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Infineon Technologies CY62157G30-45BVXAT
- Part No.:
- CY62157G30-45BVXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157G30-45BVXAT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,887
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Product details
Overview
CY62157G30-45BVXAT from Infineon Technologies (formerly Cypress) is an AEC-Q100 qualified automotive-grade 8-Mbit (512K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time over 2.2 V–3.6 V supply, featuring ultra-low standby current (1.4 µA typ), dual chip-enable architecture, and Byte Power Down mode.
For engineers reviewing the CY62157G30-45BVXAT datasheet, CY62157G30-45BVXAT pinout, CY62157G30-45BVXAT application, or CY62157G30-45BVXAT equivalent, key selection considerations include ECC-enabled data integrity in safety-critical automotive memory subsystems, 48-ball VFBGA package compatibility with high-density PCB layouts, and voltage-flexible operation across 2.2–3.6 V domains.
Technical Context
The CY62157G30 implements a dual-chip-enable interface (CE1 LOW + CE2 HIGH for access), byte-select control via BHE/ BLE to enable independent upper/lower 8-bit writes, and automatic transition to standby when both byte enables are deasserted - independent of CE state. Its ECC logic performs real-time single-bit correction without write-back support.
It integrates row/column decoders, sense amplifiers, and dedicated ECC encoder/decoder blocks adjacent to the 512K × 16 memory array. The device supports TTL-compatible I/O levels and maintains 1.5-V data retention during power loss, with full operation across –40 °C to +85 °C (Automotive-A grade).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K words × 16-bit); supports 16-bit parallel data bus interface |
| Access Time | 45 ns max at VCC = 2.2–3.6 V; enables timing closure in 22 MHz synchronous systems |
| Supply Voltage Range | 2.2 V to 3.6 V; compatible with 3.3-V automotive power domains |
| Standby Current (ISB2) | 1.4 µA typical / 6.5 µA max; enables ultra-low-power sleep modes in always-on ECUs |
| ECC Capability | Single-bit error correction (SER FIT < 0.1 FIT/Mb); detects and corrects bit flips without software intervention |
| Operating Temperature | –40 °C to +85 °C (Automotive-A grade); qualified per AEC-Q100 Rev G |
| Package | 48-ball VFBGA (5 mm × 5 mm, 0.5 mm pitch); optimized for thermal performance and board space efficiency |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 5 mm × 5 mm, 0.5 mm ball pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting 512K-word addressing (A0–A18 used; A19 reserved in 16-bit mode) |
| I/O0–I/O15 | Bidirectional Data Lines | 16-bit parallel data path; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE |
| CE1, CE2 | Chip Enable Inputs | Dual-enable logic requires CE1 = LOW and CE2 = HIGH for device selection |
| WE | Write Enable | Active-LOW signal initiating write cycle; latches data on rising edge of WE |
| OE | Output Enable | Active-LOW signal enabling read data output onto I/O lines |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write control; simultaneous deassertion triggers Byte Power Down mode |
| VCC, VSS | Power Supply Pins | Two VCC balls (pins A16, D1) and two VSS balls (pins E1, H1) for low-noise power distribution |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q100 Qualified | Validated for Automotive-A temperature range (–40 °C to +85 °C) and stress testing per Rev G |
| Embedded ECC | Hardware-based single-bit error correction with <0.1 FIT/Mb SER rate; no firmware overhead |
| Byte Power Down | Automatic entry into ultra-low-power standby (1.4 µA) when BHE and BLE are both deasserted |
| Wide Voltage Operation | Supports 2.2–3.6 V supply; eliminates need for external level shifters in mixed-voltage systems |
| TTL-Compatible I/O | Direct interfacing with legacy microcontrollers and FPGAs without voltage translation |
Applications
| Advanced Driver Assistance Systems (ADAS) | Automotive Instrument Clusters |
|---|---|
Use Scenario: Real-time image buffering and sensor fusion preprocessing in radar/vision ECUs requiring fault-tolerant memory. IC Role / Device Role / Timing Role: ECC-protected SRAM storing intermediate frame buffers and calibration data with deterministic 45 ns read latency. Use Value: Prevents silent data corruption in safety-critical perception pipelines; reduces system-level FIT by correcting single-bit upsets before they propagate. | Use Scenario: Storing graphical assets, gauge state variables, and CAN message queues in digital instrument panels. IC Role / Device Role / Timing Role: Low-power, high-reliability working memory for MCU-driven GUI rendering engines operating continuously at ambient temperatures up to +85 °C. Use Value: Enables always-on display functionality with sub-µA standby current during vehicle sleep mode, extending battery reserve time. |
| Engine Control Units (ECU) | Body Control Modules (BCM) |
Use Scenario: Holding real-time engine parameter logs, lookup tables, and diagnostic snapshots in ISO 26262-compliant powertrain controllers. IC Role / Device Role / Timing Role: Non-volatile-retentive SRAM (1.5 V hold) preserving critical runtime data during ignition cycling and brown-out events. Use Value: Eliminates need for external backup capacitors or EEPROM wear leveling; ensures deterministic data recovery after power restoration. | Use Scenario: Managing multi-zone lighting control states, door lock actuation history, and LIN bus message buffers in distributed body electronics. IC Role / Device Role / Timing Role: Dual-chip-enable SRAM enabling selective memory partitioning between main BCM processor and secondary safety monitor. Use Value: Supports ASIL-B partitioning via hardware-isolated memory regions; simplifies functional safety certification evidence. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-45NLI | No embedded ECC; 45 ns access, 2.5–3.6 V supply, 12 µA ISB max | Lacks hardware error correction; requires software ECC or external error detection | Select when cost sensitivity outweighs functional safety requirements and ECC is implemented at system level |
| Renesas R1EX24064BGSF#U0 | 64 Kbit serial EEPROM (I²C), not parallel SRAM; 1.7–5.5 V, 5 ms write time | Non-volatile but orders-of-magnitude slower; unsuitable for high-speed buffer use | Only viable for non-real-time configuration storage where write endurance and retention >10 years are primary needs |
Compared with IS62WV51216BLL-45NLI and R1EX24064BGSF#U0, CY62157G30-45BVXAT uniquely delivers hardware ECC, 45 ns parallel access, and sub-µA standby in a single AEC-Q100-qualified package - making it the only option for ASIL-B memory subsystems requiring zero-latency correction and deterministic timing.
Availability
CY62157G30-45BVXAT is available at Aetrix Electronics and suitable for advanced driver assistance systems (ADAS), automotive instrument clusters, and engine control units (ECU) requiring stable component supply, long-term lifecycle support, and AEC-Q100 compliance.
Supply support for CY62157G30-45BVXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and security solutions with broad industrial and automotive design-in presence.
CY62157G belongs to Infineon's MoBL® (Mobile Low-Power) SRAM product line, engineered specifically for automotive and industrial applications demanding high reliability, ultra-low power consumption, and embedded error resilience in harsh environments.
FAQ
Does CY62157G30-45BVXAT support automatic error correction during read operations?
Yes. The device performs real-time single-bit error correction on every read access using on-die ECC logic. Detected errors are corrected before data is driven onto the I/O bus, with no CPU intervention required. It does not support automatic write-back on error detection, meaning corrected data remains in memory only until the next write cycle.
What is the function of the dual chip-enable (CE1/CE2) interface?
The dual chip-enable interface requires CE1 = LOW and CE2 = HIGH simultaneously to select the device. This architecture allows hierarchical memory mapping - for example, CE1 can be driven by a higher-order address decoder while CE2 serves as a global enable, enabling clean partitioning of memory space in multi-master automotive systems.
Can CY62157G30-45BVXAT operate at 1.8 V?
No. The CY62157G30 variant is specified only for 2.2 V to 3.6 V operation. For 1.65–2.2 V operation, the CY62157G18 variant (55 ns speed grade) must be used. Attempting 1.8 V operation on the G30 version violates datasheet limits and may result in timing violations or data retention failure.
How does the Byte Power Down feature reduce system power consumption?
When both BHE and BLE are deasserted (HIGH), the device automatically enters standby mode with ISB2 ≤ 6.5 µA - regardless of CE1/CE2 state. This enables fine-grained power gating of memory banks during idle cycles in multi-threaded automotive MCUs, reducing average system power without requiring changes to chip-select timing or external control logic.
CY62157G30-45BVXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157G30-45BVXAT FAQ
1.How can I place an order for CY62157G30-45BVXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157G30-45BVXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157G30-45BVXAT reliable?
The price and inventory of CY62157G30-45BVXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G30-45BVXAT is usually 5 days.
3.What payment methods are accepted for CY62157G30-45BVXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G30-45BVXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157G30-45BVXAT?
CY62157G30-45BVXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157G30-45BVXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157G30-45BVXAT?
For technical support, including CY62157G30-45BVXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G30-45BVXAT requirements.
6.How does Aetrix verify that CY62157G30-45BVXAT is sourced from the original manufacturer or authorized distributors?
All CY62157G30-45BVXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G30-45BVXAT meets industry standards.
7.What is the process for return or replacement of CY62157G30-45BVXAT?
All CY62157G30-45BVXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G30-45BVXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157G30-45BVXAT part is unused and in its original packaging.
Return procedure for CY62157G30-45BVXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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