My Inquiry
My Account
Infineon Technologies CY62157G30-45ZSXA
- Part No.:
- CY62157G30-45ZSXA
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62157G30-45ZSXA.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,741
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62157G30-45ZSXA from Infineon Technologies (formerly Cypress) is an automotive-grade 8-Mbit (512K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), dual chip-enable architecture, 45 ns access time, and AEC-Q100 qualification for use in engine control units, ADAS domain controllers, and safety-critical memory buffers.
For engineers reviewing the CY62157G30-45ZSXA datasheet, CY62157G30-45ZSXA pinout, CY62157G30-45ZSXA application, or CY62157G30-45ZSXA equivalent, key selection criteria include ECC support for ASIL-B systems, ultra-low 1.4 µA typical standby current at 3.0 V, 2.2–3.6 V operating voltage, byte-level write enable (BHE/ BLE), and Pb-free 48-ball VFBGA packaging.
Technical Context
The CY62157G30 implements a dual CE interface (CE1 LOW + CE2 HIGH) for hierarchical memory mapping and supports independent upper/lower byte writes via BHE and BLE signals. Its ECC logic operates inline during read cycles to detect and correct single-bit errors without CPU intervention.
It features Byte Power Down: when both BHE and BLE are deasserted, the device enters automatic standby mode regardless of CE state-enabling dynamic power gating in partial-access memory subsystems. Data retention is guaranteed down to 1.5 V across –40 °C to +85 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K words × 16-bit); supports full-word parallel access for microcontroller bus interfacing |
| Access Time | 45 ns at 2.2–3.6 V; enables real-time data buffering in 20 MHz+ MCU systems |
| ECC Function | Single-bit error correction per 16-bit word; SER FIT rate <0.1 FIT/Mb per AN88889 |
| Standby Current | 1.4 µA typical / 6.5 µA max at 3.0 V; meets automotive low-power sleep-mode requirements |
| Operating Voltage | 2.2 V to 3.6 V; compatible with 3.3 V I/O domains and brown-out tolerant designs |
| Temperature Range | –40 °C to +85 °C (Automotive-A grade); qualified per AEC-Q100 Rev G |
| Data Retention | 1.5 V minimum; allows safe hold mode during battery voltage sag in vehicle stop-start cycles |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant and Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 512K-word addressing; A18 used for bank selection in extended configurations |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; TTL-compatible I/O levels allow direct connection to legacy MCU buses |
| CE1 / CE2 | Dual Chip Enable | Active-LOW CE1 and active-HIGH CE2 require simultaneous assertion for device selection-enables hierarchical memory decoding |
| WE | Write Enable | Active-LOW signal controlling write cycle initiation; synchronous with address and data setup/hold timing |
| OE | Output Enable | Active-LOW control for output buffer enable; allows read data to be gated independently of chip select |
| BHE / BLE | Byte High/Low Enable | Independent controls for upper (I/O8–I/O15) and lower (I/O0–I/O7) byte writes-critical for mixed-endian or partial-word updates |
| VCC / VSS | Power / Ground | Dual VCC pins (balls A16, D1) and multiple VSS balls (B1, C1, E1, F1, G1, H1) minimize IR drop and improve noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC | Hardware-accelerated single-bit error correction per 16-bit word-no firmware overhead or latency penalty on reads |
| Byte Power Down | Automatic transition to standby when BHE and BLE are both inactive-enables fine-grained power control without software coordination |
| Dual Chip-Enable Interface | CE1/CE2 pairing allows integration into multi-chip memory maps with priority-based decoding and reduced address decoder complexity |
| AEC-Q100 Automotive Qualification | Qualified for Automotive-A temperature range (–40 °C to +85 °C) with full reliability testing-suitable for ASIL-B functional safety applications |
| 1.5-V Data Retention | Maintains stored data during brown-out events down to 1.5 V supply-supports fail-safe shutdown sequences in automotive ECUs |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
Use Scenario: Real-time sensor fusion buffer storing radar pre-processing results and CAN message queues during transient voltage conditions. IC Role / Device Role / Timing Role: High-reliability SRAM with ECC acting as fault-tolerant working memory for safety-critical compute pipelines. Use Value: Prevents silent data corruption in time-sensitive control loops; 1.5 V retention ensures data integrity during engine cranking voltage dips. | Use Scenario: Camera image preprocessing pipeline requiring burst-mode frame buffering with deterministic 45 ns read latency. IC Role / Device Role / Timing Role: Low-latency, byte-selectable memory for pixel data staging between ISP and SoC DMA engines. Use Value: BHE/ BLE enables selective update of YUV channel buffers without full-word writes-reducing bus contention and power. |
| Infotainment Head Unit | Vehicle-to-Everything (V2X) Communication Module |
Use Scenario: Audio codec parameter storage and UI state caching with concurrent access from ARM Cortex-A and DSP cores. IC Role / Device Role / Timing Role: Shared memory resource with dual CE interface enabling independent arbitration by two bus masters. Use Value: Dual CE simplifies inter-processor communication protocol; 3.3 V compatibility avoids level-shifter components. | Use Scenario: Secure boot configuration storage and cryptographic key scratchpad in DSRC/WAVE protocol stacks. IC Role / Device Role / Timing Role: ECC-protected memory for integrity-critical runtime variables and firmware signature verification buffers. Use Value: Hardware ECC eliminates need for software checksum overhead-preserving CPU cycles for real-time packet processing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV51216BLL-45NLI | No embedded ECC; 45 ns access; 2.5–3.6 V operation; -40°C to +85°C | Requires external error detection logic; higher system-level validation burden for ASIL-B compliance | Select when ECC is handled at software layer or system-level redundancy is already implemented |
| AS6C8016-45TIN | 45 ns; 2.7–3.6 V; no ECC; industrial temp only (–40°C to +85°C not AEC-Q100 qualified) | Lacks automotive qualification and ECC-unsuitable for safety-critical domains without additional qualification effort | Consider only for non-safety infotainment subsystems where cost sensitivity outweighs qualification requirements |
Compared with IS62WV51216BLL-45NLI and AS6C8016-45TIN, CY62157G30-45ZSXA delivers hardware ECC, AEC-Q100 certification, and 1.5 V data retention-reducing system-level safety validation scope and enabling robust operation under automotive voltage transients.
Availability
CY62157G30-45ZSXA is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and V2X communication modules requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.
Supply support for CY62157G30-45ZSXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and security solutions-with over 50 years of automotive qualification expertise.
CY62157G belongs to Infineon's MoBL® (Mobile Low-Power) SRAM product line, engineered specifically for automotive and industrial applications demanding ultra-low standby power, ECC resilience, and extended temperature operation without performance compromise.
FAQ
Does CY62157G30-45ZSXA support automatic error correction during read operations?
Yes. The device performs single-bit error correction inline during every read cycle using dedicated ECC encoder/decoder circuitry. It detects and corrects errors transparently without CPU intervention or additional latency-though it does not support automatic write-back on error detection per datasheet note 2.
What is the function of the BYTE pin in the 48-pin TSOP I package?
The BYTE pin is specific to the 48-pin TSOP I variant (not present in the VFBGA package of CY62157G30-45ZSXA). When tied to VCC, it configures the device as a 512K × 16 SRAM; when tied to VSS, it enables 1M × 8 mode with A19 on pin 45. This pin is not applicable to the ZSXA (VFBGA) variant.
Can CY62157G30-45ZSXA operate at 1.8 V?
No. The CY62157G30 variant is specified for 2.2 V to 3.6 V operation only. For 1.65–2.2 V operation, the CY62157G18 variant (55 ns speed grade) must be used. Mixing voltage ranges risks violating DC electrical characteristics and invalidates AEC-Q100 qualification.
How does the Byte Power Down feature reduce system power consumption?
When both BHE and BLE are deasserted, the device automatically enters standby mode-even if CE1/CE2 remain asserted-cutting ICC to ≤6.5 µA. This enables partial-memory gating in systems where only selected byte lanes are active, eliminating software-controlled power-state transitions and reducing wake-up latency.
CY62157G30-45ZSXA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62157G30-45ZSXA FAQ
1.How can I place an order for CY62157G30-45ZSXA through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157G30-45ZSXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157G30-45ZSXA reliable?
The price and inventory of CY62157G30-45ZSXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G30-45ZSXA is usually 5 days.
3.What payment methods are accepted for CY62157G30-45ZSXA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G30-45ZSXA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157G30-45ZSXA?
CY62157G30-45ZSXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157G30-45ZSXA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157G30-45ZSXA?
For technical support, including CY62157G30-45ZSXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G30-45ZSXA requirements.
6.How does Aetrix verify that CY62157G30-45ZSXA is sourced from the original manufacturer or authorized distributors?
All CY62157G30-45ZSXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G30-45ZSXA meets industry standards.
7.What is the process for return or replacement of CY62157G30-45ZSXA?
All CY62157G30-45ZSXA units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G30-45ZSXA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157G30-45ZSXA part is unused and in its original packaging.
Return procedure for CY62157G30-45ZSXA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62157G30-45ZSXA Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
