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Infineon Technologies CY62157G30-45BVXIT
- Part No.:
- CY62157G30-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157G30-45BVXIT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,350
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Product details
Overview
CY62157G30-45BVXIT from Infineon Technologies (formerly Cypress) is an industrial-grade 8-Mbit MoBL® SRAM with embedded Error-Correcting Code (ECC), organized as 512K × 16 bits, operating at 45 ns access time over 2.2–3.6 V supply, and featuring ultra-low 1.4 µA typical standby current. It serves as a fault-tolerant memory buffer in mission-critical embedded controllers requiring data integrity under radiation or voltage fluctuation.
For engineers reviewing the CY62157G30-45BVXIT datasheet, CY62157G30-45BVXIT pinout, CY62157G30-45BVXIT application, or CY62157G30-45BVXIT equivalent, key selection criteria include ECC-enabled single-bit error correction, dual chip enable logic (CE1/CE2), byte power-down capability, and Pb-free 48-ball VFBGA packaging for high-density PCB layouts.
Technical Context
This SRAM implements a synchronous CMOS architecture with dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors in real time during read operations. Its dual chip enable interface (CE1 LOW + CE2 HIGH) enables selective device activation in multi-SRAM systems without external gating logic.
The Byte Power Down feature activates automatically when both BHE and BLE are deasserted, forcing the device into ISB2 standby mode (<6.5 µA max) regardless of CE state-enabling fine-grained power control in battery-backed subsystems. Address range spans A0–A18 (512K), with I/O0–I/O15 supporting full 16-bit parallel access or independent byte writes via BHE/ BLE control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16-bit organization) - supports 16-bit data bus interfaces without glue logic |
| Access Time | 45 ns - ensures timing compliance with 22.22 MHz burst reads in industrial microcontroller buses |
| VCC Range | 2.2 V to 3.6 V - compatible with 3.3 V and mixed-voltage SoC domains including FPGA I/O banks |
| Standby Current | Max 6.5 µA at 85 °C - enables >10-year battery life in RTC-backed memory retention applications |
| ECC Function | Single-bit error correction per 16-bit word - eliminates need for external EDAC logic in safety-critical firmware storage |
| Data Retention | 1.0 V minimum - maintains stored contents during brown-out events down to ultra-low VCC |
| Package | 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) - supports automated SMT assembly and thermal performance ΘJA = 36.92 °C/W |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), Pb-free, moisture sensitivity level 3 (MSL3), 6 mm × 8 mm footprint, 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting 512K-word addressing; no internal latching - requires stable address during CE/OE assertion |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance state when CE deselected or OE/BHE/ BLE inactive |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 AND Active-High CE2 required for access - prevents partial selection in daisy-chained memory arrays |
| WE | Write Enable | Low-active control; write cycle initiated only when WE, CE1, CE2, and OE are all valid |
| OE | Output Enable | Separate read strobe - allows read-modify-write sequences without bus contention |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write masking; enables byte-level updates without disturbing adjacent data |
| VCC, VSS | Power Supply | Dual VCC pins (balls A1, D1) and dual VSS pins (balls C2, E2) reduce IR drop and improve noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | On-die Hamming-code encoder/decoder corrects single-bit errors on every read - eliminates external EDAC IC and associated latency |
| Byte Power Down | Automatic transition to <6.5 µA standby when BHE/ BLE both inactive - enables dynamic power gating per memory region |
| TTL-Compatible I/O | VIH/VIL thresholds meet 3.3 V TTL levels (e.g., VIH ≥ 2.0 V @ VCC = 3.6 V) - interoperable with legacy microcontrollers without level shifters |
| 1.0 V Data Retention | Valid data hold at VCC ≥ 1.0 V - sustains memory state during controlled power-down sequences in energy-harvesting systems |
| Pb-Free VFBGA Packaging | RoHS-compliant 48-ball VFBGA with 0.8 mm pitch - supports high I/O density and thermal dissipation (ΘJA = 36.92 °C/W) |
Applications
| Industrial PLC Data Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Storing real-time I/O scan data and configuration registers in programmable logic controllers operating in harsh factory environments with EMI and voltage transients. IC Role / Device Role / Timing Role: Fault-tolerant SRAM buffer interfacing directly to ARM Cortex-M7 MCU's 16-bit external memory bus with 45 ns timing margin. Use Value: Embedded ECC prevents silent data corruption in control logic, while 1.4 µA standby current extends backup battery life beyond 5 years. | Use Scenario: Temporary frame buffering in portable ultrasound devices where image data must survive brief power interruptions during battery swaps. IC Role / Device Role / Timing Role: High-speed 16-bit memory bank synchronized to FPGA video processing pipeline, accessed at 22.22 MHz burst rate. Use Value: 1.0 V data retention ensures zero-frame-loss recovery after hot-swap events; VFBGA package enables compact, low-profile PCB layout. |
| Avionics Sensor Logger | Railway Signaling Controller |
Use Scenario: Logging inertial measurement unit (IMU) telemetry in unmanned aerial vehicles subject to temperature cycling (–40 °C to +85 °C) and ionizing radiation. IC Role / Device Role / Timing Role: Radiation-hardened-by-design SRAM storing timestamped sensor samples with on-the-fly ECC correction per 16-bit word. Use Value: Single-bit error correction mitigates soft errors induced by cosmic rays; industrial-grade temp range ensures reliability across flight envelopes. | Use Scenario: Storing interlocking logic state tables in fail-safe railway signaling cabinets where memory corruption could compromise safety integrity level (SIL-4). IC Role / Device Role / Timing Role: Safety-certified memory element interfaced to dual-lockstep microcontrollers, with ECC status monitored via external watchdog. Use Value: Hardware ECC eliminates need for software-based checksum polling, reducing CPU overhead and improving deterministic response time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV51216BLL-10MLI | No embedded ECC; requires external error detection logic; 10 ns faster (10 ns access), but higher 25 mA active current | Suitable for non-safety-critical high-speed buffers where ECC is implemented in firmware or FPGA fabric | Select when speed outweighs fault tolerance and system-level ECC is already architected |
| AS6C8016-45TIN | 45 ns access, no ECC, 3.3 V only, TSOP-II package; lower cost but lacks byte power-down and 1.0 V retention | Applicable in cost-sensitive industrial HMIs where data integrity is managed at application layer | Choose for legacy board refreshes requiring pin-compatible drop-in with minimal redesign |
Compared with IS61WV51216BLL-10MLI and AS6C8016-45TIN, CY62157G30-45BVXIT uniquely integrates hardware ECC, ultra-low standby current, and byte-level power gating-making it the only option for safety-critical, battery-constrained, or radiation-prone applications requiring zero-software-overhead data integrity.
Availability
CY62157G30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, and avionics sensor logging requiring stable component supply across extended product lifecycles.
Supply support for CY62157G30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with emphasis on reliability and industrial longevity.
CY62157G30-45BVXIT belongs to the MoBL® (Mobile Bit-Low-power) SRAM product line, designed specifically for battery-powered and thermally constrained embedded systems requiring ECC-protected memory with sub-microamp standby operation.
FAQ
Does CY62157G30-45BVXIT support 1M × 8-bit configuration?
No. The CY62157G30-45BVXIT variant is fixed at 512K × 16-bit organization. Only the 48-pin TSOP I package version (e.g., CY62157G30-45ZSXI) supports reconfiguration to 1M × 8-bit via BYTE pin strapping; the VFBGA package (BVXIT) does not expose the BYTE pin and lacks this mode.
What is the function of the ERR pin on CY62157GE variants?
The ERR pin is exclusive to CY62157GE (not G-series); it asserts LOW when an uncorrectable multi-bit error is detected during read. CY62157G30-45BVXIT has no ERR pin-it only corrects single-bit errors silently without flagging.
Can CE1 and CE2 be tied together for single-enable operation?
No. The dual CE architecture requires CE1 LOW and CE2 HIGH simultaneously. Tying them together violates the logic condition and renders the device non-functional. External logic (e.g., inverter) is required if only one enable signal is available.
Is the 48-ball VFBGA footprint compatible with standard reflow profiles?
Yes. The BVXIT package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak 260 °C, 60-second duration above 217 °C), provided board layout follows Infineon's recommended thermal pad and stencil design guidelines.
CY62157G30-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157G30-45BVXIT FAQ
1.How can I place an order for CY62157G30-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157G30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157G30-45BVXIT reliable?
The price and inventory of CY62157G30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G30-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62157G30-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G30-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157G30-45BVXIT?
CY62157G30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157G30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157G30-45BVXIT?
For technical support, including CY62157G30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G30-45BVXIT requirements.
6.How does Aetrix verify that CY62157G30-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62157G30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G30-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62157G30-45BVXIT?
All CY62157G30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G30-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157G30-45BVXIT part is unused and in its original packaging.
Return procedure for CY62157G30-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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