Infineon Technologies CY62157EV30LL-55ZSXE

Overview

CY62157EV30LL-55ZSXE from Infineon Technologies (formerly Cypress) is a high-performance 8-Mbit CMOS static RAM organized as 512K × 16, operating at 2.2–3.6 V with 55 ns access time for Automotive-E grade (–40 °C to +125 °C). It delivers ultra-low standby current (2 µA typical, 30 µA max), supports byte-wide and word-wide configurations via BHE/ BLE controls, and features automatic power-down on chip deselect-enabling extended battery life in automotive infotainment head units.

For engineers reviewing the CY62157EV30LL-55ZSXE datasheet, CY62157EV30LL-55ZSXE pinout, CY62157EV30LL-55ZSXE application, or CY62157EV30LL-55ZSXE equivalent, key selection criteria include its 48-pin TSOP I package compatibility, dual CE/byte-enable architecture for memory expansion, industrial- and automotive-grade thermal performance, and MoBL®-optimized active power (1.8 mA typical at 1 MHz).

Technical Context

The device implements a dual-chip-enable (CE1/CE2) and dual-byte-enable (BHE/ BLE) interface to support flexible memory mapping and seamless expansion across multiple SRAM banks. Its CMOS design enables simultaneous low-voltage operation (2.2 V min) and fast switching (55 ns tRC), with internal power-down logic triggered by any of CE1 HIGH, CE2 LOW, or both BHE and BLE HIGH.

It supports two data-width configurations: native 512K × 16 mode (BYTE pin tied HIGH in TSOP I), and 1M × 8 mode (BYTE pin LOW, A19 enabled on pin 45). Data retention is guaranteed down to 1.5 V with ICCDR ≤ 30 µA in Automotive-E grade, meeting stringent automotive system-level power budget constraints.

Key Specifications

Pinout & Package

Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, surface-mountable with standard reflow profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability automotive SRAM applications.

Compared with IS61WV51216EDBLL-10MLI and AS6C1008-55TIN, CY62157EV30LL-55ZSXE uniquely combines Automotive-E temperature rating, dual-width configurability, and MoBL®-class standby power - making it the only choice for thermally demanding, multi-architecture automotive memory subsystems.

Availability

CY62157EV30LL-55ZSXE is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS camera buffers, telematics control units, and V2X message caches requiring stable component supply across extended product lifecycles.

Supply support for CY62157EV30LL-55ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with deep expertise in AEC-Q100-qualified components.

This part belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability memory in automotive and portable industrial systems where thermal resilience and energy efficiency are non-negotiable.

FAQ

What is the function of the BYTE pin on CY62157EV30LL-55ZSXE?

The BYTE pin configures memory organization: tied HIGH enables 512K × 16 mode (default), while tied LOW switches to 1M × 8 mode and repurposes pin 45 as A19. This single-pin strapping eliminates need for external mode-select logic and supports hardware-compatible migration between 8-bit and 16-bit host interfaces without PCB redesign.

Does CY62157EV30LL-55ZSXE require external pull-up or pull-down resistors on CE1/CE2?

No external biasing is required: CE1 and CE2 have internal weak pull-downs (typical 100 kΩ) that ensure defined LOW state when unconnected. However, for deterministic power-down behavior in noisy automotive environments, Infineon recommends tying unused CE inputs to GND or VCC via ≤10 kΩ resistors per AEC-Q100 EMC guidelines.

Can CY62157EV30LL-55ZSXE operate reliably at 2.2 V across the full –40 °C to +125 °C range?

Yes - all AC and DC specifications including 55 ns access time, 30 µA max ISB2, and 1.5 V data retention are guaranteed over the full Automotive-E temperature range at VCC = 2.2 V. The device meets Infineon's extended voltage qualification test plan, which includes 1000-hour HTOL stress at 2.2 V and +125 °C.

How does the automatic power-down feature interact with OE and WE signals?

Power-down is triggered solely by CE1/CE2/BHE/ BLE states - OE and WE have no effect on standby current. When CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH, the core array powers down regardless of OE/WE state. Outputs enter high-Z only when OE is HIGH or CE is inactive, but internal leakage remains at ISB2 level even during active OE/WE toggling in deselected state.