Infineon Technologies CY62157EV30LL-55ZSXET

Overview

CY62157EV30LL-55ZSXET from Infineon Technologies (formerly Cypress) is a 8-Mbit MoBL® CMOS static RAM organized as 512K × 16, operating at 2.2–3.6 V with 55 ns access time for Automotive-E grade (–40 °C to +125 °C). It delivers ultra-low standby current (2 µA typical, 30 µA max), active current of 1.8 mA at 1 MHz, and supports byte-wide or word-wide access via BHE/ BLE controls. Used in automotive infotainment head units requiring non-volatile data buffering during power transitions.

For engineers reviewing the CY62157EV30LL-55ZSXET datasheet, CY62157EV30LL-55ZSXET pinout, CY62157EV30LL-55ZSXET application, or CY62157EV30LL-55ZSXET equivalent, key selection criteria include its dual-configurable memory organization (512K × 16 / 1M × 8), automatic power-down on chip deselect, TSOP I package compatibility, and guaranteed operation up to +125 °C ambient.

Technical Context

This SRAM implements a fully static CMOS architecture with independent byte enable (BHE/ BLE) control, enabling selective 8-bit writes without disturbing adjacent bytes. Its power-down circuitry activates when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - reducing ICCDR to ≤30 µA at 1.5 V retention voltage.

The device supports two physical configurations: as a 512K × 16 SRAM (BYTE pin tied HIGH in 48-pin TSOP I) or as a 1M × 8 SRAM (BYTE pin LOW, repurposing A19 on pin 45). Addressing uses 19 address lines (A0–A18), with no internal refresh required and full compatibility with standard asynchronous SRAM controllers.

Key Specifications

Pinout & Package

Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, lead-free, surface-mountable with 0.5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.

Compared with IS61WV51216EDBLL-55TLI and AS6C4008-55ZIN, CY62157EV30LL-55ZSXET uniquely combines +125 °C operation, hardware-configurable organization, and true dual-byte enable - making it the only option qualified for under-hood ADAS and battery management subsystems requiring deterministic low-power behavior.

Availability

CY62157EV30LL-55ZSXET is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS sensor fusion units, and telematics control units requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for CY62157EV30LL-55ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive microcontrollers, and memory solutions acquired from Cypress Semiconductor.

CY62157EV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability applications in automotive and industrial edge devices where data integrity and thermal resilience are critical.

FAQ

What is the maximum junction temperature for CY62157EV30LL-55ZSXET?

The device is rated for operation up to +125 °C ambient temperature (Automotive-E grade), with thermal resistance θJA = 60.07 °C/W in 48-pin TSOP I. Maximum junction temperature is calculated as TJ = TA + (θJA × PD); at 30 µA standby current and 3.6 V, power dissipation remains below 0.11 mW, keeping TJ well within safe limits even at full ambient rating.

Can CY62157EV30LL-55ZSXET be used in 1M × 8 mode on a board designed for 512K × 16?

Yes - the 48-pin TSOP I package supports hardware reconfiguration: tie the BYTE pin LOW to enable 1M × 8 mode, which repurposes pin 45 as A19 and disables BHE, BLE, and I/O8–I/O14. No PCB redesign is needed beyond the BYTE pin connection; all other signals retain identical mapping and timing.

Does CY62157EV30LL-55ZSXET require an external clock or refresh signal?

No - it is a fully static CMOS SRAM with no clock input or refresh requirement. Data retention is maintained as long as VCC remains ≥1.5 V and chip enable conditions meet ISB2 specifications. All timing is asynchronous and controlled solely by CE, OE, WE, and BHE/ BLE edges.

How does the automatic power-down feature activate without firmware intervention?

Power-down triggers automatically when any of these conditions occur: CE1 HIGH, CE2 LOW, or both BHE and BLE HIGH. The internal circuit monitors these inputs continuously - no register writes, timers, or CPU involvement are required. Exit occurs within 0 ns tPU (power-up time) when valid CE/WE/OE conditions resume.