formerly Cypress) is a 8-Mbit CMOS static RAM organized as 512K × 16, operating at 45 ns access time across –40 °C to +85 °C industrial temperature range with supply voltage 2.2 V–3.6 V. It delivers ultra-low standby current (2 µA typical), supports byte-wide and word-wide configurations via BHE/ BLE controls, and is used in portable embedded systems requiring battery longevity and deterministic timing.

For engineers reviewing the CY62157EV30LL-45ZXI datasheet, CY62157EV30LL-45ZXI pinout, CY62157EV30LL-45ZXI application, or CY62157EV30LL-45ZXI equivalent, this page provides verified package mapping (48-pin TSOP I), functional pin roles, real-world power behavior (ISB2 = 8 µA max), configuration flexibility (512K×16 / 1M×8), and validated alternatives for memory subsystem design.

Technical Context

The device implements dual chip enable (CE1/CE2) and independent byte enables (BHE/BLE) to support selective 8-bit or 16-bit data access without external logic. Its automatic power-down circuit activates when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH, reducing ICCDR to ≤8 µA at 1.5 V retention voltage.

It features CMOS-compatible input thresholds (VIH = 2.2 V min at VCC ≥ 2.7 V), guaranteed tri-state timing (tHZOE ≤ 20 ns), and full AC operation after 100 µs VCC ramp. The 48-pin TSOP I package includes NC pins (A19 not used in 512K×16 mode) and requires BYTE tied HIGH for standard operation.

Key Specifications

Pinout & Package

48-pin Thin Small Outline Package (TSOP I), 12.0 mm × 20.0 mm body, 0.5 mm pitch, JEDEC MO-141AC compliant. Pin 1 index marked by beveled corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-density low-power SRAM applications.

Compared with IS62WV51216BLL-45NLI and NCS25157E-45Z, CY62157EV30LL-45ZXI uniquely combines hardware-triggered sub-µA retention, dual CE expandability, and true 2.2 V operation-making it optimal for battery-constrained, multi-bank embedded systems where deterministic low-power behavior is non-negotiable.

Availability

CY62157EV30LL-45ZXI is available at Aetrix Electronics and suitable for industrial PLC I/O modules, automotive ADAS camera buffers, medical portable ultrasound displays, and smart energy meter data loggers requiring stable component supply across extended product lifecycles.

Supply support for CY62157EV30LL-45ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and memory solutions for industrial, automotive, and IoT markets.

This part belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable and battery-operated embedded systems where runtime, thermal footprint, and voltage scalability are critical design constraints.

FAQ

What is the minimum VCC required to retain data in CY62157EV30LL-45ZXI?

Data retention is guaranteed down to VCC = 1.5 V, with ICCDR ≤ 8 µA at that voltage under industrial temperature conditions. This allows safe operation during brown-out events or capacitor-backed power-loss scenarios lasting up to 10 seconds, provided CE1, CE2, BHE, and BLE are held at valid CMOS levels per datasheet Section 6.

Can CY62157EV30LL-45ZXI operate in 1M × 8 mode on a 48-pin TSOP I package?

Yes-tie the BYTE pin LOW to configure as 1M × 8. In this mode, pin 45 becomes A19, while BHE, BLE, and I/O8–I/O14 are unused. Address lines A0–A18 remain active, and I/O0–I/O7 serve as the sole data bus. The device maintains 45 ns access time and same power specifications in either configuration.

Does CY62157EV30LL-45ZXI require external pull-up or pull-down resistors on control pins?

No external biasing is required: CE1, CE2, BHE, BLE, OE, and WE have CMOS-compatible input thresholds and internal clamping diodes. However, floating inputs are not recommended-tie unused control signals (e.g., BYTE in 512K×16 mode) to VCC or GND per datasheet Figure 3 and Table 1 to ensure predictable ISB2 and avoid leakage-induced wake-up.

How does the dual CE architecture improve memory expansion in multi-SRAM systems?

CE1 and CE2 act as complementary enables: CE1 LOW + CE2 HIGH enables the device, while CE1 HIGH or CE2 LOW forces standby. This allows hierarchical decoding-e.g., using upper address bits to drive CE2 across multiple SRAMs while sharing CE1 globally-reducing gate count versus discrete decoder ICs and eliminating address aliasing in 16-bit bus systems.