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Infineon Technologies CY62157G30-45BVXI
- Part No.:
- CY62157G30-45BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157G30-45BVXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:450
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Product details
Overview
CY62157G30-45BVXI from Infineon Technologies (formerly Cypress) is an industrial-grade 8-Mbit MoBL® SRAM with embedded ECC, configured as 512K × 16-bit, operating at 45 ns access time over 2.2–3.6 V supply, featuring ultra-low 1.4 µA typical standby current and TTL-compatible I/Os. It serves in mission-critical memory buffering for industrial controllers where data integrity and low-power retention are essential.
For engineers reviewing the CY62157G30-45BVXI datasheet, CY62157G30-45BVXI pinout, CY62157G30-45BVXI application, or CY62157G30-45BVXI equivalent, key selection factors include ECC-enabled single-bit error correction, dual chip enable architecture (CE1/CE2), byte power-down capability, and Pb-free 48-ball VFBGA packaging with validated thermal resistance of 36.92 °C/W (junction-to-case).
Technical Context
This SRAM implements a dedicated ECC encoder/decoder block that detects and corrects single-bit errors in real time during read operations, with no software overhead. Its dual CE architecture requires CE1 = LOW and CE2 = HIGH for device selection, decoupling chip enable logic from standard single-CE designs.
The Byte Power Down feature activates automatically when both BHE and BLE are deasserted, forcing the device into ISB2 standby mode regardless of CE state-enabling fine-grained power gating in partial-access memory subsystems. Address range spans A0–A18 (512K locations), with I/O0–I/O15 supporting full 16-bit parallel transfers or independent byte writes via BHE/BLE control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16-bit organization), enabling compact high-bandwidth data buffers without external address multiplexing |
| Access Time | 45 ns maximum at VCC = 2.2–3.6 V, supporting real-time deterministic response in industrial PLCs and motion controllers |
| Supply Voltage | 2.2 V to 3.6 V operation, compatible with modern 3.3 V and mixed-voltage system rails |
| Standby Current | 1.4 µA typical / 6.5 µA maximum (ISB2), allowing >1-year battery-backed retention in edge sensor nodes |
| ECC Function | Hardware-based single-bit error detection and correction per 16-bit word, eliminating need for external error-handling firmware |
| Data Retention | 1.0 V minimum VCC for data retention, permitting graceful degradation during brown-out conditions |
| I/O Compatibility | TTL-compatible inputs and outputs, ensuring direct interfacing with legacy microcontrollers and FPGAs without level-shifting |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), Pb-free, 6 mm × 8 mm footprint, 0.5 mm ball pitch, thermal resistance ΘJC = 36.92 °C/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting 512K-word addressing; no A19 in default 512K×16 mode |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE for byte-select writes/reads |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted simultaneously for device selection-prevents accidental activation |
| WE | Write Enable | Active-Low signal initiating write cycle; latches data on rising edge of WE when CE and OE are valid |
| OE | Output Enable | Active-Low control for output buffer enable; high-impedance state when deasserted, isolating bus during idle cycles |
| BHE, BLE | Byte High/Low Enable | Independent gating of upper/lower bytes; simultaneous deassertion triggers automatic Byte Power Down mode |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply with two VCC and two VSS balls for low-noise power distribution and reduced IR drop |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | On-die Hamming-code encoder/decoder corrects single-bit errors transparently-no CPU intervention or latency penalty |
| Byte Power Down | Automatic transition to ISB2 standby when BHE and BLE are both inactive, reducing leakage without software coordination |
| Dual Chip Enable Architecture | CE1 (active-low) + CE2 (active-high) pairing eliminates false-enable risk in noisy industrial environments |
| 1.0 V Data Retention | Maintains stored data down to 1.0 V supply, enabling reliable operation during undervoltage events and battery fallback |
| Pb-Free VFBGA Packaging | 48-ball VFBGA meets RoHS and JEDEC MO-270 standards, with optimized thermal path for conduction-cooled industrial PCBs |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Imaging Cache |
|---|---|
|
Use Scenario: Storing real-time I/O scan data and program state in programmable logic controllers operating continuously in factory environments. IC Role / Device Role / Timing Role: Primary volatile memory buffer with ECC protection, interfacing directly to ARM Cortex-M7 MCU via 16-bit parallel bus at 45 ns timing. Use Value: Prevents silent data corruption in safety-critical control loops; 1.4 µA standby enables extended runtime during AC power loss. |
Use Scenario: Caching raw sensor frames from X-ray detector arrays before FPGA-based preprocessing in portable imaging systems. IC Role / Device Role / Timing Role: High-speed frame buffer SRAM with hardware ECC, synchronized to 22.22 MHz bus clock for burst transfers. Use Value: Ensures pixel integrity across thousands of consecutive frames; 1.0 V retention allows safe shutdown during battery swap without data loss. |
| Railway Signaling Controller | Avionics Data Logger |
|
Use Scenario: Holding configuration tables and event logs in EN 5012x-compliant signaling interlock units deployed in outdoor cabinets. IC Role / Device Role / Timing Role: Nonvolatile-equivalent working memory with automatic byte power-down during idle intervals between train detection cycles. Use Value: Meets -40°C to +85°C industrial temp grade; dual CE architecture prevents spurious writes during EMI transients on rail lines. |
Use Scenario: Capturing flight parameter telemetry streams (e.g., GPS, IMU, engine sensors) in DO-160 qualified airborne recorders. IC Role / Device Role / Timing Role: Buffered memory stage between ADC interface and flash storage, using BHE/BLE for selective byte writes to minimize power spikes. Use Value: 6.5 µA max ISB2 ensures <10 µW quiescent draw-critical for battery-limited emergency locator transmitters (ELTs). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM with ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV51216BLL-10MLI | No embedded ECC; requires external error handling; 10 ns faster (10 ns access), but higher 25 mA ICC and 20 µA ISB | Suitable only where ECC is implemented in host processor or FPGA logic-not for standalone reliability | Select only if speed outweighs data integrity requirements and host has ECC capability |
| ON Semiconductor NVSRAM N25S80-45G1F | Nonvolatile SRAM with integrated EEPROM backup; no ECC; 45 ns access; 10 µA ISB; requires external capacitor for store/restore | Used where power-loss persistence is mandatory, not just error correction-adds complexity and cost | Choose when data must survive complete power removal, not just bit-flip correction |
Compared with IS61WV51216BLL-10MLI and N25S80-45G1F, CY62157G30-45BVXI uniquely delivers hardware ECC with ultra-low standby current in a drop-in 48-ball VFBGA, eliminating external circuitry while meeting industrial temperature and reliability mandates.
Availability
CY62157G30-45BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic imaging caches, and railway signaling controllers requiring stable component supply across extended product lifecycles.
Supply support for CY62157G30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio for industrial and automotive applications.
CY62157G30-45BVXI belongs to the MoBL® (Mobile Bitline) SRAM family, designed specifically for low-power, ECC-protected memory in space-constrained industrial and medical electronics where data integrity cannot be compromised.
FAQ
Does CY62157G30-45BVXI support 1M × 8-bit configuration?
No-CY62157G30-45BVXI is fixed at 512K × 16-bit organization. The 48-pin TSOP I variant (not this VFBGA part) can be reconfigured to 1M × 8-bit by tying BYTE to VSS and using A19 on pin 45, but the -45BVXI suffix denotes the 48-ball VFBGA package with no BYTE pin or A19 support.
What is the function of the ERR pin, and is it present on CY62157G30-45BVXI?
The ERR pin is exclusive to the CY62157GE variant and signals uncorrectable multi-bit errors. CY62157G30-45BVXI is the G-series (not GE), so it lacks the ERR pin entirely-ECC correction occurs silently without external notification.
Can CE1 and CE2 be tied together for single-enable operation?
No-CE1 is active-low and CE2 is active-high; tying them together creates a logical conflict. The device requires CE1 = LOW and CE2 = HIGH simultaneously. External logic (e.g., inverter) is needed to generate CE2 from CE1 if simplifying control lines.
Is the 48-ball VFBGA pinout compatible with other Cypress SRAMs like CY62167G?
No-the CY62157G30-45BVXI uses a custom 48-ball VFBGA layout optimized for its 19-bit address + 16-bit data + dual CE + byte enable interface. CY62167G has different pin count, ball map, and signal assignments; mechanical or electrical substitution is not supported.
CY62157G30-45BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157G30-45BVXI FAQ
1.How can I place an order for CY62157G30-45BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157G30-45BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157G30-45BVXI reliable?
The price and inventory of CY62157G30-45BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G30-45BVXI is usually 5 days.
3.What payment methods are accepted for CY62157G30-45BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G30-45BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157G30-45BVXI?
CY62157G30-45BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157G30-45BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157G30-45BVXI?
For technical support, including CY62157G30-45BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G30-45BVXI requirements.
6.How does Aetrix verify that CY62157G30-45BVXI is sourced from the original manufacturer or authorized distributors?
All CY62157G30-45BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G30-45BVXI meets industry standards.
7.What is the process for return or replacement of CY62157G30-45BVXI?
All CY62157G30-45BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G30-45BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157G30-45BVXI part is unused and in its original packaging.
Return procedure for CY62157G30-45BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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