Infineon Technologies CY62157G30-45BVXA

Overview

CY62157G30-45BVXA from Infineon Technologies (formerly Cypress) is an automotive-grade 8-Mbit (512K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), dual chip-enable interface, and Byte Power Down mode. It operates at 45 ns access time across 2.2 V–3.6 V supply, delivers ≤6.5 µA max standby current, and is qualified to AEC-Q100 Grade A (–40 °C to +85 °C) for use in engine control units and ADAS memory buffers.

For engineers reviewing the CY62157G30-45BVXA datasheet, CY62157G30-45BVXA pinout, CY62157G30-45BVXA application, or CY62157G30-45BVXA equivalent, key selection criteria include ECC-enabled data integrity, ultra-low ISB2 standby current (1.4 µA typ), dual CE timing compatibility, and VFBGA-48 package suitability for space-constrained automotive PCB layouts.

Technical Context

The CY62157G30 implements a synchronous SRAM architecture with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on every read cycle without external intervention. Its dual chip-enable (CE1/CE2) requires CE1 = LOW and CE2 = HIGH for device selection, enabling hierarchical memory mapping in multi-SRAM systems.

Byte-level control is enforced via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) inputs, supporting true 8-bit or 16-bit data transfers. The "Byte Power Down" feature activates automatic standby when both BHE and BLE are deasserted - independent of CE state - reducing power during partial-byte idle periods in real-time control firmware.

Key Specifications

Pinout & Package

The CY62157G30-45BVXA is packaged in a Pb-free 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) with 0.5 mm pitch and 6.0 mm × 8.0 mm body size. This package supports automated optical inspection (AOI) and provides thermal performance suitable for convection-cooled automotive modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM-with-ECC applications.

Compared with IS62WV51216EBLL-45NLI and N25S80A16T100I, CY62157G30-45BVXA uniquely delivers deterministic single-bit error correction within the same 45 ns timing envelope and automotive temperature range - eliminating external ECC logic while maintaining full pin compatibility with standard 16-bit SRAM interfaces.

Availability

CY62157G30-45BVXA is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and telematics control units requiring stable component supply across long automotive production lifecycles (15+ years).

Supply support for CY62157G30-45BVXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions for safety-critical systems.

CY62157G belongs to Infineon's MoBL® (Memory with Built-in Logic) SRAM product line, engineered specifically for automotive and industrial applications demanding ECC reliability, ultra-low standby power, and AEC-Q100 qualification.

FAQ

Does CY62157G30-45BVXA support automatic error correction during read operations?

Yes. The device performs real-time single-bit error correction on every read cycle using on-die Hamming-code logic. Correction occurs transparently without CPU intervention, and no write-back is performed - the corrected data appears on I/O lines while the original memory word remains unchanged unless explicitly rewritten.

What is the function of the BYTE pin in the 48-pin TSOP I variant, and does it apply to CY62157G30-45BVXA?

The BYTE pin is specific to the 48-pin TSOP I package (not present in VFBGA-48) and configures the device as either 512K × 16 (BYTE = VCC) or 1M × 8 (BYTE = VSS). CY62157G30-45BVXA uses the VFBGA-48 package and has no BYTE pin; its I/O width is fixed at 16 bits.

Can CY62157G30-45BVXA operate reliably at 1.8 V?

No. The "G30" suffix denotes the 2.2 V–3.6 V VCC range. For 1.65 V–2.2 V operation, the CY62157G18 variant (55 ns speed grade) must be used. Attempting 1.8 V operation on CY62157G30-45BVXA violates datasheet specifications and may cause timing violations or data retention failure.

How does the Byte Power Down mode interact with chip enable signals?

Byte Power Down activates independently of CE1/CE2 status: when both BHE and BLE are deasserted, the device enters ISB2 standby (≤6.5 µA) even if CE1 is LOW and CE2 is HIGH. This allows fine-grained power gating during partial-byte idle periods without requiring reconfiguration of chip-select hierarchy.