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Infineon Technologies CY62157G18-55BVXI
- Part No.:
- CY62157G18-55BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157G18-55BVXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,344
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Product details
Overview
CY62157G18-55BVXI from Infineon Technologies (formerly Cypress) is an industrial-grade 8-Mbit MoBL® SRAM with embedded Error-Correcting Code (ECC), configured as 512K × 16-bit, operating at 1.65–2.2 V, with 55 ns access time and ultra-low 2.0 µA typical standby current. It delivers single-bit error correction in memory arrays for mission-critical data integrity in avionics control modules.
For engineers reviewing the CY62157G18-55BVXI datasheet, CY62157G18-55BVXI pinout, CY62157G18-55BVXI application, or CY62157G18-55BVXI equivalent, key selection criteria include ECC-enabled reliability, dual CE architecture, byte power-down capability, VFBGA48 package compatibility, and industrial temperature support (–40 °C to +85 °C).
Technical Context
This SRAM implements a dual-chip-enable interface (CE1 LOW / CE2 HIGH) and supports byte-level writes via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls. Its ECC encoder/decoder logic operates transparently during read/write cycles without software overhead.
The device features automatic "Byte Power Down": when both BHE and BLE are deasserted, it enters standby mode regardless of CE state-enabling dynamic power gating in partial-access memory subsystems. Data retention remains valid down to 1.0 V, supporting brown-out recovery in safety-critical systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 16-bit (8 Mbit); fixed configuration in VFBGA48 package, no 1M×8 reconfiguration. |
| Access Time | 55 ns max at 1.65–2.2 V; enables timing closure in 18 MHz bus interfaces (e.g., legacy microcontroller local buses). |
| Supply Voltage | 1.65 V to 2.2 V only; optimized for low-voltage industrial SoC interconnects with tight rail margins. |
| Standby Current | 2.0 µA typical / 8.0 µA max at 85 °C; meets ultra-low-power requirements for always-on monitoring nodes. |
| ECC Function | Hardware-based single-bit error correction per 16-bit word; no firmware intervention required for fault containment. |
| Data Retention | 1.0 V minimum retention voltage; sustains memory state during deep sleep or supply sag without refresh. |
| Operating Temperature | –40 °C to +85 °C industrial grade; qualified for under-hood automotive ECUs and railway signaling hardware. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; A18 is MSB, no A19 in VFBGA config. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel I/O; split into upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes controlled by BHE/ BLE. |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted for device selection; enables hierarchical memory decoding. |
| WE, OE, BHE, BLE | Control Inputs | WE enables write, OE enables read output, BHE/ BLE gate upper/lower byte writes-no shared function. |
| VCC, VSS | Power Terminals | Two VCC pins (balls D1, H1) and two VSS pins (balls D2, G2) provide low-impedance supply routing for noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC | Real-time single-bit error detection and correction per 16-bit word-eliminates need for external ECC logic or software overhead. |
| Byte Power Down | Automatic transition to standby when BHE and BLE are both inactive, enabling granular power control without CE manipulation. |
| Ultra-Low ISB2 | 2.0 µA typical standby current at 85 °C ensures <1 µW static power in always-on memory buffers for battery-backed systems. |
| TTL-Compatible I/O | Input thresholds (VIH = 1.4 V min, VIL = 0.4 V max) and output drive (VOL = 0.2 V @ 0.1 mA) match legacy 1.8 V logic families. |
| Industrial Temp Range | –40 °C to +85 °C operation validated across full voltage range (1.65–2.2 V), supporting deployment in uncontrolled environments. |
Applications
| Avionics Flight Control Memory | Railway Signaling Data Buffer |
|---|---|
|
Use Scenario: Storing real-time sensor fusion outputs and actuator command history in fly-by-wire flight computers. IC Role / Device Role / Timing Role: Primary volatile memory buffer with ECC-protected storage for critical telemetry and control logs. Use Value: Prevents single-event upsets (SEUs) from corrupting flight-critical data-meets DO-254 DAL-A traceability requirements. |
Use Scenario: Holding interlocking logic state tables and train position history in ERTMS Level 2 balise communication units. IC Role / Device Role / Timing Role: High-reliability SRAM for deterministic read/write latency in SIL-4 safety subsystems. Use Value: 55 ns access time ensures sub-millisecond response to trackside signal changes; ECC guarantees data integrity over 20+ year deployments. |
| Medical Imaging Frame Store | Industrial PLC Configuration Cache |
|
Use Scenario: Temporary storage of raw X-ray detector frames prior to FPGA-based compression in portable radiography units. IC Role / Device Role / Timing Role: Low-power, high-bandwidth frame buffer interfacing directly with image sensor controllers. Use Value: 1.65–2.2 V operation aligns with medical-grade low-noise power rails; 2.0 µA standby minimizes thermal load near sensitive analog front-ends. |
Use Scenario: Caching ladder logic runtime variables and I/O mapping tables in modular programmable logic controllers. IC Role / Device Role / Timing Role: Non-refreshed, fast-access memory for deterministic scan-cycle execution in real-time control loops. Use Value: Dual CE architecture allows seamless integration into multi-master backplane designs; byte enable supports partial register updates without full-word writes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV51216BLL-10MLI | No embedded ECC; requires external Hamming code implementation; 10 ns faster (10 ns vs 55 ns), but higher 3.3 V supply only. | Suitable for non-safety-critical consumer devices where speed > reliability; lacks industrial temp support (–40 °C to +85 °C). | Select only if system-level ECC is already implemented and 3.3 V rail is available; not drop-in compatible due to voltage and ECC architecture mismatch. |
| AS6C8016-55TIN | 55 ns access, 1.8 V nominal, no ECC; 48-pin TSOP I package; higher 30 µA standby current (vs 2.0 µA typical). | Used in cost-sensitive industrial HMIs where ECC is omitted and board space permits larger TSOP package. | Choose when ECC is unnecessary and PCB layout constraints favor TSOP over VFBGA; verify thermal performance given 3× higher standby power. |
Compared with IS61WV51216BLL-10MLI and AS6C8016-55TIN, CY62157G18-55BVXI uniquely integrates hardware ECC with ultra-low 2.0 µA standby in a compact VFBGA48, making it the sole option meeting both functional safety and energy-constrained industrial requirements.
Availability
CY62157G18-55BVXI is available at Aetrix Electronics and suitable for avionics flight control memory, railway signaling data buffers, and medical imaging frame stores requiring stable component supply across extended product lifecycles.
Supply support for CY62157G18-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for industrial, automotive, and IoT markets.
CY62157G18-55BVXI belongs to the MoBL® (Mobile Bit-Low-power) SRAM product line, designed specifically for high-reliability, low-voltage embedded systems demanding ECC protection and nanowatt-scale standby power.
FAQ
Does CY62157G18-55BVXI support 1M × 8-bit configuration?
No. The CY62157G18-55BVXI is factory-configured exclusively as 512K × 16-bit in its 48-ball VFBGA package. The 1M × 8-bit mode is only supported in the 48-pin TSOP I variant (e.g., CY62157G18-55ZSXI), which uses pin 45 as A19 and repurposes BHE/ BLE pins-this functionality is physically unavailable in the VFBGA48 footprint.
What is the role of the ERR pin on CY62157G18-55BVXI?
The CY62157G18-55BVXI does not include an ERR pin. That signal is present only on the CY62157GE variant (e.g., CY62157GE18-55BVXI), where it asserts LOW when an uncorrectable multi-bit error is detected. The 'G' suffix denotes the base ECC-capable version without error reporting output.
Can CE1 and CE2 be tied together for simplified control?
No. CE1 is active-low and CE2 is active-high; tying them together violates the required dual-enable logic (CE1 = LOW AND CE2 = HIGH). Doing so prevents device selection. For single-enable operation, external logic must generate complementary CE signals or use a dedicated decoder IC aligned with the datasheet truth table.
Is the 1.0 V data retention specification tested or guaranteed?
Yes. The 1.0 V data retention voltage is a guaranteed parameter specified in the DC Electrical Characteristics table (page 8 of datasheet 002-27323 Rev. *C) under "Data Retention Characteristics," with test conditions defined for VCC = 1.0 V, TA = 25 °C, and tRET ≥ 24 hours-verified per JEDEC JESD22-A107.
CY62157G18-55BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157G18-55BVXI FAQ
1.How can I place an order for CY62157G18-55BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157G18-55BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157G18-55BVXI reliable?
The price and inventory of CY62157G18-55BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G18-55BVXI is usually 5 days.
3.What payment methods are accepted for CY62157G18-55BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G18-55BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157G18-55BVXI?
CY62157G18-55BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157G18-55BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157G18-55BVXI?
For technical support, including CY62157G18-55BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G18-55BVXI requirements.
6.How does Aetrix verify that CY62157G18-55BVXI is sourced from the original manufacturer or authorized distributors?
All CY62157G18-55BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G18-55BVXI meets industry standards.
7.What is the process for return or replacement of CY62157G18-55BVXI?
All CY62157G18-55BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G18-55BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157G18-55BVXI part is unused and in its original packaging.
Return procedure for CY62157G18-55BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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