Infineon Technologies CY62157G18-55BVXA

Overview

CY62157G18-55BVXA from Infineon Technologies (formerly Cypress) is an automotive-grade 8-Mbit (512K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), dual chip-enable architecture, and ultra-low standby current (5 µA typical). It operates across 1.65 V–2.2 V supply, delivers 55 ns access time, and supports byte-level writes via BHE/ BLE control - deployed in ADAS domain controllers requiring deterministic memory integrity.

For engineers reviewing the CY62157G18-55BVXA datasheet, CY62157G18-55BVXA pinout, CY62157G18-55BVXA application, or CY62157G18-55BVXA equivalent, key selection criteria include AEC-Q100 qualification, ECC implementation without automatic write-back, dual CE timing behavior, and VFBGA-48 package compatibility with automotive PCB layout constraints.

Technical Context

The CY62157G18-55BVXA implements a dedicated ECC encoder/decoder block integrated into the SRAM core, correcting single-bit errors on read but not triggering automatic write-back upon detection. Its dual chip-enable logic requires CE1 = LOW and CE2 = HIGH for device selection, decoupling address decoding from chip enable assertion.

It features Byte Power Down: when both BHE and BLE are deasserted, the device enters standby mode regardless of CE state - enabling dynamic power gating per memory access granularity. The 16-bit bidirectional I/O bus (I/O0–I/O15) supports independent upper/lower byte writes and reads under TTL-compatible voltage thresholds.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), JEDEC MO-270AC compliant, 6 mm × 8 mm body, 0.8 mm ball pitch, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Compared with IS61WV51216EDBLL-10MLI and AS6C8016-55TIN, the CY62157G18-55BVXA uniquely combines AEC-Q100 qualification, on-die ECC, and sub-10 µA standby - making it the only option for ISO 26262 ASIL-B memory subsystems requiring hardware-level error containment.

Availability

CY62157G18-55BVXA is available at Aetrix Electronics and suitable for ADAS sensor fusion hubs, automotive gateway ECUs, and body control modules requiring stable component supply, long-term automotive qualification, and ECC-enabled memory integrity.

Supply support for CY62157G18-55BVXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and security solutions - with annual revenue exceeding €14 billion and manufacturing sites across Europe, Asia, and the US.

The CY62157G series belongs to Infineon's automotive SRAM portfolio, designed specifically for functional safety-critical memory applications in ADAS, powertrain, and chassis systems where data integrity, low power, and AEC-Q100 compliance are mandatory.

FAQ

Does CY62157G18-55BVXA support automatic error correction write-back?

No. The device detects and corrects single-bit errors during read operations using embedded ECC, but does not perform automatic write-back to the memory array upon correction. Corrected data is presented to the controller, and any persistent correction must be handled at the system level. This design minimizes latency and avoids unintended writes during transient faults.

What is the function of the BYTE pin in CY62157G18-55BVXA?

The CY62157G18-55BVXA does not have a BYTE pin - that signal exists only in the 48-pin TSOP I variant (e.g., CY62157G18-55ZSXI). The VFBGA-48 package (BVXA suffix) uses fixed 512K × 16-bit organization with no BYTE pin. Pin 45 in TSOP I serves as A19 in 1M × 8 mode, but this configuration is unavailable in the BVXA package.

Can CY62157G18-55BVXA operate at 1.5 V?

No. The absolute minimum operating VCC is 1.65 V per datasheet specifications. While data retention is guaranteed down to 1.5 V, active read/write operations require VCC ≥ 1.65 V. Operating below this threshold risks timing violations, increased bit error rate, and potential bus contention due to degraded noise margins on TTL-compatible I/Os.

How does Byte Power Down interact with chip enable signals?

Byte Power Down overrides chip enable states: when both BHE and BLE are deasserted, the device enters standby mode regardless of CE1/CE2 logic levels. This allows power gating at the byte-access layer - for example, disabling unused I/O lanes during partial writes - without requiring coordinated CE deassertion from the memory controller.