Infineon Technologies CY62157G30-45ZSXA

Overview

CY62157G30-45ZSXA from Infineon Technologies (formerly Cypress) is an automotive-grade 8-Mbit (512K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), dual chip-enable architecture, 45 ns access time, and AEC-Q100 qualification for use in engine control units, ADAS domain controllers, and safety-critical memory buffers.

For engineers reviewing the CY62157G30-45ZSXA datasheet, CY62157G30-45ZSXA pinout, CY62157G30-45ZSXA application, or CY62157G30-45ZSXA equivalent, key selection criteria include ECC support for ASIL-B systems, ultra-low 1.4 µA typical standby current at 3.0 V, 2.2–3.6 V operating voltage, byte-level write enable (BHE/ BLE), and Pb-free 48-ball VFBGA packaging.

Technical Context

The CY62157G30 implements a dual CE interface (CE1 LOW + CE2 HIGH) for hierarchical memory mapping and supports independent upper/lower byte writes via BHE and BLE signals. Its ECC logic operates inline during read cycles to detect and correct single-bit errors without CPU intervention.

It features Byte Power Down: when both BHE and BLE are deasserted, the device enters automatic standby mode regardless of CE state-enabling dynamic power gating in partial-access memory subsystems. Data retention is guaranteed down to 1.5 V across –40 °C to +85 °C.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant and Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Compared with IS62WV51216BLL-45NLI and AS6C8016-45TIN, CY62157G30-45ZSXA delivers hardware ECC, AEC-Q100 certification, and 1.5 V data retention-reducing system-level safety validation scope and enabling robust operation under automotive voltage transients.

Availability

CY62157G30-45ZSXA is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and V2X communication modules requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for CY62157G30-45ZSXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and security solutions-with over 50 years of automotive qualification expertise.

CY62157G belongs to Infineon's MoBL® (Mobile Low-Power) SRAM product line, engineered specifically for automotive and industrial applications demanding ultra-low standby power, ECC resilience, and extended temperature operation without performance compromise.

FAQ

Does CY62157G30-45ZSXA support automatic error correction during read operations?

Yes. The device performs single-bit error correction inline during every read cycle using dedicated ECC encoder/decoder circuitry. It detects and corrects errors transparently without CPU intervention or additional latency-though it does not support automatic write-back on error detection per datasheet note 2.

What is the function of the BYTE pin in the 48-pin TSOP I package?

The BYTE pin is specific to the 48-pin TSOP I variant (not present in the VFBGA package of CY62157G30-45ZSXA). When tied to VCC, it configures the device as a 512K × 16 SRAM; when tied to VSS, it enables 1M × 8 mode with A19 on pin 45. This pin is not applicable to the ZSXA (VFBGA) variant.

Can CY62157G30-45ZSXA operate at 1.8 V?

No. The CY62157G30 variant is specified for 2.2 V to 3.6 V operation only. For 1.65–2.2 V operation, the CY62157G18 variant (55 ns speed grade) must be used. Mixing voltage ranges risks violating DC electrical characteristics and invalidates AEC-Q100 qualification.

How does the Byte Power Down feature reduce system power consumption?

When both BHE and BLE are deasserted, the device automatically enters standby mode-even if CE1/CE2 remain asserted-cutting ICC to ≤6.5 µA. This enables partial-memory gating in systems where only selected byte lanes are active, eliminating software-controlled power-state transitions and reducing wake-up latency.