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Infineon Technologies CY62157G18-55BVXAT
- Part No.:
- CY62157G18-55BVXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157G18-55BVXAT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,649
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Product details
Overview
CY62157G18-55BVXAT from Infineon Technologies (formerly Cypress) is an automotive-grade 8-Mbit (512K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), dual chip-enable control, and Byte Power Down capability. It operates across 1.65–2.2 V or 2.2–3.6 V supply ranges, delivers 55 ns access time, and supports AEC-Q100 Grade A (–40 °C to +85 °C) for safety-critical memory applications in engine control units and ADAS domain controllers.
For engineers reviewing the CY62157G18-55BVXAT datasheet, CY62157G18-55BVXAT pinout, CY62157G18-55BVXAT application, or CY62157G18-55BVXAT equivalent, key selection criteria include ECC-enabled data integrity, ultra-low 5 µA typical standby current, dual CE architecture for hierarchical memory mapping, and Pb-free 48-ball VFBGA packaging compatible with high-density automotive PCB layouts.
Technical Context
The CY62157G18-55BVXAT implements a dedicated on-die ECC encoder/decoder pair that detects and corrects single-bit errors in real time without external logic or software intervention. Its dual chip-enable interface (CE1 active-low, CE2 active-high) enables precise bank selection in multi-SRAM systems, while the Byte High/Low Enable (BHE/ BLE) signals allow independent 8-bit writes to upper or lower byte lanes.
It features automatic power-down activation when both BHE and BLE are deasserted-regardless of CE state-enabling dynamic per-byte power gating. The device retains data at 1.5 V and maintains TTL-compatible I/O thresholds across its full voltage range, ensuring interoperability with legacy microcontrollers and ASICs in automotive infotainment and body control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K words × 16-bit); supports 16-bit parallel bus interface without external data multiplexing |
| Access Time | 55 ns max at 1.65–2.2 V; ensures deterministic timing for real-time ECUs with ≤18 MHz bus clocks |
| ECC Function | On-die single-bit error correction (SER FIT < 0.1 FIT/Mb); eliminates need for external ECC logic or firmware overhead |
| Standby Current | 5 µA typical / 35 µA max at 25 °C; enables >10-year battery-backed retention in always-on vehicle subsystems |
| Operating Voltage | 1.65–2.2 V or 2.2–3.6 V; accommodates both low-voltage MCU domains and legacy 3.3 V peripherals |
| Temperature Range | AEC-Q100 Automotive-A (–40 °C to +85 °C); qualified for under-hood and cabin-mounted control units |
| Data Retention | 1.5 V minimum; allows graceful degradation during brown-out events without data loss |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant and Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 512K-word addressing; A18 used for extended page mode in some configurations |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE for byte-selective access |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted for device selection; enables hierarchical memory decoding |
| WE | Write Enable | Active-Low signal controlling write cycles; latches address and data on falling edge |
| OE | Output Enable | Active-Low signal enabling read data output; places I/Os in HI-Z when deasserted |
| BHE, BLE | Byte Enable Controls | Independent gating of upper/lower byte lanes; simultaneous deassertion triggers automatic standby mode |
| VCC, VSS | Power Supply | Dual VCC pins (balls A16, C1) and multiple VSS balls (A1, B1, D1, E1, F1, G1, H1) ensure low-impedance power delivery and noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Engine | Hardware-accelerated single-bit error detection and correction with no CPU intervention or latency penalty |
| Byte Power Down | Automatic transition to ultra-low-power standby when both BHE and BLE are inactive-bypassing CE dependency |
| Dual Chip-Enable Interface | Enables seamless integration into multi-bank memory architectures with independent enable control per SRAM segment |
| TTL-Compatible I/O | Guaranteed VIH/VIL thresholds across full VCC range eliminate level-shifter requirements in mixed-voltage systems |
| 1.5-V Data Retention | Maintains stored contents during deep sleep or battery backup modes without refresh or auxiliary power |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
Use Scenario: Real-time storage of sensor fusion buffers and actuator command histories in diesel/gasoline engine management systems. IC Role / Device Role / Timing Role: Primary working memory for 32-bit RISC-based ECU microcontrollers executing closed-loop combustion control at 10 kHz update rates. Use Value: ECC protection prevents silent data corruption in critical fuel injection timing tables, avoiding misfire or emissions noncompliance. | Use Scenario: Buffering radar point-cloud data streams from 77 GHz front-facing sensors before preprocessing in SoC vision pipelines. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for pre-fusion temporal alignment and outlier filtering prior to GPU acceleration. Use Value: 55 ns access time meets sub-100 µs latency budget for real-time object tracking; 5 µA standby extends system wake-on-radar duty cycle. |
| Automotive Instrument Cluster | Body Control Module (BCM) |
Use Scenario: Storing animated gauge rendering frames and driver preference profiles in digital dashboards with OLED displays. IC Role / Device Role / Timing Role: Frame buffer memory interfaced directly to display controller via 16-bit parallel bus with burst read capability. Use Value: Dual CE architecture isolates display memory from CAN communication buffers, preventing cross-domain interference during firmware updates. | Use Scenario: Logging door lock actuation sequences, window position history, and lighting event timestamps for diagnostics and theft deterrence. IC Role / Device Role / Timing Role: Nonvolatile shadow memory backed by supercapacitor; retains logs during ignition-off periods. Use Value: 1.5 V data retention allows operation down to supercap voltage sag levels (~1.6 V), ensuring log integrity across 30-day parking intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM with ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV51216BLL-10MLI | No embedded ECC; requires external error-handling logic or software mitigation | Suitable for non-safety-critical consumer electronics where FIT rate is not regulated | Select only if ECC is implemented externally and AEC-Q100 qualification is not required |
| AS6C8016-55ZIN | 55 ns access but no ECC; higher 12 µA typical ISB; rated only to industrial –40 °C to +85 °C (non-AEC-Q100) | Limited to non-automotive industrial control where functional safety certification is waived | Choose only when cost sensitivity outweighs ECC requirement and automotive qualification is unnecessary |
Compared with IS61WV51216BLL-10MLI and AS6C8016-55ZIN, CY62157G18-55BVXAT uniquely delivers integrated ECC, AEC-Q100 compliance, and sub-10 µA standby-making it the sole option for ISO 26262 ASIL-B memory subsystems requiring hardware-level fault containment.
Availability
CY62157G18-55BVXAT is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and automotive instrument clusters requiring stable component supply, long-term lifecycle support, and guaranteed AEC-Q100 conformance.
Supply support for CY62157G18-55BVXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and security solutions with over 40 years of automotive qualification expertise.
CY62157G belongs to Infineon's MoBL® (Memory on Board Low-power) SRAM product line, engineered specifically for automotive and industrial applications demanding ultra-low power consumption, embedded reliability features, and robust operation across extended temperature ranges.
FAQ
Does CY62157G18-55BVXAT support automatic error correction without host processor involvement?
Yes. The device integrates a dedicated on-die ECC encoder/decoder that performs single-bit error detection and correction transparently during every read operation. No firmware, external logic, or CPU cycles are required-the corrected data appears directly on the I/O bus with no timing penalty or interrupt generation.
What is the function of the dual chip-enable (CE1 and CE2) interface?
CE1 (active-low) and CE2 (active-high) must both be asserted simultaneously to select the device. This dual-signal architecture prevents spurious activation during power-up/down transients and enables hierarchical memory decoding in multi-SRAM systems-such as partitioning boot code, runtime variables, and diagnostic logs across separate physical banks.
Can CY62157G18-55BVXAT operate reliably at 1.65 V supply voltage?
Yes. The device is fully specified for 1.65–2.2 V operation, including 55 ns access time, 5 µA typical standby current, and ECC functionality. All DC and AC parameters-including VIH/VIL thresholds and output drive strength-are guaranteed across this range per AEC-Q100 test conditions at –40 °C to +85 °C.
Is the 48-ball VFBGA package of CY62157G18-55BVXAT compatible with standard automotive PCB assembly processes?
Yes. The 48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch) uses standard solder paste stencil design rules and reflow profiles defined in IPC-J-STD-020. Its Pb-free, RoHS-compliant construction and thermal resistance (θJA ≈ 52 °C/W) meet automotive manufacturing requirements for under-hood and cabin-mounted modules.
CY62157G18-55BVXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157G18-55BVXAT FAQ
1.How can I place an order for CY62157G18-55BVXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157G18-55BVXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157G18-55BVXAT reliable?
The price and inventory of CY62157G18-55BVXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G18-55BVXAT is usually 5 days.
3.What payment methods are accepted for CY62157G18-55BVXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G18-55BVXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157G18-55BVXAT?
CY62157G18-55BVXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157G18-55BVXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157G18-55BVXAT?
For technical support, including CY62157G18-55BVXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G18-55BVXAT requirements.
6.How does Aetrix verify that CY62157G18-55BVXAT is sourced from the original manufacturer or authorized distributors?
All CY62157G18-55BVXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G18-55BVXAT meets industry standards.
7.What is the process for return or replacement of CY62157G18-55BVXAT?
All CY62157G18-55BVXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G18-55BVXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157G18-55BVXAT part is unused and in its original packaging.
Return procedure for CY62157G18-55BVXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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