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Infineon Technologies CY62157G30-45ZSXI
- Part No.:
- CY62157G30-45ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62157G30-45ZSXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:116
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Product details
Overview
CY62157G30-45ZSXI from Infineon Technologies (formerly Cypress) is an industrial-grade 8-Mbit MoBL® SRAM with embedded Error-Correcting Code (ECC), configured as 512K × 16-bit, operating at 45 ns access time over 2.2–3.6 V supply, and featuring ultra-low 1.4 µA typical standby current. It serves as fault-tolerant data buffer in mission-critical embedded controllers requiring single-bit error correction.
For engineers reviewing the CY62157G30-45ZSXI datasheet, CY62157G30-45ZSXI pinout, CY62157G30-45ZSXI application, or CY62157G30-45ZSXI equivalent, key selection criteria include ECC-enabled reliability, dual CE architecture for hierarchical memory control, byte-selectable power-down behavior, and compatibility with 48-ball VFBGA footprint in space-constrained industrial designs.
Technical Context
This SRAM implements a dedicated on-die ECC encoder/decoder pair that detects and corrects single-bit errors in real time during read operations without CPU intervention. Its dual chip enable (CE1 LOW / CE2 HIGH) logic enables selective bank activation in multi-device memory subsystems.
The Byte Power Down feature activates automatically when both BHE and BLE are deasserted, forcing the device into ISB2 standby mode regardless of CE state-enabling dynamic per-byte power gating in burst-access applications. Address range spans A0–A18 (512K locations), with I/O0–I/O15 supporting full 16-bit parallel data transfer.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 16-bit (8 Mbit total); supports deterministic addressing without address multiplexing |
| Access Time | 45 ns maximum at VCC = 2.2–3.6 V; ensures timing compliance in 22.22 MHz bus systems |
| Supply Voltage Range | 2.2 V to 3.6 V; compatible with 3.3 V and mixed-voltage industrial backplanes |
| Standby Current | 1.4 µA typical / 6.5 µA max at 85 °C; enables >10-year battery-backed retention in low-power nodes |
| ECC Function | On-the-fly single-bit error detection and correction per 16-bit word; eliminates soft-error-induced crashes |
| Data Retention | 1.0 V minimum VCC; maintains stored data during brown-out conditions down to critical rail collapse |
| I/O Interface | TTL-compatible inputs/outputs; interfaces directly with legacy microcontrollers without level-shifting |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word decoding; no multiplexing required |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; BHE/ BLE enable independent upper/lower byte writes/reads |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted for device selection; enables hierarchical memory mapping |
| WE | Write Enable | Low-active control for synchronous write cycles; latches data on rising edge of WE |
| OE | Output Enable | Controls three-state output drivers; high-Z when deasserted to prevent bus contention |
| BHE, BLE | Byte High/Low Enable | Independent gating of I/O8–I/O15 (BHE) and I/O0–I/O7 (BLE); enables 8-bit sub-word access |
| VCC, VSS | Power Supply | Separate VCC (pins 2, 32) and VSS (pins 13, 26) pairs minimize switching noise and ground bounce |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | Corrects single-bit errors in real time without software overhead or memory bandwidth penalty |
| Byte Power Down | Automatic transition to 1.4 µA standby when BHE/ BLE both inactive-enables fine-grained power control |
| Dual Chip Enable Architecture | Supports multi-SRAM systems with independent chip select hierarchy and reduced address decode complexity |
| 1.0 V Data Retention | Maintains valid memory contents during deep sleep or power-fail scenarios below operational voltage |
| Pb-Free VFBGA Packaging | 48-ball footprint optimized for automated SMT assembly and thermal performance (ΘJA = 36.92 °C/W) |
Applications
| Industrial PLC Memory Buffer | Railway Signaling Controller Cache |
|---|---|
|
Use Scenario: Real-time I/O status buffering in programmable logic controllers under EMI-heavy factory environments. IC Role / Device Role / Timing Role: ECC-protected SRAM storing sensor input snapshots and actuator command queues with deterministic 45 ns read latency. Use Value: Prevents undetected memory corruption from cosmic rays or switching transients-ensuring SIL-2 functional safety compliance. |
Use Scenario: Storing interlocking logic tables and train position history in wayside signaling units with extended temperature operation. IC Role / Device Role / Timing Role: Low-power, high-reliability scratchpad memory accessed by safety-certified microcontrollers during fail-safe transitions. Use Value: 1.4 µA standby current extends backup battery life beyond 10 years while ECC guarantees data integrity across -40 °C to +85 °C. |
| Medical Diagnostic Imaging FIFO | Avionics Flight Data Recorder Buffer |
|
Use Scenario: Temporary storage of ultrasound echo samples between ADC capture and DSP processing in portable imaging devices. IC Role / Device Role / Timing Role: High-speed 16-bit parallel buffer enabling burst-mode acquisition at 22.22 MHz without pipeline stalls. Use Value: TTL-compatible I/O eliminates level shifters; 45 ns access time matches FPGA-based DMA controller timing budgets. |
Use Scenario: Cyclic buffering of flight parameter telemetry in crash-survivable recorders subjected to shock, vibration, and thermal cycling. IC Role / Device Role / Timing Role: Radiation-tolerant SRAM with ECC used for volatile pre-crash data staging before nonvolatile write-through. Use Value: 1.0 V data retention preserves last 30 seconds of flight data even during complete power loss and capacitor discharge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV51216EDBLL-10MLI | No embedded ECC; requires external error-handling logic or software correction | Suitable only where system-level ECC is already implemented in host processor or FPGA | Select only if cost sensitivity outweighs reliability requirements and host can manage error correction |
| AS6C8016-55ZIN | 55 ns access time; higher 2.5 µA typical standby current; no ECC support | Limited to non-safety-critical applications where soft errors are acceptable | Choose when 45 ns timing is not required and ECC is unnecessary for target use case |
Compared with IS61WV51216EDBLL-10MLI and AS6C8016-55ZIN, CY62157G30-45ZSXI uniquely delivers integrated ECC, 45 ns speed, and sub-2 µA standby in a single VFBGA package-making it the only drop-in solution for industrial safety-critical memory buffers requiring zero software ECC overhead.
Availability
CY62157G30-45ZSXI is available at Aetrix Electronics and suitable for industrial PLCs, railway signaling controllers, and medical diagnostic imaging systems requiring stable component supply across extended product lifecycles.
Supply support for CY62157G30-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and reliable memory solutions for industrial and safety-critical applications.
CY62157G30-45ZSXI belongs to the MoBL® (Mobile Binary Logic) SRAM product line, designed specifically for ultra-low-power, high-reliability embedded systems where ECC protection and extended temperature operation are mandatory.
FAQ
Does CY62157G30-45ZSXI support 1M × 8-bit configuration?
No. The CY62157G30-45ZSXI variant is fixed at 512K × 16-bit organization. While the pin-compatible CY62157G30-45ZSXI's TSOP I package sibling supports 1M × 8-bit via BYTE pin strapping, this VFBGA version lacks the BYTE pin and is factory-configured exclusively for 512K × 16-bit operation per its ordering code and datasheet specification.
What is the function of the ERR pin on CY62157GE variants, and is it present on CY62157G30-45ZSXI?
The ERR pin is exclusive to the CY62157GE family and signals uncorrectable multi-bit errors. CY62157G30-45ZSXI belongs to the CY62157G series, which omits the ERR pin entirely-its ECC logic operates silently, correcting single-bit errors without external notification or interrupt generation.
Can CE1 and CE2 be tied together for simplified control?
No. CE1 is active-low and CE2 is active-high; tying them together violates the required dual-enable logic (CE1 = LOW AND CE2 = HIGH). Doing so prevents device selection. For single-enable operation, external logic must generate complementary CE1/CE2 signals or use a different SRAM family with unified CE.
Is the 48-ball VFBGA footprint compatible with standard reflow profiles for lead-free assembly?
Yes. The CY62157G30-45ZSXI uses a standard Pb-free VFBGA package qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260 °C, fully compliant with industry-standard lead-free soldering processes.
CY62157G30-45ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62157G30-45ZSXI FAQ
1.How can I place an order for CY62157G30-45ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157G30-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157G30-45ZSXI reliable?
The price and inventory of CY62157G30-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G30-45ZSXI is usually 5 days.
3.What payment methods are accepted for CY62157G30-45ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G30-45ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157G30-45ZSXI?
CY62157G30-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157G30-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157G30-45ZSXI?
For technical support, including CY62157G30-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G30-45ZSXI requirements.
6.How does Aetrix verify that CY62157G30-45ZSXI is sourced from the original manufacturer or authorized distributors?
All CY62157G30-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G30-45ZSXI meets industry standards.
7.What is the process for return or replacement of CY62157G30-45ZSXI?
All CY62157G30-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G30-45ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157G30-45ZSXI part is unused and in its original packaging.
Return procedure for CY62157G30-45ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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