Infineon Technologies CY62157EV30LL-55ZXE
- Part No.:
- CY62157EV30LL-55ZXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62157EV30LL-55ZXE.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY62157EV30LL-55ZXE from Infineon Technologies (formerly Cypress) is a high-performance 8-Mbit CMOS static RAM organized as 512K × 16, operating at 2.2–3.6 V with 55 ns access time for Automotive-E grade (–40 °C to +125 °C). It features ultra-low standby current (2 µA typical), automatic power-down on deselect, and dual chip enable (CE1/CE2) with byte-level control (BHE/BLE) for flexible memory expansion in battery-constrained embedded systems.
For engineers reviewing the CY62157EV30LL-55ZXE datasheet, CY62157EV30LL-55ZXE pinout, CY62157EV30LL-55ZXE application, or CY62157EV30LL-55ZXE equivalent, key selection criteria include automotive-grade temperature support, TSOP I / VFBGA package compatibility, 512K×16 vs. 1M×8 configurability, low-voltage operation down to 2.2 V, and verified ISB2 ≤ 30 µA at +125 °C.
Technical Context
The device implements a fully static CMOS architecture with independent byte enables (BHE/BLE) enabling simultaneous or selective access to high- and low-byte data paths. Its automatic power-down logic triggers when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - placing I/Os in high-impedance state without external control.
It supports two memory configurations: standard 512K × 16 mode (default), and 1M × 8 mode via BYTE pin control in 48-pin TSOP I packages. The 48-ball VFBGA and 44-pin TSOP II variants omit the BYTE pin and operate exclusively in 512K × 16 mode. All versions maintain pin-compatible footprint with CY62157DV30.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 16 (standard); configurable to 1M × 8 in 48-pin TSOP I via BYTE pin |
| Access Time | 55 ns max at –40 °C to +125 °C (Automotive-E grade) |
| Supply Voltage Range | 2.20 V to 3.60 V - enables direct interface with 2.5 V and 3.3 V logic domains |
| Standby Current (ISB2) | ≤ 30 µA at VCC = 3.6 V, TA = +125 °C - ensures multi-year battery life in always-on modules |
| Active Current (ICC) | ≤ 35 mA at f = fmax, VCC = 3.6 V - supports burst reads/writes without thermal throttling |
| Data Retention Voltage | VDR = 1.5 V minimum - allows safe low-power suspend with partial rail collapse |
| Operating Temperature | –40 °C to +125 °C (Automotive-E) - qualified per AEC-Q100 Grade 0 requirements |
Pinout & Package
Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, lead-free finish. Pin pitch: 0.5 mm. Body size: 12.0 mm × 20.0 mm × 1.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting 512K-word addressing; A19 available only in 1M×8 mode (TSOP I, BYTE = LOW) |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled when BLE = LOW; high-impedance when deselected or during write |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled when BHE = LOW; isolated from low byte for true 16-bit parallel access |
| CE1 / CE2 | Chip Enable Inputs | Two independent enables: CE1 active LOW, CE2 active LOW; device selected only when CE1 = LOW AND CE2 = HIGH |
| OE | Output Enable | Controls output drivers only; does not affect internal power state - read access requires OE = LOW + valid CE |
| WE | Write Enable | Active LOW write strobe; initiates write when CE1 = LOW, CE2 = HIGH, and WE = LOW |
| BHE / BLE | Byte High/Low Enable | Independent gating of high/low data bytes; enables partial writes without disturbing adjacent byte |
| VCC / VSS | Power / Ground | Dual VCC pins (pins 24 & 48) and dual VSS pins (pins 23 & 47) reduce IR drop and improve noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-Low Standby Power | 2 µA typical ISB2 at +125 °C - extends battery life in telematics and ADAS modules during sleep cycles |
| Configurable Memory Width | Single package supports both 512K×16 and 1M×8 modes - reduces BOM count across product variants |
| Automatic Power-Down Logic | Hardware-triggered transition to standby on CE/BHE/BLE deassertion - eliminates need for external power management IC |
| Automotive-Qualified Operation | Rated for –40 °C to +125 °C with full AC/DC specs guaranteed - suitable for engine control and infotainment ECUs |
| CMOS-Compatible Interface | VIH/VIL thresholds scale with VCC (e.g., VIH ≥ 2.2 V at VCC ≥ 2.7 V) - ensures robust signal integrity across voltage corners |
Applications
| Automotive Telematics Module | Industrial PLC Data Buffer |
|---|---|
Use Scenario: Real-time GPS position logging and cellular transmission buffering in vehicle tracking units with intermittent power. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and packet assembly; operates in 512K×16 mode with CE1/CE2 sequenced by MCU GPIO. Use Value: 55 ns access time enables sub-millisecond response to CAN bus interrupts; 30 µA ISB2 permits >5-year battery backup in GPS cold-start scenarios. |
Use Scenario: Temporary storage of sensor readings and control outputs in modular programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Dual-port accessible SRAM interfaced to ARM Cortex-M7 core via 16-bit parallel bus; BHE/BLE used for atomic register updates. Use Value: Independent byte enables allow concurrent update of analog output registers and digital I/O status without bus contention or software locking. |
| Medical Portable Monitor | Avionics Display Cache |
Use Scenario: ECG waveform capture and real-time FFT processing in handheld patient monitors powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-voltage SRAM (2.2 V min) serving as frame buffer and algorithm scratchpad; automatic power-down engaged between measurement bursts. Use Value: 2.2 V operation enables direct connection to buck-boost regulator output; 2 µA standby current extends single-charge runtime to >72 hours. |
Use Scenario: Graphics cache for HUD (Head-Up Display) systems requiring deterministic latency and radiation-tolerant data retention. IC Role / Device Role / Timing Role: Non-volatile-coupled SRAM holding rendered glyphs and overlay metadata; accessed synchronously with display controller pixel clock. Use Value: Guaranteed 55 ns timing at +125 °C ensures consistent refresh rate under cockpit thermal stress; VDR = 1.5 V supports graceful degradation during brownout events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV51216EDBLL-55TLI | 55 ns access, 512K×16, 2.5 V only (2.375–2.625 V), no BYTE pin, no 1M×8 mode | Lacks automotive temperature range (–40 °C to +85 °C only); no VCC scaling below 2.375 V | Select if system uses fixed 2.5 V supply and requires JEDEC-standard TSOP II footprint without configurability needs. |
| AS6C8016-55ZIN | 55 ns access, 512K×16, 3.3 V only (3.0–3.6 V), no CE2, no BHE/BLE, no auto power-down | No byte enable or dual CE; standby current 20 µA typical (not specified at +125 °C) | Select for cost-sensitive industrial controls where full 16-bit writes dominate and thermal margin exceeds +85 °C. |
Compared with IS61WV51216EDBLL-55TLI and AS6C8016-55ZIN, CY62157EV30LL-55ZXE uniquely delivers wide-voltage operation (2.2–3.6 V), automotive-grade temperature support, hardware-configurable memory width, and guaranteed sub-30 µA standby at +125 °C - making it the only option qualified for safety-critical automotive ECU data buffers.
Availability
CY62157EV30LL-55ZXE is available at Aetrix Electronics and suitable for automotive telematics, industrial PLC data buffering, and portable medical monitoring requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY62157EV30LL-55ZXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and memory solutions with strong focus on reliability and functional safety.
This device belongs to the MoBL® (More Battery Life™) SRAM product line, designed specifically for ultra-low-power embedded applications where extended battery life, wide supply voltage tolerance, and automotive qualification are mandatory.
FAQ
What is the maximum junction temperature for continuous operation?
The CY62157EV30LL-55ZXE is rated for ambient operation up to +125 °C (Automotive-E grade) with θJA = 60.07 °C/W in 48-pin TSOP I. Using the datasheet's thermal resistance and maximum power dissipation (35 mA × 3.6 V ≈ 126 mW), junction temperature remains within safe limits (<150 °C) under still-air conditions on a four-layer PCB.
Can this SRAM be used in 1M×8 mode with the 48-ball VFBGA package?
No. The 48-ball VFBGA package does not include the BYTE pin required to configure 1M×8 mode. Only the 48-pin TSOP I variant supports 1M×8 operation, and only when BYTE is externally tied LOW. All other packages (VFBGA, TSOP II) operate exclusively in 512K×16 mode.
How does the automatic power-down feature interact with CE1 and CE2 timing?
Power-down activates when CE1 is HIGH OR CE2 is LOW OR both BHE and BLE are HIGH. The device enters standby immediately upon meeting any condition - no additional delay or clock cycle required. Outputs go high-impedance within tHZCE (≤20 ns), and ISB2 current applies after tPD (≤55 ns).
Is there a recommended decoupling strategy for the dual VCC pins?
Each VCC pin (pins 24 and 48) must be independently decoupled with a 100 nF X7R ceramic capacitor placed within 3 mm of the pin and connected to the nearest VSS pin (23 or 47). A bulk 4.7 µF tantalum capacitor should be shared across both VCC nets near the package center to suppress low-frequency ripple.
CY62157EV30LL-55ZXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62157EV30LL-55ZXE FAQ
1.How can I place an order for CY62157EV30LL-55ZXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157EV30LL-55ZXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157EV30LL-55ZXE reliable?
The price and inventory of CY62157EV30LL-55ZXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157EV30LL-55ZXE is usually 5 days.
3.What payment methods are accepted for CY62157EV30LL-55ZXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157EV30LL-55ZXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157EV30LL-55ZXE?
CY62157EV30LL-55ZXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157EV30LL-55ZXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157EV30LL-55ZXE?
For technical support, including CY62157EV30LL-55ZXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157EV30LL-55ZXE requirements.
6.How does Aetrix verify that CY62157EV30LL-55ZXE is sourced from the original manufacturer or authorized distributors?
All CY62157EV30LL-55ZXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157EV30LL-55ZXE meets industry standards.
7.What is the process for return or replacement of CY62157EV30LL-55ZXE?
All CY62157EV30LL-55ZXE units undergo pre-shipment inspection (PSI). If there is an issue with CY62157EV30LL-55ZXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157EV30LL-55ZXE part is unused and in its original packaging.
Return procedure for CY62157EV30LL-55ZXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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