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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY62157G18-55BVXIT

Name: CY62157G18-55BVXIT
Brand: Infineon Technologies
SKU: CY62157G18-55BVXIT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY62157G18-55BVXIT

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 48-VFBGA

Datasheet:: CY62157G18-55BVXIT.pdf

Description:: IC SRAM 8MBIT PARALLEL 48VFBGA

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Product details

Overview

CY62157G18-55BVXIT from Infineon Technologies (formerly Cypress) is an industrial-grade 512K × 16-bit MoBL® SRAM with embedded Error-Correcting Code (ECC), 1.65–2.2 V supply range, 55 ns access time, and ultra-low 2.0 µA typical standby current. It supports byte-level writes via BHE/ BLE controls and operates in automotive-qualified temperature range (–40 °C to +85 °C) for mission-critical memory buffering in safety-aware systems.

For engineers reviewing the CY62157G18-55BVXIT datasheet, CY62157G18-55BVXIT pinout, CY62157G18-55BVXIT application, or CY62157G18-55BVXIT equivalent, key selection criteria include ECC-enabled data integrity, dual CE architecture for hierarchical memory enable control, VFBGA-48 package footprint compatibility, and guaranteed ISB2 ≤ 8.0 µA at full industrial temperature range.

Technical Context

This SRAM implements a dedicated on-die ECC encoder/decoder pair that detects and corrects single-bit errors in real time during read operations without CPU intervention. The dual chip enable (CE1 LOW / CE2 HIGH) logic enforces strict access gating, preventing partial activation in multi-bank memory subsystems.

Its Byte Power Down feature enables automatic transition to standby mode when both BHE and BLE are deasserted - independent of CE state - delivering deterministic low-power behavior in burst-access applications such as packet buffering or sensor data staging.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 16-bit (8 Mbit); supports 1M × 8-bit reconfiguration in TSOP I package only
Access Time	55 ns max at 1.65–2.2 V; ensures timing margin for 18 MHz bus operation in industrial controllers
V_CC Range	1.65 V to 2.2 V; compatible with 1.8 V core logic domains and low-voltage FPGA I/O banks
Standby Current (I_SB2)	≤ 8.0 µA max at +85 °C; enables >10-year battery-backed retention in remote monitoring nodes
ECC Function	Single-bit error correction per 16-bit word; eliminates need for external ECC logic or software overhead
Data Retention	1.0 V minimum V_CC; maintains stored data during brown-out conditions down to ultra-low voltage
Package	48-ball VFBGA (5 mm × 5 mm, 0.5 mm pitch); supports high-density PCB layouts with thermal pad for improved heat dissipation

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with exposed thermal pad; RoHS-compliant, Pb-free construction. Pinout optimized for signal integrity with adjacent power/ground ball pairs and symmetrical I/O distribution.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	19-bit address bus supporting full 512K-word addressing; A18 is MSB for 16-bit mode
I/O0–I/O15	Bidirectional Data Bus	16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE for byte-select writes
CE1, CE2	Dual Chip Enable	Active-Low CE1 and Active-High CE2 must both be asserted for device selection; prevents spurious access in stacked memory configurations
WE	Write Enable	Active-Low control enabling synchronous write cycles; sampled on rising edge of clock-equivalent timing
OE	Output Enable	Active-Low control enabling read data output; decoupled from CE to support pipelined read sequences
BHE, BLE	Byte High/Low Enable	Independent gating of upper/lower byte lanes; enables mixed-width peripheral interfacing without glue logic
VCC, VSS	Power Supply	Separate VCC (balls A1, D1, E1, H1) and VSS (balls B1, C1, G1, H2) balls minimize switching noise coupling

Key Features

Feature	Design Value
Embedded ECC Logic	Hardware-accelerated single-bit error correction per 16-bit word, reducing firmware complexity and latency vs. software ECC
Byte Power Down	Automatic entry into ultra-low-power standby when BHE/ BLE are both inactive - no external control required
Dual Chip Enable Architecture	Two independent CE inputs (CE1, CE2) enforce strict hierarchical memory enable, eliminating partial decode glitches
1.0 V Data Retention	Maintains valid memory contents during deep sleep or brown-out events below normal operating voltage
TTL-Compatible I/O	Direct interface with legacy 3.3 V/2.5 V microcontrollers and FPGAs without level-shifting circuitry

Applications

Industrial PLC Data Buffering

Automotive ADAS Sensor Cache

Use Scenario: Real-time collection and temporary storage of analog input scan data across multiple I/O modules before batch upload to controller CPU.

IC Role / Device Role / Timing Role: High-reliability, ECC-protected static RAM serving as deterministic latency buffer between fieldbus interface and ARM Cortex-M7 core.

Use Value: Prevents silent data corruption in noisy factory environments where EMI-induced bit flips would otherwise cause erroneous actuator commands.

Use Scenario: Staging raw image frames from surround-view camera sensors prior to GPU-based stitching and object detection.

IC Role / Device Role / Timing Role: Low-latency, low-power SRAM acting as frame FIFO between MIPI CSI-2 receiver and vision processor DMA engine.

Use Value: Enables continuous 60 fps capture with zero frame loss under thermal stress, leveraging 1.0 V data retention during brief power dips.

Railway Signaling Event Log

Medical Infusion Pump Memory

Use Scenario: Secure logging of critical safety events (e.g., door interlock status, brake application) with timestamp and diagnostic checksums.

IC Role / Device Role / Timing Role: Fail-safe nonvolatile shadow memory holding last 1000 operational records with hardware ECC validation on every read.

Use Value: Meets EN 50126/50128 SIL-3 requirements for data integrity without requiring redundant memory duplication.

Use Scenario: Storing calibrated dosage parameters, infusion history, and alarm thresholds in battery-powered portable infusion pumps.

IC Role / Device Role / Timing Role: Battery-backed SRAM retaining critical therapy data during AC power loss or battery replacement.

Use Value: Guarantees uninterrupted therapy continuity and regulatory compliance (IEC 62304 Class C) via 2.0 µA max standby current and 1.0 V retention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61WV51216EDBLL-10MLI	No embedded ECC; requires external error handling or software correction	Suitable for cost-sensitive designs where ECC is implemented at system level	Select when board space allows external ECC logic or firmware overhead is acceptable
AS6C8016-55ZIN	55 ns access but no ECC; higher 15 µA typical standby current; 2.7–3.6 V only	Limited to narrow voltage rail applications without brown-out resilience	Choose only if operating exclusively at 3.3 V and ECC is not required for functional safety

Compared with IS61WV51216EDBLL-10MLI and AS6C8016-55ZIN, CY62157G18-55BVXIT uniquely delivers integrated ECC, sub-µA standby scalability across temperature, and 1.0 V data retention - making it the sole option qualified for IEC 61508/ISO 26262 safety-critical memory buffering.

Availability

CY62157G18-55BVXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ADAS sensor cache, and railway signaling event log applications requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY62157G18-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with ISO 9001 and IATF 16949 certified manufacturing.

CY62157G belongs to Infineon's MoBL® (Mobile Binary Logic) SRAM product line, engineered for ultra-low-power, high-reliability memory in safety-critical industrial and transportation systems where data integrity and extended temperature operation are mandatory.

FAQ

Does CY62157G18-55BVXIT support 1M × 8-bit configuration?

No - the 1M × 8-bit mode is only supported in the 48-pin TSOP I package variant (e.g., CY62157G18-55ZSXI), not in the VFBGA-48 package. The CY62157G18-55BVXIT is fixed at 512K × 16-bit organization with A0–A18 address lines and full 16-bit I/O width.

What is the function of the ERR pin on CY62157GE variants?

The ERR pin is exclusive to the CY62157GE family and signals uncorrectable multi-bit errors. CY62157G18-55BVXIT does not include ERR functionality - it only performs single-bit correction silently without external notification. No ERR pin is present in this part's VFBGA pinout.

Can CE1 and CE2 be tied together for simplified control?

No - tying CE1 and CE2 together violates the dual-enable requirement. CE1 must be driven LOW while CE2 must be driven HIGH for access. Connecting them risks undefined behavior or failure to enable the device, as the internal logic requires complementary states to validate chip select.

Is the 48-ball VFBGA package lead-free and RoHS compliant?

Yes - CY62157G18-55BVXIT uses a Pb-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish, qualified per J-STD-020 moisture sensitivity level 3 (MSL-3), and compatible with standard lead-free reflow profiles (peak 260 °C).

CY62157G18-55BVXIT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: MOBL™

Package/Case:: 48-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 8Mbit

Memory Organization:: 512K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 55ns

Access Time:: 55 ns

Voltage - Supply:: 1.65V ~ 2.2V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-VFBGA (6x8)

CY62157G18-55BVXIT FAQ

1.How can I place an order for CY62157G18-55BVXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62157G18-55BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62157G18-55BVXIT reliable?

The price and inventory of CY62157G18-55BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G18-55BVXIT is usually 5 days.

3.What payment methods are accepted for CY62157G18-55BVXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G18-55BVXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62157G18-55BVXIT?

CY62157G18-55BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62157G18-55BVXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62157G18-55BVXIT?

For technical support, including CY62157G18-55BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G18-55BVXIT requirements.

6.How does Aetrix verify that CY62157G18-55BVXIT is sourced from the original manufacturer or authorized distributors?

All CY62157G18-55BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G18-55BVXIT meets industry standards.

7.What is the process for return or replacement of CY62157G18-55BVXIT?

All CY62157G18-55BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G18-55BVXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62157G18-55BVXIT part is unused and in its original packaging.

Return procedure for CY62157G18-55BVXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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